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    • 7. 发明授权
    • Liquid crystal display and a defect correcting method for the same
    • 液晶显示器及其缺陷校正方法
    • US08035768B2
    • 2011-10-11
    • US13018815
    • 2011-02-01
    • Tomoki NodaToshihide TsubataMasanori TakeuchiKenji Enda
    • Tomoki NodaToshihide TsubataMasanori TakeuchiKenji Enda
    • G02F1/1333
    • G02F1/1309G02F1/134309G02F1/1368G02F2001/136263G02F2201/508
    • A liquid crystal display uses a pixel division method by which the size of a defect can be reduced much more than conventionally possible, and a defect correcting method for the liquid crystal display. The liquid crystal display is provided with an active matrix array substrate including a plurality of gate lines and a plurality of source lines arranged on a transparent substrate so as to intersect with each other, and a plurality of pixel electrodes arranged in a matrix, each pixel electrode including an assembly of a plurality of sub-pixel electrodes, separate TFTs respectively connected to the sub-pixel electrodes in the vicinity of an intersection portion of the gate line and the source line, the TFTs being driven by the common gate line and the common source line, and at least one opening portion being formed in a lower-layer side line placed in a lower layer at the intersection portion.
    • 液晶显示器使用像现有技术那样可以减少缺陷尺寸的像素分割方法和用于液晶显示的缺陷校正方法。 该液晶显示装置具备有源矩阵阵列基板,该有源矩阵阵列基板包括多个栅极线和布置在透明基板上以彼此交叉的多个源极线以及以矩阵形式布置的多个像素电极,每个像素 包括多个子像素电极的组件的电极,分别连接到栅极线和源极线的交叉部分附近的子像素电极的TFT,由公共栅极线驱动的TFT和 公共源极线,并且至少一个开口部分形成在位于交叉部分处的下层中的下层侧线中。
    • 8. 发明申请
    • Active matrix substrate and display device
    • 有源矩阵基板和显示装置
    • US20050236615A1
    • 2005-10-27
    • US11114020
    • 2005-04-26
    • Ryoki ItohYuhko HashimotoKenji EndaMasanori Takeuchi
    • Ryoki ItohYuhko HashimotoKenji EndaMasanori Takeuchi
    • G02F1/1368H01L27/12H01L29/76H01L29/786
    • H01L29/78696H01L27/12H01L27/124H01L29/41733
    • An active matrix substrate of the present invention includes a TFT and a substrate. The TFT formed on a substrate includes, when viewed in a normal direction of the substrate: a first region in which a gate electrode overlaps a source electrode via a semiconductor layer; a second region in which the gate electrode overlaps a drain electrode via the semiconductor layer; and a third region in which the semiconductor layer overlaps neither the gate electrode, source electrode, nor the drain electrode. The third region includes a portion adjoining the source electrode lying outside the first region and/or a portion adjoining the drain electrode lying outside the second region. The gate electrode includes: a main body, which includes a portion constituting the first region and the second region; and a protrusion from the main body. At least a part of the protrusion of the gate electrode is in between the drain electrode and the portion of the third region adjoining the source electrode, or between the source electrode and the portion of the third region adjoining the drain electrode.
    • 本发明的有源矩阵基板包括TFT和基板。 形成在基板上的TFT包括:在基板的法线方向观察时:栅电极经由半导体层与源电极重叠的第一区域; 第二区域,其中栅电极经由半导体层与漏电极重叠; 以及第三区域,其中半导体层既不与栅电极,源电极也不与第二漏电极重叠。 第三区域包括邻近位于第一区域外部的源电极的部分和/或邻近位于第二区域外部的漏电极的部分。 栅电极包括:主体,其包括构成第一区域的部分和第二区域; 以及来自主体的突起。 栅电极的突起的至少一部分位于漏电极和与源电极相邻的第三区域的部分之间,或者源极电极与与漏电极相邻的第三区域的部分之间。