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    • 5. 发明授权
    • Nonvolatile metal oxide memory element and nonvolatile memory device
    • 非挥发性金属氧化物存储元件和非易失性存储器件
    • US08450715B2
    • 2013-05-28
    • US12884000
    • 2010-09-16
    • Kensuke TakanoKatsuyuki SekineYoshio OzawaRyota FujitsukaMitsuru Sato
    • Kensuke TakanoKatsuyuki SekineYoshio OzawaRyota FujitsukaMitsuru Sato
    • H01L45/00
    • H01L45/08G11C13/0007G11C2213/32G11C2213/71G11C2213/72H01L27/2409H01L27/2481H01L45/1233H01L45/146H01L45/1616H01L45/1625H01L45/165H01L45/1675
    • According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.
    • 根据一个实施例,非易失性存储器件包括多个非易失性存储元件,每个非易失性存储元件包括电阻变化膜。 电阻变化膜能够响应于施加到电阻变化膜的电压或通过电阻变化膜的电流中的至少一个而在具有不同电阻的多个状态之间进行转换来记录信息,并且电阻变化膜包括 包含选自Hf,Zr,Ni,Ta,W,Co,Al,Fe,Mn,Cr和Nb中的至少一种元素的氧化物。 包含在电阻变化膜中的杂质元素是选自Mg,Ca,Sr,Ba,Sc,Y,La,V,Ta,B,Ga,In,Tl,C,Si中的至少一种元素, Ge,Sn,Pb,N,P,As,Sb,Bi,S,Se和Te,并且杂质元素的氧化物形成的标准吉布斯能量的绝对值大于氧化物形成的标准吉布斯能量的绝对值 的氧化物中所含的元素。
    • 6. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08253189B2
    • 2012-08-28
    • US12510577
    • 2009-07-28
    • Katsuyuki SekineAkiko SekiharaKensuke TakanoYoshio Ozawa
    • Katsuyuki SekineAkiko SekiharaKensuke TakanoYoshio Ozawa
    • H01L29/66
    • H01L29/792H01L27/11565H01L27/11578H01L27/11582H01L29/513H01L29/66833H01L29/7926
    • A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
    • 半导体器件包括半导体区域,形成在半导体区域的表面上的隧道绝缘膜,形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜,形成在表面上的块状绝缘膜 以及形成在所述块绝缘膜的表面上的控制栅电极,其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜,第二绝缘膜 形成在第一绝缘膜的表面上的膜,以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜,并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。
    • 8. 发明授权
    • Semiconductor memory device and method of manufacturing the same
    • 半导体存储器件及其制造方法
    • US08530876B2
    • 2013-09-10
    • US12885038
    • 2010-09-17
    • Kensuke TakanoKatsuyuki SekineYoshio Ozawa
    • Kensuke TakanoKatsuyuki SekineYoshio Ozawa
    • H01L21/00
    • H01L45/1233H01L27/2409H01L27/2481H01L45/08H01L45/146H01L45/1633H01L45/1675
    • According to one embodiment, a semiconductor memory device comprises a substrate, a lower electrode, a variable resistance film, and an upper electrode. The lower electrode is on the substrate. The variable resistance film is on the lower electrode and stores data. The upper electrode is on the variable resistance film. The variable resistance film comprises a first film, and a second film. The first film is on a side of at least one of the upper electrode and the lower electrode and contains a metal. The second film is between the first film and the other electrode and contains the metal and oxygen. A composition ratio [O]/[Me] of oxygen to the metal in the second film is lower than a stoichiometric ratio and higher than the composition ratio [O]/[Me] in the first film. The composition ratio [0]/[Me] changes between the first film and the second film.
    • 根据一个实施例,半导体存储器件包括衬底,下电极,可变电阻膜和上电极。 下电极位于基板上。 可变电阻膜位于下电极上并存储数据。 上电极位于可变电阻膜上。 可变电阻膜包括第一膜和第二膜。 第一膜位于上电极和下电极中的至少一个的一侧并且包含金属。 第二膜位于第一膜和另一电极之间,并含有金属和氧。 第二膜中氧与金属的组成比[O] / [Me]低于化学计量比,高于第一膜中的组成比[O] / [Me]。 组成比[0] / [Me]在第一膜和第二膜之间变化。