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1. 发明授权

US5057462A Compensation of lithographic and etch proximity effects 失效
标题翻译：屈光度和蚀刻近似效应的补偿
公开(公告)号：US5057462A
公开(公告)日：1991-10-15
申请号：US413356
申请日：1989-09-27
申请人： Juli H. Eisenberg , Larry B. Fritzinger , Chong-Cheng Fu , Taeho Kook , Thomas M. Wolf
发明人： Juli H. Eisenberg , Larry B. Fritzinger , Chong-Cheng Fu , Taeho Kook , Thomas M. Wolf
IPC分类号： G03F1/08 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065
CPC分类号： G03F7/20 , Y10S438/941 , Y10S438/948
摘要： In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern.

2. 发明授权

US5002898A Integrated-circuit device isolation 失效
标题翻译：集成电路器件隔离
公开(公告)号：US5002898A
公开(公告)日：1991-03-26
申请号：US423992
申请日：1989-10-19
申请人： Larry B. Fritzinger , Kuo-Hua Lee , Chih-Yuan Lu , Janmye Sung
发明人： Larry B. Fritzinger , Kuo-Hua Lee , Chih-Yuan Lu , Janmye Sung
IPC分类号： H01L21/76 , H01L21/316 , H01L21/32 , H01L21/762
CPC分类号： H01L21/32 , H01L21/76202
摘要： In the manufacture of integrated-circuit semiconductor devices, prior to formation of a field oxide, a mask structure is provided on a silicon device area, comprising a pad oxide layer, a polysilicon buffer layer, a protective oxide layer, and a silicon nitride mask layer. Inclusion of the protective layer between polysilicon and silicon nitride layers prevents pad oxide failure and attendant substrate etching during strip-etching of the structure overlying the pad oxide.

3. 发明授权

US06284598B1 Method of manufacturing a flash memory cell having inter-poly-dielectric isolation 有权
标题翻译：制造具有多晶硅绝缘隔离的闪存单元的方法
公开(公告)号：US06284598B1
公开(公告)日：2001-09-04
申请号：US09447893
申请日：1999-11-23
申请人： Patrick J. Kelley , Ranbir Singh , Larry B. Fritzinger , Cynthia C. Lee , John Simon Molloy
发明人： Patrick J. Kelley , Ranbir Singh , Larry B. Fritzinger , Cynthia C. Lee , John Simon Molloy
IPC分类号： H01L31336
CPC分类号： H01L27/11521 , H01L27/115
摘要： A method of forming round corners for a gate oxide between a floating gate and a control gate of a memory cell comprises the steps of forming the floating gate over a tunnel oxide; forming a mask over the floating gate; forming rounded end caps adjacent distal ends of the mask; transferring the rounding of the end caps to top corners of the floating gate; forming the gate oxide over the floating gate; and, forming the control gate over the gate oxide. A memory cell having a rounded corner interface between the floating gate and control gate is also provided.
摘要翻译：在存储单元的浮动栅极和控制栅极之间形成用于栅极氧化物的圆角的方法包括在隧道氧化物上形成浮置栅极的步骤; 在浮动门上形成掩模; 在所述掩模的远端附近形成圆形端盖; 将端盖的四舍五入转移到浮动门的顶角; 在浮栅上形成栅极氧化物; 并且在栅极氧化物上形成控制栅极。还提供了在浮动栅极和控制栅极之间具有圆角接合的存储单元。

4. 发明授权

US06197699B1 In situ dry cleaning process for poly gate etch 失效
标题翻译：多栅极蚀刻的原位干洗工艺
公开(公告)号：US06197699B1
公开(公告)日：2001-03-06
申请号：US09009399
申请日：1998-01-20
申请人： Larry B. Fritzinger , Cynthia C. Lee , Edward M. Middlebrook , John M. Sniegowski
发明人： Larry B. Fritzinger , Cynthia C. Lee , Edward M. Middlebrook , John M. Sniegowski
IPC分类号： H01H100
CPC分类号： H01J37/32862 , H01L21/3065
摘要： The present invention provides a method for cleaning a contaminated chamber used in the manufacture of semiconductor devices. In one embodiment, the method comprises the steps of injecting, under pressure, a gas mixture of a fluorine-containing gas and an inert gas into the contaminated chamber, radiating the contaminated chamber with a radio frequency during the step of injecting, and removing volatile by-products or solid particulates from the contaminated chamber by performing pump-purge cycles within the contaminated chamber.
摘要翻译：本发明提供了一种清洁用于制造半导体器件的污染室的方法。在一个实施方案中，该方法包括以下步骤：在压力下将含氟气体和惰性气体的气体混合物注入到污染室中，在注入步骤期间以射频辐射污染室，并除去挥发性通过在受污染的室内进行泵清洗循环，从受污染的室中产生副产物或固体颗粒物。

5. 发明授权

US06174786B1 Shallow trench isolation method providing rounded top trench corners 有权
标题翻译：浅沟槽隔离方法提供圆顶顶沟
公开(公告)号：US06174786B1
公开(公告)日：2001-01-16
申请号：US09447154
申请日：1999-11-23
申请人： Patrick J. Kelley , Ranbir Singh , Larry B. Fritzinger , Cynthia C. Lee , John Simon Molloy
发明人： Patrick J. Kelley , Ranbir Singh , Larry B. Fritzinger , Cynthia C. Lee , John Simon Molloy
IPC分类号： H01L2176
CPC分类号： H01L21/76232
摘要： A method of shallow trench isolation by forming a trench in a semiconductor device comprises the steps of forming an oxide layer; forming a mask layer; anisotropically etching the mask layer; forming a second oxide layer; forming a cap layer; forming rounded end caps adjacent the mask; and transferring the rounding of the caps to the top corners of the trench. The oxide layer is formed over a substrate of the semiconductor device. The mask layer is formed over the oxide layer. The mask layer is then anisotropically etched to form the mask and an opening in the mask. The opening in the mask exposes the substrate, and the width of the opening is greater than the width of the trench. Blanket etching the cap layer forms the rounded end caps. The rounded end caps are adjacent to the mask on opposite ends of the opening, and the distance between the end caps is about equal to the width of the trench. The trench is formed by plasma etching the trench. During this process, the rounding of the end caps is transferred to the top corners of a trench.
摘要翻译：通过在半导体器件中形成沟槽来进行浅沟槽隔离的方法包括以下步骤：形成氧化物层; 形成掩模层; 各向异性地蚀刻掩模层; 形成第二氧化物层; 形成盖层; 在掩模附近形成圆形端盖; 并且将盖的四舍五入转移到沟槽的顶角。氧化物层形成在半导体器件的衬底上。掩模层形成在氧化物层的上方。然后对掩模层进行各向异性蚀刻以形成掩模和掩模中的开口。掩模中的开口露出衬底，并且开口的宽度大于沟槽的宽度。蚀刻盖层的毯子形成圆形端盖。圆形端盖在开口的相对端与掩模相邻，并且端盖之间的距离大约等于沟槽的宽度。通过等离子体蚀刻沟槽形成沟槽。在此过程中，端盖的四舍五入转移到沟槽的顶角。

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