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1. 发明授权

US07447079B2 Method for sensing negative threshold voltages in non-volatile storage using current sensing 有权
标题翻译：使用电流检测来检测非易失性存储器中的负阈值电压的方法
公开(公告)号：US07447079B2
公开(公告)日：2008-11-04
申请号：US11771982
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： Current sensing is performed in a non-volatile storage device for a selected non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.
摘要翻译：在具有负阈值电压的所选择的非易失性存储元件的非易失性存储装置中执行电流感测。控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

2. 发明授权

US07532516B2 Non-volatile storage with current sensing of negative threshold voltages 有权
标题翻译：具有电流检测负阈值电压的非易失性存储器
公开(公告)号：US07532516B2
公开(公告)日：2009-05-12
申请号：US11771987
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.
摘要翻译：一种非易失性存储装置，其中对具有负阈值电压的非易失性存储元件执行电流检测。控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

3. 发明申请

US20080247238A1 METHOD FOR SENSING NEGATIVE THRESHOLD VOLTAGES IN NON-VOLATILE STORAGE USING CURRENT SENSING 有权
标题翻译：使用电流感测感知非挥发性储存中的负压阈值电压的方法
公开(公告)号：US20080247238A1
公开(公告)日：2008-10-09
申请号：US11771982
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
IPC分类号： G11C16/06 , G11C11/4091
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： Current sensing is performed in a non-volatile storage device for a selected non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.
摘要翻译：在具有负阈值电压的所选择的非易失性存储元件的非易失性存储装置中执行电流感测。控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

4. 发明申请

US20080247228A1 NON-VOLATILE STORAGE WITH CURRENT SENSING OF NEGATIVE THRESHOLD VOLTAGES 有权
标题翻译：具有负电压电压的电流感测的非易失性存储
公开(公告)号：US20080247228A1
公开(公告)日：2008-10-09
申请号：US11771987
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu , Nima Mokhlesi , Deepak Chandra Sekar
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.
摘要翻译：一种非易失性存储装置，其中对具有负阈值电压的非易失性存储元件执行电流检测。控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

5. 发明申请

US20080247229A1 NON-VOLATILE STORAGE USING CURRENT SENSING WITH BIASING OF SOURCE AND P-Well 有权
标题翻译：使用电流传感与源极和P阱的非挥发性储存
公开(公告)号：US20080247229A1
公开(公告)日：2008-10-09
申请号：US11771997
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.
摘要翻译：一种非易失性存储装置，其中对非易失性存储元件执行电流检测。对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。感觉可以快速发生，因为等待地面反弹稳定没有延迟。

6. 发明授权

US07489554B2 Method for current sensing with biasing of source and P-well in non-volatile storage 有权
标题翻译：用于在非易失性存储器中源和P阱偏置的电流感测方法
公开(公告)号：US07489554B2
公开(公告)日：2009-02-10
申请号：US11771992
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.
摘要翻译：在用于非易失性存储元件的非易失性存储设备中执行电流检测。对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。感觉可以快速发生，因为等待地面反弹稳定没有延迟。

7. 发明授权

US07539060B2 Non-volatile storage using current sensing with biasing of source and P-Well 有权
标题翻译：使用源偏置和P-Well的电流感测的非易失性存储
公开(公告)号：US07539060B2
公开(公告)日：2009-05-26
申请号：US11771997
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.
摘要翻译：一种非易失性存储装置，其中对非易失性存储元件执行电流检测。对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。感觉可以快速发生，因为等待地面反弹稳定没有延迟。

8. 发明申请

US20080247239A1 METHOD FOR CURRENT SENSING WITH BIASING OF SOURCE AND P-WELL IN NON-VOLATILE STORAGE 有权
标题翻译：用于在非易失性存储器中源和偏心的电流感测的方法
公开(公告)号：US20080247239A1
公开(公告)日：2008-10-09
申请号：US11771992
申请日：2007-06-29
申请人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
发明人： Hao Thai Nguyen , Seungpil Lee , Man Lung Mui , Shahzad Khalid , Hock So , Prashanti Govindu
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C2211/5621 , G11C2211/5623 , G11C2211/5634 , G11C2211/565
摘要： Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.
摘要翻译：在用于非易失性存储元件的非易失性存储设备中执行电流检测。对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。感觉可以快速发生，因为等待地面反弹稳定没有延迟。

9. 发明授权

US07319612B2 Performing multiple read operations via a single read command 有权
标题翻译：通过单个读取命令执行多个读取操作
公开(公告)号：US07319612B2
公开(公告)日：2008-01-15
申请号：US11132353
申请日：2005-05-18
申请人： Edward Babb , Prashanti Govindu , Ahmed T. Sayed
发明人： Edward Babb , Prashanti Govindu , Ahmed T. Sayed
IPC分类号： G11C16/26
CPC分类号： G11C16/32 , G11C7/22
摘要： In one embodiment, the present invention includes a method for performing a plurality of read operations on a nonvolatile array of a memory according to a single read command, and storing data from the plurality of read operations in a volatile array of the memory. In some embodiments, the nonvolatile array may be a flash-based array and the volatile array may be a random access memory.
摘要翻译：在一个实施例中，本发明包括一种用于根据单个读取命令对存储器的非易失性阵列执行多个读取操作并将来自多个读取操作的数据存储在存储器的易失性阵列中的方法。在一些实施例中，非易失性阵列可以是基于闪存的阵列，并且易失性阵列可以是随机存取存储器。

10. 发明申请

US20070229149A1 VOLTAGE REGULATOR HAVING HIGH VOLTAGE PROTECTION 审中-公开
标题翻译：具有高电压保护功能的电压调节器
公开(公告)号：US20070229149A1
公开(公告)日：2007-10-04
申请号：US11278108
申请日：2006-03-30
申请人： Feng Pan , Prashanti Govindu
发明人： Feng Pan , Prashanti Govindu
IPC分类号： G05F1/10
CPC分类号： H02M3/073 , H02M2001/0025 , H02M2001/0032 , H02M2001/0048 , Y02B70/1491 , Y02B70/16
摘要： A high voltage device is connected in a voltage divider and couples a regulated voltage to a comparator for voltage regulation. The high voltage device is biased to conduct a current during regulator operation. When regulator operation is terminated, a switch in the voltage divider is opened to terminate current flow in the voltage divider. While the regulated output voltage can be coupled to the high voltage device when the switch is opened, the device node coupled to the comparator remains at a voltage level determined by the device bias voltage and the turn on voltage, VT, of the device, or V bias −VT, when the switch is opened. In one embodiment, the high voltage device comprises a field effect transistor having sufficient width to accommodate the voltage drop across the source and drain.
摘要翻译：高压器件连接在分压器中，并将稳压电压耦合到比较器进行电压调节。在调节器运行期间，高电压装置被偏置以导通电流。当调节器操作终止时，分压器中的开关打开以终止分压器中的电流。当开关断开时，稳压输出电压可耦合到高电压器件，耦合到比较器的器件节点保持在由器件偏置电压和导通电压V T确定的电压电平， SUB>，或者V bias -V T ，当开关打开时。在一个实施例中，高电压装置包括具有足够宽度的场效应晶体管，以适应源极和漏极两端的电压降。

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