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1. 发明申请

US20110278538A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110278538A1
公开(公告)日：2011-11-17
申请号：US13104487
申请日：2011-05-10
申请人： Hyung Duk KO , Jung Ja YANG , Yu Seung KIM , Youn Joon SUNG , Soo Jin JUNG , Dae Cheon KIM , Byung Kwun LEE
发明人： Hyung Duk KO , Jung Ja YANG , Yu Seung KIM , Youn Joon SUNG , Soo Jin JUNG , Dae Cheon KIM , Byung Kwun LEE
IPC分类号： H01L33/06 , H01L33/58
CPC分类号： H01L33/20 , H01L33/38 , H01L33/42 , H01L33/44 , H01L2933/0091
摘要： Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括发光结构和图案。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。该图案形成在发光结构的表面中的至少一个发光表面上。该图案具有形状相似的多个凸部或凹部。具有形成在其上的图案的发光面具有多个尺寸相等并以规则排列的虚拟参考区域。凸部或凹部设置在参考区域中，使得其边缘的一部分与多个虚拟参考区域之一的轮廓接触。

2. 发明申请

US20090155939A1 Method of isolating semiconductor laser diodes 失效
标题翻译：隔离半导体激光二极管的方法
公开(公告)号：US20090155939A1
公开(公告)日：2009-06-18
申请号：US12149313
申请日：2008-04-30
申请人： Youn Joon SUNG , Su Hee CHAE
发明人： Youn Joon SUNG , Su Hee CHAE
IPC分类号： H01L21/304
CPC分类号： H01S5/0201 , H01S5/0203
摘要： Provided is a method of isolating semiconductor laser diodes (LDs), the method including the steps of: preparing a substrate; forming a plurality of semiconductor LDs on the substrate, each semiconductor LD including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, an n-electrode, a ridge portion, and a p-electrode, the ridge portion being formed by etching the p-type semiconductor layer such that a portion of the p-type semiconductor layer protrudes, the p-electrode being formed on the ridge portion; partially forming base cut lines on the surface of the substrate excluding the ridge portions; and isolating the semiconductor LDs into a bar shape along the base cut lines.
摘要翻译：提供一种隔离半导体激光二极管（LD）的方法，该方法包括以下步骤：制备衬底; 在基板上形成多个半导体LD，每个半导体LD包括n型半导体层，有源层，p型半导体层，n电极，脊部分和p电极，脊部分通过蚀刻p型半导体层而形成，使得p型半导体层的一部分突出，p电极形成在脊部上; 在除了脊部之外的基板的表面上部分地形成基切割线; 并且将半导体LD沿基底切割线隔离成棒状。

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