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1. 发明授权

US08030925B2 Tunable superconducting resonator and methods of tuning thereof 失效
标题翻译：可调谐超导谐振器及其调谐方法
公开(公告)号：US08030925B2
公开(公告)日：2011-10-04
申请号：US11717596
申请日：2007-03-12
申请人： Robert B. Hammond , Jonathan Z. Sun , Douglas J. Scalapino , Timothy W. James , Lincoln C. Bourne
发明人： Robert B. Hammond , Jonathan Z. Sun , Douglas J. Scalapino , Timothy W. James , Lincoln C. Bourne
IPC分类号： G01V3/00
CPC分类号： H01G4/008 , G01R33/34007 , G01R33/34023 , G01R33/34053 , G01R33/341 , G01R33/3642 , G01R33/3671 , H01F6/06 , H01P1/203 , H01P7/08 , H01P7/088 , H01Q1/364 , H03K17/78 , H03K17/92 , H03K2217/0036
摘要： A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.
摘要翻译：调谐高温超导体（HTS）谐振器的方法包括提供HTS电感器和HTS电容器的步骤，HTS电容器电连接到HTS电感器。调谐体靠近HTS电感和HTS电容。改变调谐体相对于HTS电感器和HTS电容器的相对位置，以调谐谐振器。提供了包括具有平坦表面的基板的可调谐谐振电路。由HTS材料形成的至少一个谐振器设置在基板上，谐振器具有一个或多个匝，当组合时，该谐振器转过大于360°。

2. 发明授权

US5328893A Superconducting devices having a variable conductivity device for introducing energy loss 失效
标题翻译：具有用于引入能量损失的可变导电装置的超导装置
公开(公告)号：US5328893A
公开(公告)日：1994-07-12
申请号：US719736
申请日：1991-06-24
申请人： Jonathan Z. Sun , Robert B. Hammond , Douglas J. Scalapino
发明人： Jonathan Z. Sun , Robert B. Hammond , Douglas J. Scalapino
IPC分类号： H01L39/00 , H01L39/16 , H01L39/22 , H01P1/15 , H01P1/185 , H01P1/203 , H01P7/08 , H01P1/201
CPC分类号： H01P7/088 , H01P1/203 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： Active superconductive devices are formed having a variable conductive element in electromagnetic contact with a superconductor. In one embodiment, a variable ohmic conductive device, such as a photoconductor, is placed adjacent a superconductor. By varying the optical radiation on the photoconductor, the electromagnetic environment adjacent the superconductor is changed, resulting in changed electrical properties. The superconductor may be patterned as a reject filter, with a photoconductor forming a microwave switch. Alternatively, a delay line plus variable ohmic element forms a phase shifter.
摘要翻译：有源超导器件形成为具有与超导体电磁接触的可变导电元件。在一个实施例中，诸如光电导体的可变欧姆导电器件邻近超导体放置。通过改变感光体上的光辐射，改变与超导体相邻的电磁环境，导致电性能的变化。超导体可以被图案化为滤波器，光电导体形成微波开关。或者，延迟线加上可变欧姆元件形成移相器。

3. 发明授权

US5071830A Metalorganic deposition method for forming epitaxial thallium-based copper oxide superconducting films 失效
标题翻译：用于形成外延铊基氧化铜超导薄膜的金属有机沉积方法
公开(公告)号：US5071830A
公开(公告)日：1991-12-10
申请号：US238919
申请日：1988-08-31
申请人： William L. Olson , Michael M. Eddy , Robert B. Hammond , Timothy W. James , McDonald Robinson
发明人： William L. Olson , Michael M. Eddy , Robert B. Hammond , Timothy W. James , McDonald Robinson
IPC分类号： C23C14/08 , H01L39/14 , H01L39/24 , H01P1/203
CPC分类号： H01L39/2448 , C23C14/087 , H01L39/143 , H01L39/2451 , H01P1/203 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/734 , Y10S505/735
摘要： An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.
摘要翻译：外延铊基氧化铜超导膜是通过金属有机沉积在晶体基底上形成的，其包括在所述基底上形成羧酸盐皂溶液膜，在350℃或更低的温度下预分解所述膜，并在温度为800-900℃，在氧的存在下和铊的过压足够的时间以产生所述外延超导膜。

