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1. 发明申请

US20120190177A1 N-type carrier enhancement in semiconductors 失效
标题翻译：半导体中的N型载流子增强
公开(公告)号：US20120190177A1
公开(公告)日：2012-07-26
申请号：US13436850
申请日：2012-03-31
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/265 , H01L21/20
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.
摘要翻译：一种方法包括将锗（Ge）层外延生长到Ge衬底上并将具有补偿原子半径的补偿物质结合到Ge层中。该方法包括将具有掺杂剂原子半径的n型掺杂物种类植入到Ge层中。该方法包括选择n型掺杂剂物质和补偿物质，使得Ge原子半径的大小在n型掺杂剂原子半径和补偿原子半径之间。

2. 发明申请

US20120135587A1 N-type carrier enhancement in semiconductors 有权
标题翻译：半导体中的N型载流子增强
公开(公告)号：US20120135587A1
公开(公告)日：2012-05-31
申请号：US13357656
申请日：2012-01-25
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
摘要翻译：公开了一种在半导体中产生n型载流子的方法。该方法包括提供具有原子半径的半导体。将n型掺杂物种植入半导体，其中n型掺杂剂物质具有掺杂剂原子半径。将补偿物种植入到半导体中，补偿物质具有补偿原子半径。以使得半导体原子半径的尺寸在掺杂剂原子半径和补偿原子半径之间的方式选择n型掺杂物种类和补偿种类。公开了用于在锗（Ge）中生成n型载流子的另一种方法。该方法包括设定载体的目标浓度，将一定剂量的n型掺杂剂物质注入到Ge中，并选择与目标载体浓度分数相对应的剂量。对Ge进行热退火，以激活n型掺杂物种类并修复至少一部分注入损伤。重复注入和热退火直到目标n型载流子浓度达到。

3. 发明授权

US08642431B2 N-type carrier enhancement in semiconductors 失效
标题翻译：半导体中的N型载流子增强
公开(公告)号：US08642431B2
公开(公告)日：2014-02-04
申请号：US13437036
申请日：2012-04-02
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.
摘要翻译：场效应晶体管（FET）具有在Ge中托管的通道。 FET通过选择性外延形成硅 - 锗（SiGe）源极和漏极。 SiGe源极和漏极在Ge沟道上施加拉伸应力。在形成SiGe源极和漏极期间，n型掺杂物质和补偿物质被并入到SiGe源极和漏极中。选择n型掺杂物种类和补偿种类，使得SiGe原子半径的尺寸在掺杂剂原子半径和补偿物质原子半径之间。

4. 发明授权

US08178430B2 N-type carrier enhancement in semiconductors 有权
公开(公告)号：US08178430B2
公开(公告)日：2012-05-15
申请号：US12420258
申请日：2009-04-08
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/265 , H01L21/425
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.

5. 发明授权

US08476152B2 N-type carrier enhancement in semiconductors 失效
标题翻译：半导体中的N型载流子增强
公开(公告)号：US08476152B2
公开(公告)日：2013-07-02
申请号：US13436850
申请日：2012-03-31
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.
摘要翻译：一种方法包括将锗（Ge）层外延生长到Ge衬底上并将具有补偿原子半径的补偿物质结合到Ge层中。该方法包括将具有掺杂剂原子半径的n型掺杂物种类植入到Ge层中。该方法包括选择n型掺杂剂物质和补偿物质，使得Ge原子半径的大小在n型掺杂剂原子半径和补偿原子半径之间。

6. 发明申请

US20120190161A1 N-type carrier enhancement in semiconductors 失效
标题翻译：半导体中的N型载流子增强
公开(公告)号：US20120190161A1
公开(公告)日：2012-07-26
申请号：US13437036
申请日：2012-04-02
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.
摘要翻译：场效应晶体管（FET）具有在Ge中托管的通道。 FET通过选择性外延形成硅 - 锗（SiGe）源极和漏极。 SiGe源极和漏极在Ge沟道上施加拉伸应力。在形成SiGe源极和漏极期间，n型掺杂物质和补偿物质被并入到SiGe源极和漏极中。选择n型掺杂物种类和补偿种类，使得SiGe原子半径的尺寸在掺杂剂原子半径和补偿物质原子半径之间。

7. 发明授权

US08343863B2 N-type carrier enhancement in semiconductors 有权
标题翻译：半导体中的N型载流子增强
公开(公告)号：US08343863B2
公开(公告)日：2013-01-01
申请号：US13357656
申请日：2012-01-25
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/265 , H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
摘要翻译：公开了一种在半导体中产生n型载流子的方法。该方法包括提供具有原子半径的半导体。将n型掺杂物种植入半导体，其中n型掺杂剂物质具有掺杂剂原子半径。将补偿物种植入到半导体中，补偿物质具有补偿原子半径。以使得半导体原子半径的尺寸在掺杂剂原子半径和补偿原子半径之间的方式选择n型掺杂物种类和补偿种类。公开了用于在锗（Ge）中生成n型载流子的另一种方法。该方法包括设定载体的目标浓度，将一定剂量的n型掺杂剂物质注入到Ge中，并选择与目标载体浓度分数相对应的剂量。对Ge进行热退火，以激活n型掺杂物种类并修复至少一部分注入损伤。重复注入和热退火直到目标n型载流子浓度达到。

