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1. 发明授权

US07811839B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07811839B2
公开(公告)日：2010-10-12
申请号：US11883805
申请日：2006-02-16
申请人： Kenji Kasahara , Kazumasa Ueda
发明人： Kenji Kasahara , Kazumasa Ueda
IPC分类号： H01L21/00 , H01L29/18
CPC分类号： H01L21/30621 , H01L33/08
摘要： The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 μm and a bottom base diameter of from 0.05 to 2.0 μm; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 μm and a base diameter of from 0.05 to 2.0 μm. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μm and a surface density of 2×106 to 2×1010 cm−2, and (c) dry-etching the semiconductor layer to form convex portions in the shape selected from a cone and a truncated corn.
摘要翻译：本发明提供一种半导体发光器件及其制造方法。半导体器件包括（i）具有选自锥体和截头圆锥形状的凸部的半导体层和（ii）电极，其中在具有截头圆锥形状的凸部的情况下，凸部具有高度为0.05〜5.0μm，底底直径为0.05〜2.0μm; 在具有锥形形状的凸部的情况下，凸部的高度为0.05〜5.0μm，基径为0.05〜2.0μm。一种制造半导体发光器件的方法，包括以下步骤：（a）在衬底上生长半导体层，（b）在半导体层上形成具有平均粒径为0.01至10μm的颗粒的区域和表面密度为2×10 6〜2×10 10 cm -2，（c）对半导体层进行干法蚀刻，形成选自圆锥体和截玉米的形状的凸部。

2. 发明授权

US07645625B2 Method for fine processing of substrate, method for fabrication of substrate, and light emitting device 有权
标题翻译：基板的精细加工方法，基板的制造方法以及发光装置
公开(公告)号：US07645625B2
公开(公告)日：2010-01-12
申请号：US12294963
申请日：2007-03-30
申请人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
发明人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
IPC分类号： H01L21/00
CPC分类号： H01L21/30608 , H01L21/308 , H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083 , Y10S977/856
摘要： The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.
摘要翻译：本发明提供了一种基板的精细加工方法，基板的制造方法以及发光装置。在基板精细加工方法中，在从具有单一颗粒层的基板除去单个颗粒层之后，具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心已经放置的单个颗粒层通过蚀刻形成。

3. 发明申请

US20090236629A1 Sustrate and Semiconductor Light-Emitting Device 审中-公开
标题翻译：基板和半导体发光器件
公开(公告)号：US20090236629A1
公开(公告)日：2009-09-24
申请号：US11922497
申请日：2006-07-05
申请人： Naohiro Nishikawa , Kazumasa Ueda , Kenji Kasahara , Yoshihiko Tsuchida
发明人： Naohiro Nishikawa , Kazumasa Ueda , Kenji Kasahara , Yoshihiko Tsuchida
IPC分类号： H01L33/00 , H01L21/308 , H01L29/06
CPC分类号： H01L21/3065 , H01L33/007 , H01L33/22
摘要： The present invention provides a substrate and a semiconductor light emitting device. Convexes having a curved surface are formed on the substrate. The semiconductor light emitting device comprises a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.
摘要翻译：本发明提供了一种基板和半导体发光器件。在基板上形成具有曲面的凸部。半导体发光器件包括其上形成有弯曲表面的凸起的衬底和在衬底上的半导体层。