4. 发明授权

US4821091A Polysilicon photoconductor for integrated circuits 失效
标题翻译：用于集成电路的多晶硅光电导体
公开(公告)号：US4821091A
公开(公告)日：1989-04-11
申请号：US147130
申请日：1988-01-21
申请人： Robert B. Hammond , Douglas R. Bowman
发明人： Robert B. Hammond , Douglas R. Bowman
IPC分类号： H01L27/144 , H01L31/0368 , H01L31/09 , H01L31/18 , H01L27/14 , H01L27/12 , H01L29/04
CPC分类号： H01L31/1804 , H01L27/144 , H01L31/03682 , H01L31/09 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
摘要翻译：多晶硅的光导元件具有固有的响应时间，其不限制整个电路响应。通过LPCVD将未掺杂的多晶硅层沉积到二氧化硅上的所选厚度。然后将沉积的多晶硅在选定的温度下退火，并且有效地获得有效产生增强的电流输出的晶体尺寸的时间。随后，退火的多晶层通过离子注入暴露并损坏有效获得快速光导响应的损伤因子。

5. 发明授权

US06633208B2 Filter with improved intermodulation distortion characteristics and methods of making the improved filter 有权
标题翻译：滤波器具有改进的互调失真特性和制作改进滤波器的方法
公开(公告)号：US06633208B2
公开(公告)日：2003-10-14
申请号：US09886768
申请日：2001-06-19
申请人： Markku I. Salkola , Robert B. Hammond , Neal Fenzi
发明人： Markku I. Salkola , Robert B. Hammond , Neal Fenzi
IPC分类号： H01P701
CPC分类号： H01P1/20381 , H01P1/20 , Y10S505/70 , Y10S505/866
摘要： Multi-stage electric filters with improved intermodulation-distortion characteristics and a method for designing such electric filters is provided. In general, the invention may include a multi-resonator electric filter in which one or more of the resonators have been intentionally designed to have a different IP and/or Q than the other resonators in the electric filter. In one case, the electric filters include a 4-resonator Chebyshev narrow pass-band filter with at least the first resonator having a Q and/or IP different from at least one other resonator in the filter. The filter thereby has improved IMD power over conventional designed filters while maintaining high Q. In a preferred embodiment the filter may include a superconducting material. The relative Q and IP of the respective resonators in the improved filter may depend on the relative strength of in-band and out-of-band signals. The performance and cost of the electric filter may be optimized by designing the filter to have a relative Q and IP required by the particular application.
摘要翻译：提供了具有改进的互调失真特性的多级电滤波器和用于设计这种滤波器的方法。通常，本发明可以包括多谐振器电滤波器，其中一个或多个谐振器被有意设计成具有与电滤波器中的其它谐振器不同的IP和/或Q。在一种情况下，电滤波器包括4谐振器Chebyshev窄通带滤波器，至少第一谐振器具有与滤波器中的至少一个其它谐振器不同的Q和/或IP。因此，过滤器相对于常规设计的过滤器具有改善的IMD功率，同时保持高Q。在优选实施例中，过滤器可以包括超导材料。改进滤波器中相应的谐振器的相对Q和IP可以取决于带内和带外信号的相对强度。可以通过将滤波器设计为具有特定应用所需的相对Q和IP来优化电滤波器的性能和成本。

