会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Dielectric material with low temperature coefficient and high quality
    • 介电材料,温度系数低,质量好
    • US6121174A
    • 2000-09-19
    • US938158
    • 1997-09-26
    • Hitoshi YokoiHidetoshi MizutaniMotohiko SatoKazushige Ohbayashi
    • Hitoshi YokoiHidetoshi MizutaniMotohiko SatoKazushige Ohbayashi
    • C04B35/18C03C10/00C03C10/06C04B35/00H01B3/02H01B3/12H01P7/08H05K1/03H05K3/46C03C14/00
    • H01P7/082C03C10/0045H01P7/084H05K1/0306
    • A dielectric material is disclosed which has a small absolute value of the temperature coefficient of resonance frequency and a high coefficient of unloaded quality. Also disclosed are a process for producing the dielectric material and multilayer and other circuit boards containing the dielectric material. The dielectric material is a highly densified material having a water absorption lower than 0.1%, which is obtained by mixing 95.5 to 99.5 percent by weight mixture of a glass frit and a strontium compound with 0.5 to 4.5 percent by weight titanium dioxide, compacting the resultant mixture, and sintering the compact at a relatively low temperature around 930.degree. C. This dielectric material is a glass ceramic containing strontium anorthite (SrAl.sub.2 Si.sub.2 O.sub.8) as the main crystalline phase, and may contain the TiO.sub.2, which remains unchanged after sintering. The absolute value of the temperature coefficient of resonance frequency of the dielectric material is 20 ppm/.degree. C. or lower, preferably 10 ppm/.degree. C. or lower, more preferably 5 ppm/.degree. C. or lower. The product of the unloaded quality coefficient and resonance frequency is 1,800 GHz or larger, preferably 2,500 GHz or larger. This material therefore has excellent dielectric properties.
    • 公开了一种介电材料,其谐振频率的温度系数的绝对值小,并且具有高的卸载质量系数。 还公开了用于制造包含电介质材料的电介质材料和多层和其它电路板的方法。 电介质材料是吸水率低于0.1%的高度致密化的材料,其通过将玻璃料和锶化合物的95.5-99.5重量%的混合物与0.5-4.5重量%的二氧化钛混合而获得,将所得物 混合物,并在930℃附近的相对较低的温度下烧结。该介电材料是含有锶钙长石(SrAl 2 Si 2 O 8)作为主要结晶相的玻璃陶瓷,并且可以含有在烧结后保持不变的TiO 2。 介电材料的共振频率的温度系数的绝对值为20ppm /℃以下,优选为10ppm /℃以下,更优选为5ppm /℃以下。 无载质量系数和谐振频率的乘积为1800GHz以上,优选为2,500GHz以上。 因此该材料具有优异的介电特性。
    • 4. 发明授权
    • Dielectric material and process for producing the same
    • 介电材料及其制造方法
    • US6165927A
    • 2000-12-26
    • US65607
    • 1998-04-24
    • Motohiko SatoHitoshi YokoiKazushige Ohbayashi
    • Motohiko SatoHitoshi YokoiKazushige Ohbayashi
    • C04B35/468H01B3/12H01G4/12H01P1/205H01P7/10
    • H01G4/1227C04B35/4686H01B3/12H01P1/2056H01P7/10
    • A dielectric material based on BaO-RE.sub.2 O.sub.3 -TiO.sub.2 is disclosed, which has a relatively high relative permittivity .epsilon..sub.r, a small absolute value of the temperature coefficient of resonance frequency .tau..sub.f and a high coefficient of unloaded quality Q.sub.u. Processes for producing the dielectric material are also disclosed. The dielectric material comprises 100 parts by weight of main ingredients having a composition represented by xBaO-yRE.sub.2 O.sub.3 -zTiO.sub.2 (wherein RE represents a rare earth element and x+y+z=100) and up to 5 parts by weight of at least one alkali metal oxide. This alkali metal oxide serves to improve .epsilon..sub.r and Q.sub.u without a considerable sacrifice of .tau..sub.f. The RE preferably consists of samarium or a combination of samarium with neodymium and/or lanthanum. In producing the dielectric material, a dense sintered body can be obtained without fail by using a raw material containing hydroxyl groups as a starting material for the rare-earth ingredient among the main ingredients.
