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1. 发明授权

US06452091B1 Method of producing thin-film single-crystal device, solar cell module and method of producing the same 失效
标题翻译：薄膜单晶器件的制造方法，太阳能电池模块及其制造方法
公开(公告)号：US06452091B1
公开(公告)日：2002-09-17
申请号：US09614548
申请日：2000-07-12
申请人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L2102
CPC分类号： H01L21/76259 , H01L21/304 , Y10T156/1002 , Y10T156/1028 , Y10T156/1041 , Y10T156/1048 , Y10T156/1049
摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.
摘要翻译：进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于剥离的单晶。该单晶体用于太阳能电池和图像显示元件的驱动电路部件。提供了当从基板剥离时防止单晶层的质量和产量降低的方法。制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

2. 发明授权

US07175706B2 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US07175706B2
公开(公告)日：2007-02-13
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C30B11/14
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

3. 发明申请

US20060194417A1 Polycrystalline sillicon substrate 审中-公开
标题翻译：多晶硅衬底
公开(公告)号：US20060194417A1
公开(公告)日：2006-08-31
申请号：US10530189
申请日：2003-10-10
申请人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
发明人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L31/0376 , H01L21/20
CPC分类号： C30B29/06 , C30B11/00 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.
摘要翻译：一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

4. 发明授权

US06682990B1 Separation method of semiconductor layer and production method of solar cell 失效
标题翻译：半导体层的分离方法和太阳能电池的制造方法
公开(公告)号：US06682990B1
公开(公告)日：2004-01-27
申请号：US09656014
申请日：2000-09-07
申请人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L2130
CPC分类号： H01L31/1804 , H01L21/67207 , H01L21/6835 , H01L21/76259 , H01L31/0504 , H01L31/1892 , H01L2221/68368 , Y02E10/547 , Y02P70/521 , Y10S438/96 , Y10S438/977
摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.
摘要翻译：根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。

5. 发明申请

US20050124139A1 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US20050124139A1
公开(公告)日：2005-06-09
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C01B33/02 , C30B11/00 , C30B29/06 , C30B33/00 , H01L21/208 , H01L31/18 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

6. 发明授权

US06211038B1 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06211038B1
公开(公告)日：2001-04-03
申请号：US09047325
申请日：1998-03-25
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.
摘要翻译：制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

7. 发明授权

US06258698B1 Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06258698B1
公开(公告)日：2001-07-10
申请号：US09046600
申请日：1998-03-24
申请人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2130
CPC分类号： H01L21/2007
摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.
摘要翻译：提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤，在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

8. 发明授权

US06258666B1 Method of producing semiconductor thin film and method of producing solar cell using same 失效
标题翻译：制造半导体薄膜的方法和使用其制造太阳能电池的方法
公开(公告)号：US06258666B1
公开(公告)日：2001-07-10
申请号：US09333019
申请日：1999-06-15
申请人： Masaki Mizutani , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Noritaka Ukiyo , Yukiko Iwasaki
发明人： Masaki Mizutani , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Noritaka Ukiyo , Yukiko Iwasaki
IPC分类号： H01L21336
CPC分类号： H01L21/76251 , C23C16/01 , C30B29/60 , C30B33/00 , H01L31/1892 , Y02E10/50 , Y10S156/93 , Y10S156/942 , Y10T156/1179 , Y10T156/1978
摘要： Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.
摘要翻译：提供一种制造半导体薄膜的方法，其中当形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上时，支撑构件旋转，从而将半导体薄膜剥离离开基质。还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。这些提供了将半导体薄膜远离基板剥离而不损坏的方法以及不污染保持基板的方法。

9. 发明授权

US06802900B2 Liquid phase growth methods and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06802900B2
公开(公告)日：2004-10-12
申请号：US10022545
申请日：2001-12-20
申请人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/02 , C30B19/04 , C30B19/06 , C30B19/08
摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.
摘要翻译：提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

10. 发明授权

US06429035B2 Method of growing silicon crystal in liquid phase and method of producing solar cell 失效
标题翻译：在液相中生长硅晶体的方法和生产太阳能电池的方法
公开(公告)号：US06429035B2
公开(公告)日：2002-08-06
申请号：US09198263
申请日：1998-11-24
申请人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
发明人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
IPC分类号： H01L2120
CPC分类号： H01L27/1296 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , H01L29/66765 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined concentration into indium melted in a carbon boat or a quartz crucible, supersaturating the melt, and submerging a substrate into the melt, thereby growing a silicon crystal containing a dopant element. This method can provide a method of growing a thin film of crystalline silicon having a high crystallinity and a dopant concentration favorably controlled, thereby serving for mass production of inexpensive solar cells which have high performance as well as image displays which have high contrast and are free from color ununiformity.
摘要翻译：在液相中生长单晶硅的方法包括通过将以预定浓度的含有硼，铝，磷或砷的硅的固体溶解在在碳舟或石英坩埚中熔化的铟中来制备熔体，使熔体过饱和，以及将衬底浸入熔体中，从而生长含有掺杂元素的硅晶体。该方法可以提供一种生长具有高结晶度和有利于控制的掺杂剂浓度的晶体硅薄膜的方法，从而用于批量生产具有高性能的廉价太阳能电池以及具有高对比度且无游离的图像显示器从颜色不均匀。

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