4. 发明申请

US20090093122A1 Method For Producing Group III-V Nitride Semiconductor Substrate 审中-公开
标题翻译：生产III-V族氮化物半导体衬底的方法
公开(公告)号：US20090093122A1
公开(公告)日：2009-04-09
申请号：US12224984
申请日：2007-03-08
申请人： Kazumasa Ueda , Naohiro Nishikawa , Kenji Kasahara
发明人： Kazumasa Ueda , Naohiro Nishikawa , Kenji Kasahara
IPC分类号： H01L21/32
CPC分类号： H01L33/12 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0079 , H01S5/0213 , H01S5/32341 , H01S2304/12
摘要： The present invention provides a method for producing a group III-V nitride semiconductor substrate. The method for producing a group III-V nitride semiconductor substrate comprises the steps of (I-1) to (I-6): (I-1) placing inorganic particles on a template, (I-2) dry-etching the template by using the inorganic particles as an etching mask, to form convexes on the template, (I-3) forming a coating film for an epitaxial growth mask on the template, (I-4) removing the inorganic particles to form an exposed surface of the template, (I-5) growing a group III-V nitride semiconductor on the exposed surface of the template, and (I-6) separating the group III-V nitride semiconductor from the template.
摘要翻译：本发明提供一种III-V族氮化物半导体衬底的制造方法。制备III-V族氮化物半导体衬底的方法包括以下步骤：（I-1）至（I-6）：（I-1）将无机颗粒置于模板上，（I-2）干蚀刻模板通过使用无机颗粒作为蚀刻掩模，在模板上形成凸起（I-3），在模板上形成外延生长掩模用涂膜（I-4），除去无机颗粒，形成曝光表面模板（I-5）在模板的暴露表面上生长III-V族氮化物半导体，以及（I-6）将III-V族氮化物半导体与模板分离。

5. 发明申请

US20080149952A1 Semiconductor Light Emitting Device and Method For Manufacturing the Same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080149952A1
公开(公告)日：2008-06-26
申请号：US11883805
申请日：2006-02-16
申请人： Kenji Kasahara , Kazumasa Ueda
发明人： Kenji Kasahara , Kazumasa Ueda
IPC分类号： H01L33/00
CPC分类号： H01L21/30621 , H01L33/08
摘要： The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 μm and a bottom base diameter of from 0.05 to 2.0 μm; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 μm and a base diameter of from 0.05 to 2.0 μm. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μm and a surface density of 2×106 to 29×1010 cm−2, and (c) dry-etching the semiconductor layer to form convex portions in the shape selected from a cone and a truncated corn.
摘要翻译：本发明提供一种半导体发光器件及其制造方法。半导体器件包括（i）具有选自锥体和截头圆锥形状的凸部的半导体层和（ii）电极，其中在具有截头圆锥形状的凸部的情况下，凸部具有高度为0.05-5.0μm，底部底部直径为0.05-2.0μm; 在具有锥形形状的凸部的情况下，凸部的高度为0.05〜5.0μm，基径为0.05〜2.0μm。一种制造半导体发光器件的方法，包括以下步骤：（a）在衬底上生长半导体层，（b）在半导体层上形成具有平均粒径为0.01至10μm的颗粒的区域和表面密度的2×10 6至29×10 10 cm -2，和（c）干蚀刻半导体层以形成凸起部分，其形状选自锥体和截顶玉米。

6. 发明授权

US08097891B2 Group III nitride semiconductor light emitting device and method for producing the same 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US08097891B2
公开(公告)日：2012-01-17
申请号：US12223986
申请日：2007-02-13
申请人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
发明人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L33/32 , H01L33/42
摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

7. 发明申请

US20100155754A1 Group III Nitride Semiconductor Light Emitting Device and Method for Producing the Same 有权
标题翻译：第III族氮化物半导体发光装置及其制造方法
公开(公告)号：US20100155754A1
公开(公告)日：2010-06-24
申请号：US12223986
申请日：2007-02-13
申请人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
发明人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
IPC分类号： H01L33/58 , H01L21/30
CPC分类号： H01L33/025 , H01L33/22 , H01L33/32 , H01L33/42
摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

8. 发明申请

US20090114944A1 Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device 有权
标题翻译：基板精加工方法，基板加工方法及发光装置
公开(公告)号：US20090114944A1
公开(公告)日：2009-05-07
申请号：US12294963
申请日：2007-03-30
申请人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
发明人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
IPC分类号： H01L33/00 , B44C1/22 , H01L21/306
CPC分类号： H01L21/30608 , H01L21/308 , H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083 , Y10S977/856
摘要： The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.
摘要翻译：本发明提供了一种基板的精细加工方法，基板的制造方法以及发光装置。在基板精细加工方法中，在从具有单一颗粒层的基板除去单个颗粒层之后，具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心已经放置的单个颗粒层通过蚀刻形成。本发明的制造方法包括以下步骤（I）至（V）：（I）通过将颗粒布置在基材上形成单个颗粒层; （II）通过蚀刻所获得的基板来减小每个颗粒的直径; （III）在所得基板上形成由掩模材料构成的薄膜; （IV）从基板上除去粒子，形成具有与粒子的存在直径相当的粒径的孔的掩模，以及（V）通过使用掩模蚀刻基板，在掩模的孔下面的基板上形成具有与掩模的孔的内径相当的直径的孔。发光器件由氮化物半导体制成，并且在光提取表面和/或相对表面的整个表面或部分区域上形成有细孔。