6. 发明授权

US4948741A Polysilicon photoconductor for integrated circuits 失效
标题翻译：用于集成电路的多晶硅光电导体
公开(公告)号：US4948741A
公开(公告)日：1990-08-14
申请号：US315449
申请日：1989-02-23
申请人： Robert B. Hammond , Douglas R. Bowman
发明人： Robert B. Hammond , Douglas R. Bowman
IPC分类号： H01L27/144 , H01L31/0368 , H01L31/09 , H01L31/18
CPC分类号： H01L31/1804 , H01L27/144 , H01L31/03682 , H01L31/09 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
摘要翻译：多晶硅的光导元件具有固有的响应时间，其不限制整个电路响应。通过LPCVD将未掺杂的多晶硅层沉积到二氧化硅上的所选厚度。然后将沉积的多晶硅在选定的温度下退火，并且有效地获得有效产生增强的电流输出的晶体尺寸的时间。随后，退火的多晶层通过离子注入暴露并损坏有效获得快速光导响应的损伤因子。

7. 发明授权

US5358926A Epitaxial thin superconducting thallium-based copper oxide layers 失效
标题翻译：外延薄超导铊基氧化铜层
公开(公告)号：US5358926A
公开(公告)日：1994-10-25
申请号：US98838
申请日：1993-07-29
申请人： William L. Olson , Michael M. Eddy , Robert B. Hammond , Timothy W. James , McDonald Robinson
发明人： William L. Olson , Michael M. Eddy , Robert B. Hammond , Timothy W. James , McDonald Robinson
IPC分类号： C23C14/08 , H01L39/14 , H01L39/24 , H01P1/203 , H01L39/00
CPC分类号： H01L39/2448 , C23C14/087 , H01L39/143 , H01L39/2451 , H01P1/203 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/734 , Y10S505/735
摘要： Novel articles are provided of thin super-conductive thallium-based copper oxide layers on inorganic, usually crystalline substrates. Novel methods are provided for ease of producing such articles, particularly involving sol-gel techniques and laser ablation. The articles have a highly oriented superconductive thallium-based copper oxide film, particularly epitaxial, with high superconductive transition temperatures and desirable electrical properties. The subject articles find use in a wide variety of electronic applications, particularly in microwave and millimeter wave devices.
摘要翻译：在无机，通常是结晶的基底上提供了薄的超导导铊基氧化铜层的新型制品。提供了用于容易地生产这种制品的新方法，特别是涉及溶胶 - 凝胶技术和激光烧蚀。这些制品具有高取向的超导铊基氧化铜膜，特别是外延，具有高超导转变温度和所需的电性能。主题文章用于各种电子应用中，特别是在微波和毫米波装置中。

8. 发明授权

US4490709A InP:Fe Photoconducting device 失效
标题翻译： InP：Fe光电导体
公开(公告)号：US4490709A
公开(公告)日：1984-12-25
申请号：US447349
申请日：1982-12-06
申请人： Robert B. Hammond , Nicholas G. Paulter , Ronald S. Wagner
发明人： Robert B. Hammond , Nicholas G. Paulter , Ronald S. Wagner
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/09 , H01L31/08 , H01L27/14
CPC分类号： H01L31/03042 , H01L31/0224 , H01L31/09 , Y02E10/544
摘要： A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
摘要翻译：由掺杂Fe的半绝缘InP晶体制造的光电导体器件呈现指数衰减瞬变，其衰减时间与Fe浓度成反比。在具有AuGe和AuSn接触的光导器件中证明了高达5的光电导增益。响应时间可以达到150〜1000皮秒。

9. 发明授权

US4243888A Laser beam alignment apparatus and method 失效
标题翻译：激光束对准装置及方法
公开(公告)号：US4243888A
公开(公告)日：1981-01-06
申请号：US37982
申请日：1979-05-10
申请人： Charles R. Gruhn , Robert B. Hammond
发明人： Charles R. Gruhn , Robert B. Hammond
IPC分类号： G01B11/26 , G01N21/00 , G01N23/00
CPC分类号： G01B11/26
摘要： The disclosure relates to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.
摘要翻译：本公开涉及一种用于激光束对准的装置和方法。使用激光束路径中的光盘的热电性能来提供光束对准和/或自动激光对准的指示。

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