8. 发明申请

US20100261319A1 N-type carrier enhancement in semiconductors 有权
标题翻译：半导体中的N型载流子增强
公开(公告)号：US20100261319A1
公开(公告)日：2010-10-14
申请号：US12420258
申请日：2009-04-08
申请人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
发明人： Jee Hwan Kim , Stephen W. Bedell , Siegfried Maurer , Devendra K. Sadana
IPC分类号： H01L21/265 , H01L21/20 , H01L21/335
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
摘要翻译：公开了一种在半导体中产生n型载流子的方法。该方法包括提供具有原子半径的半导体。将n型掺杂物种植入半导体，其中n型掺杂剂物质具有掺杂剂原子半径。将补偿物种植入到半导体中，补偿物质具有补偿原子半径。以使得半导体原子半径的尺寸在掺杂剂原子半径和补偿原子半径之间的方式选择n型掺杂物种类和补偿种类。公开了用于在锗（Ge）中生成n型载流子的另一种方法。该方法包括设定载体的目标浓度，将一定剂量的n型掺杂剂物质注入到Ge中，并选择与目标载体浓度分数相对应的剂量。对Ge进行热退火，以激活n型掺杂物种类并修复至少一部分注入损伤。重复注入和热退火直到目标n型载流子浓度达到。

9. 发明授权

US09059073B2 Method for controlled removal of a semiconductor device layer from a base substrate 有权
标题翻译：从基底基板控制去除半导体器件层的方法
公开(公告)号：US09059073B2
公开(公告)日：2015-06-16
申请号：US13603944
申请日：2012-09-05
申请人： Stephen W. Bedell , Cheng-Wei Cheng , Devendra K. Sadana , Kuen-Ting Shiu , Norma E. Sosa Cortes
发明人： Stephen W. Bedell , Cheng-Wei Cheng , Devendra K. Sadana , Kuen-Ting Shiu , Norma E. Sosa Cortes
IPC分类号： H01L21/20 , H01L21/18 , H01L21/78 , H01L21/02 , H01L31/18
CPC分类号： H01L21/187 , H01L21/02002 , H01L21/7813 , H01L31/1892 , Y02E10/50
摘要： A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.
摘要翻译：提供从基底基板去除半导体器件层的方法，其包括在基底基板的上表面上提供裂纹扩展层。在裂纹扩展层上形成包括至少一个半导体器件的半导体器件层。接下来，蚀刻裂纹扩展层的端部以在裂纹扩展层中引发裂纹。蚀刻的裂纹扩展层然后被切割，以向半导体器件层的表面和另一个裂开的裂纹扩展层部分提供切割的裂纹扩展层部分到基底衬底的上表面。从半导体器件层的表面去除切割的裂纹扩展层部分，并从基底基板的上表面除去另一个裂开的裂纹扩展层部分。

10. 发明授权

US08927318B2 Spalling methods to form multi-junction photovoltaic structure 有权
标题翻译：形成多结光伏结构的剥落方法
公开(公告)号：US08927318B2
公开(公告)日：2015-01-06
申请号：US13160067
申请日：2011-06-14
申请人： Stephen W. Bedell , Devendra K. Sadana , Davood Shahrjerdi
发明人： Stephen W. Bedell , Devendra K. Sadana , Davood Shahrjerdi
IPC分类号： H01L31/0216 , H01L21/18 , H01L21/02 , H01L21/304 , H01L31/0687 , H01L31/18
CPC分类号： H01L31/074 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L21/304 , H01L31/0304 , H01L31/0312 , H01L31/0687 , H01L31/06875 , H01L31/0725 , H01L31/0745 , H01L31/075 , H01L31/076 , H01L31/1808 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A method cleaving a semiconductor material that includes providing a germanium substrate having a germanium and tin alloy layer is present therein. A stressor layer is deposited on a surface of the germanium substrate. A stress from the stressor layer is applied to the germanium substrate, in which the stress cleaves the germanium substrate to provide a cleaved surface. The cleaved surface of the germanium substrate is then selective to the germanium and tin alloy layer of the germanium substrate. In another embodiment, the germanium and tin alloy layer may function as a fracture plane during a spalling method.
摘要翻译：一种切割半导体材料的方法，其中包括提供具有锗和锡合金层的锗衬底。应力层沉积在锗衬底的表面上。来自应力层的应力施加到锗衬底，其中应力切割锗衬底以提供切割表面。然后，锗衬底的切割表面对锗衬底的锗和锡合金层是选择性的。在另一个实施例中，锗和锡合金层可以在剥落方法中用作断裂面。

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