9. 发明申请

US20070215905A1 Compound Semiconductor Epitaxial Substrate and Process for Producing the Same 失效
标题翻译：复合半导体外延基板及其制造方法
公开(公告)号：US20070215905A1
公开(公告)日：2007-09-20
申请号：US11597613
申请日：2005-05-26
申请人： Kenji Kohiro , Tomoyuki Takada , Kazumasa Ueda , Masahiko Hata
发明人： Kenji Kohiro , Tomoyuki Takada , Kazumasa Ueda , Masahiko Hata
IPC分类号： H01L21/20
CPC分类号： H01L29/7785 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262
摘要： A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b). Lm Ls>Lc (2a)
摘要翻译：提供了一种化合物半导体外延基板及其制造方法。化合物半导体外延基板包括单晶衬底，晶格失配化合物半导体层和应力补偿层，其中晶格失配化合物半导体层和应力补偿层设置在单晶衬底的相同表面侧上，存在在晶格失配化合物半导体层以及应力补偿层中不发生晶格弛豫，表示单晶衬底的晶格常数的Ls表示晶格失配化合物半导体层的晶格常数，Lm表示应力补偿层的晶格常数满足公式（1a）或（1b）。 <？in-line-formula description =“In-line Formulas”end =“lead”？> Lm <？in-line-formula description =“In-line Formulas”end =“lead”？> Lm> Ls> Lc（2a）<？in-line-formula description =“In-line Formulas”end = 尾巴“？>

10. 发明授权

US08097887B2 Light emitting device having a monotone decreasing function 有权
标题翻译：具有单调递减功能的发光器件
公开(公告)号：US08097887B2
公开(公告)日：2012-01-17
申请号：US12225697
申请日：2007-03-27
申请人： Sadanori Yamanaka , Yoshinobu Ono , Kazumasa Ueda
发明人： Sadanori Yamanaka , Yoshinobu Ono , Kazumasa Ueda
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/22
CPC分类号： H01L33/22 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (θ, φ) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction φ and is substantially represented by I (θ, φ)=I (θ). I (θ, φ) represents a light intensity distribution in a direction (θ, φ), θ represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0≦θ≦90°), φ represents a rotation angle around the normal (0≦φ≦360°), and I (θ) represents a monotone decreasing function with which 0 is approached when θ=90° is satisfied. In the light emitting device, of a structural body constructing the chip of the light emitting device, with regard to a size of a portion of the structural body which is transparent to light emitted from a light emitting layer, a ratio (an aspect ratio) between the size in a lateral direction and the size in a thickness direction is not less than 5 and a structure having a light scattering function is provided on a surface of the light emitting device chip or in an interior of the transparent portion of the structural body.
摘要翻译：本发明提供一种发光装置。发光装置具有光分布，其中直接测量从发光器件的芯片发出的光所获得的光分布I（＆amp;θ; ph ph）不依赖于方向＆phgr; 并且基本上由I（＆Thetas;＆phgr;）= I（＆thetas;）表示。 I（＆thetas;＆phgr。）表示方向（＆thetas;＆phgr;），＆thetas的光强度分布; 表示从发光器件的法线方向到光提取表面的角度（0＆amp; nlE;＆hell;＆nlE; 90°），＆phgr; 表示正常（0＆nlE;＆phgr;＆nlE; 360°）周围的旋转角度，I（＆Thetas;）表示满足＆amp; t = 90°的单调递减函数，接近0。在构成发光装置的芯片的结构体的发光装置中，对于从发光层发出的光透明的结构体的一部分的尺寸，比率（纵横比）在横向尺寸和厚度方向之间的尺寸不小于5，并且在发光元件芯片的表面上或在结构体的透明部分的内部设置具有光散射功能的结构。

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