专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08030654B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08030654B2
公开(公告)日：2011-10-04
申请号：US12061425
申请日：2008-04-02
申请人： Jianshe Xue , Seung Moo Rim , Ke Liang
发明人： Jianshe Xue , Seung Moo Rim , Ke Liang
IPC分类号： H01L29/76 , H01L31/36 , H01L31/112
CPC分类号： H01L29/458 , H01L29/78618
摘要： A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.
摘要翻译：提供了包括栅极，栅极绝缘层，有源层以及源极和漏极的薄膜晶体管。栅电极与有源层的沟道区重叠，栅极绝缘层设置在栅电极和有源层之间，源极和漏极分别与有源层的源极区和漏极区重叠，并且在有源层和源电极和漏电极之间设置SiNx或SiOxNy的允许电子通道的薄膜。

2. 发明授权

US08130189B2 Gate driving device for liquid crystal display 有权
标题翻译：液晶显示器门驱动装置
公开(公告)号：US08130189B2
公开(公告)日：2012-03-06
申请号：US12125202
申请日：2008-05-22
申请人： Yubo Xu , Bongyeol Ryu , Ke Liang , Liang Yan
发明人： Yubo Xu , Bongyeol Ryu , Ke Liang , Liang Yan
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G11C19/28
摘要： The invention relates to a gate driving device for Thin Film Transistor liquid crystal display comprising: a plurality of shift registers directly deposited on an array substrate, said shift registers being composed of effect transistors and a capacitor, obtaining a gate driving signal voltage by controlling an input signal. Said shift register can be realized by 5-layer mask process or 4-layer mask process, by arranging the field effect transistors on the margin part outside the active region on the substrate or at the edge of the substrate, and then directly depositing them on an array substrate. The invention obtains a gate driving signal voltage by the shift registers directly deposited on the substrate, thus overcoming the shortage of the need of driving chips and film layers in the prior art, substantially reducing the production cost for LCD.
摘要翻译：本发明涉及一种用于薄膜晶体管液晶显示器的栅极驱动装置，包括：直接沉积在阵列基板上的多个移位寄存器，所述移位寄存器由效应晶体管和电容器组成，通过控制栅极驱动信号电压获得栅极驱动信号电压输入信号。所述移位寄存器可以通过5层掩模处理或4层掩模处理来实现，通过将场效应晶体管布置在衬底上或基板边缘的有源区域之外的边界部分上，然后将它们直接放置在阵列基板。本发明通过直接沉积在衬底上的移位寄存器获得栅极驱动信号电压，从而克服了现有技术中驱动芯片和膜层的需求的不足，从而大大降低了LCD的生产成本。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式