    • 公开了一种基于BaO-RE2O3-TiO2的介电材料,它具有相对较高的相对介电常数εr,谐振频率τf的温度系数的绝对值小,以及无负载质量Qu的高系数。 还公开了用于制造电介质材料的方法。 电介质材料包含100重量份具有由xBaO-yRE 2 O 3 -ZTiO 2(其中RE表示稀土元素并且x + y + z = 100)表示的组成的主要成分和至多5重量份的至少一种碱 金属氧化物。 这种碱金属氧化物用于改善ε兰曲,而没有相当大的牺牲τf。 RE优选由钐或钐与钕和/或镧的组合组成。 在电介质材料的制造中,通过使用含有羟基的原料作为主要成分中的稀土成分的原料,可以不失败地获得致密的烧结体。
    • 7. 发明授权
    • Dielectric material, a method for producing the same and a dielectric
resonator device comprising same
    • 电介质材料,其制造方法和包括该介电材料的介质谐振器装置
    • US6117806A
    • 2000-09-12
    • US957627
    • 1997-10-24
    • Hitoshi YokoiAkifumi TosaKazushige Ohbayashi
    • Hitoshi YokoiAkifumi TosaKazushige Ohbayashi
    • C04B35/495H01P7/10
    • C04B35/495H01P7/10
    • Dielectric materials are disclosed that are based on BaO--ZnO--Ta.sub.2 O.sub.5 represented by the formula Ba(Zn.sub.1/3 Ta.sub.2/3)O.sub.3. Ba has been partly replaced by K and either Zn or Ta has been replaced by at least one element selected from Mg, Zr, Ga, Ni, Nb, Sn. The dielectric materials have a relatively high permittivity, a small absolute value of the temperature coefficient of resonance frequency, and a high unloaded quality factor. A method for producing the dielectric materials is also disclosed which includes mixing given amounts of starting materials, such as, for example, BaCO.sub.3, ZnO, Ta.sub.2 O.sub.5, K.sub.2 CO.sub.3, MgCO.sub.3, SnO.sub.2 or ZrO.sub.2, compacting the mixture to produce a compact, sintering the compact in an oxidizing atmosphere such as, for example, air, at 1,400 and 1,600.degree. C., more preferably at 1,550 to 1,600.degree. C. for 2 hours, and then heating the sintered compact at a temperature lower than the sintering temperature by from 50 to 250.degree. C., e.g., by 100.degree. C., for at least 12 hours, preferably for 24 hours. A dielectric resonator comprising the dielectric material of the present invention is also disclosed.
    • 公开了基于由式Ba(Zn + E,fra 1/3 + EE Ta + E,fra 2/3 + EE)O 3表示的BaO-ZnO-Ta 2 O 5的介电材料。 Ba部分被K替代,并且Zn或Ta已经被选自Mg,Zr,Ga,Ni,Nb,Sn中的至少一种元素代替。 电介质材料具有相对高的介电常数,谐振频率的温度系数的绝对值小,以及高的卸载品质因数。 还公开了一种用于制造电介质材料的方法,其包括混合给定量的起始材料,例如BaCO 3,ZnO,Ta 2 O 5,K 2 CO 3,MgCO 3,SnO 2或ZrO 2,将该混合物压实成压坯, 在氧化气氛例如空气中,在1,400和1600℃,更优选在1,550至1600℃下进行2小时,然后在低于烧结温度的温度下将烧结体加热50 至250℃,例如100℃,至少12小时,优选24小时。 还公开了包括本发明的介电材料的介质谐振器。
    • 8. 发明申请
    • TEMPERATURE SENSOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
    • 温度传感器元件及其制造方法
    • US20090268779A1
    • 2009-10-29
    • US12111405
    • 2008-04-29
    • Nobuyuki HottaKazushige Ohbayashi
    • Nobuyuki HottaKazushige Ohbayashi
    • G01K7/02
    • G01K7/04G01K1/10G01K1/18G01K2205/04
    • A temperature sensor element 10 has a reduced thermal conduction path from a measurement object to a sensitive end portion 22 of a thermocouple 21 and a high-dense insulating ceramic base body 20. Since the temperature sensor element 10 has excellent thermal conductivity from the measurement object to the sensitive end portion 22 of the thermocouple 21, it is also excellent in responsiveness at the time of temperature detection. Further, corrosion and material deterioration of the thermocouple 21 is unlikely to occur because the thermocouple 21 does not directly contact the measurement object (exhaust gas). As a result, the temperature sensor element 10 exhibits excellent durability. Therefore, the temperature sensor element 10 exhibits a good responsiveness at the time of temperature detection as well as excellent durability.
    • 温度传感器元件10具有从测量对象到热电偶21和高密度绝缘陶瓷基体20的敏感端部22的热传导路径的减小。由于温度传感器元件10具有来自测量对象的优异的导热性 到热电偶21的敏感端部22时,在温度检测时的响应性也优异。 此外,由于热电偶21不直接接触测量对象(废气),所以不可能发生热电偶21的腐蚀和材料劣化。 结果,温度传感器元件10具有优异的耐久性。 因此,温度传感器元件10在温度检测时表现出良好的响应性以及优异的耐久性。