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1. 发明授权

US06899766B2 Diagnosis method for semiconductor processing apparatus 失效
标题翻译：半导体处理装置的诊断方法
公开(公告)号：US06899766B2
公开(公告)日：2005-05-31
申请号：US10781689
申请日：2004-02-20
申请人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
IPC分类号： C23C16/509 , C23C16/52 , H01J37/32 , H01L21/00 , B08B3/12 , C23C16/00 , H05H1/00
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A method of diagnosing a semiconductor processing apparatus for imparting plasma treatment to a sample arranged in a vacuum process chamber, which apparatus includes a plasma generator for generating plasma inside the vacuum process chamber and process gas introducer for introducing a process gas into the vacuum process chamber, includes the steps of imparting mechanical oscillation to the semiconductor processing apparatus and detecting mechanical oscillation generated by the step of imparting mechanical oscillation inside the semiconductor processing apparatus.
摘要翻译：一种诊断用于对设置在真空处理室中的样品施加等离子体处理的半导体处理装置的方法，该装置包括用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室包括以下步骤：向半导体处理装置施加机械振荡，并且检测通过在半导体处理装置内部施加机械振荡的步骤产生的机械振荡。

2. 发明授权

US06866744B2 Semiconductor processing apparatus and a diagnosis method therefor 失效
标题翻译：半导体处理装置及其诊断方法
公开(公告)号：US06866744B2
公开(公告)日：2005-03-15
申请号：US10229072
申请日：2002-08-28
申请人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
IPC分类号： C23C16/509 , C23C16/52 , H01J37/32 , H01L21/00 , H05H1/00 , B08B3/12 , C23C16/00
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber includes a plasma generator for generating plasma inside the vacuum process chamber and a process gas supply for introducing a process gas into the vacuum process chamber. The apparatus further includes an oscillator for imparting mechanical oscillation to the semiconductor processing apparatus, a receiver for detecting mechanical oscillation generated by the oscillator in the semiconductor processing apparatus as a signal, and an analyzer for analyzing the detected signal to diagnose whether the vacuum process chamber is normally assembled.
摘要翻译：用于对布置在真空处理室中的样品施加等离子体处理的半导体处理装置包括：用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室的工艺气体供应。该装置还包括用于向半导体处理装置施加机械振荡的振荡器，用于检测由半导体处理装置中的振荡器产生的机械振荡作为信号的接收器，以及用于分析检测信号以诊断真空处理室正常组装。

3. 发明授权

US07147747B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07147747B2
公开(公告)日：2006-12-12
申请号：US10377826
申请日：2003-03-04
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.
摘要翻译：一种具有处理室的等离子体处理装置，其中待处理物体经受等离子体处理，其包括用于分光计单元的光接收部分，运算单元，数据库，确定单元和装置控制器。确定单元确定处理室中达到调味品终点的状态。执行条件的确定，使得发现通过多变量分析从一批等离子体发射数据得到的一个或多个输出信号与从前一批等离子体发射数据得到的一个或多个输出信号之间的一个或多个差异，平均值确定一批中的差异值，确定一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将该值与预设阈值进行比较。

4. 发明授权

US07147748B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07147748B2
公开(公告)日：2006-12-12
申请号：US10779742
申请日：2004-02-18
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.
摘要翻译：一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置具有其中对基板进行等离子体处理的处理室，受光部，光谱仪单元，运算单元，数据库，确定单元，用于确定终点调味料作为处理室的条件，以及设备控制器。该方法包括以下步骤：将从光谱仪单元输出的多通道信号转换为一批输出信号，发现前一批次的输出信号和输出信号之间的差异，确定一批中的差异的平均值，一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将确定的值与预设阈值进行比较。

5. 发明授权

US06716301B2 Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe 失效
公开(公告)号：US06716301B2
公开(公告)日：2004-04-06
申请号：US09799527
申请日：2001-03-07
申请人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L21306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.

6. 发明授权

US07601240B2 Disturbance-free, recipe-controlled plasma processing system and method 有权
标题翻译：无干扰，配方控制等离子体处理系统和方法
公开(公告)号：US07601240B2
公开(公告)日：2009-10-13
申请号：US11346298
申请日：2006-02-03
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.
摘要翻译：等离子体处理系统包括：基于等离子体处理的配方对样品进行等离子体处理的第一单元;以及用于根据在第一单元中的样品的等离子体处理期间获得的监视值修改配方的第二单元。基于改进的配方，下一个样品在第一单元中进行等离子体处理。

7. 发明申请

US20090120580A1 Disturbance-Free, Recipe-Controlled Plasma Processing System And Method 审中-公开
标题翻译：无干扰，配方控制的等离子体处理系统和方法
公开(公告)号：US20090120580A1
公开(公告)日：2009-05-14
申请号：US12351159
申请日：2009-01-09
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： C23F1/08
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.
摘要翻译：等离子体处理装置包括用于对样品进行多步骤处理操作的真空处理装置，用于在处理操作的至少第一步骤中监视处理参数的传感器，用于将来自传感器的信号压缩到生成装置状态信号，工作结果估计模型单元，其基于装置状态信号和设定的处理结果估计方程估计处理结果;最佳配方计算模型单元，其计算对处理条件的校正，使得处理结果成为目标值，判定最佳配方的有效性的可用配方选择单元。在处理操作的下一步骤中，基于由所选择的可用食谱选择的可用食谱，在最佳条件下进行样品处理。

8. 发明授权

US07343217B2 System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation 有权
标题翻译：使用预测模型方程式监测和控制半导体制造装置的系统
公开(公告)号：US07343217B2
公开(公告)日：2008-03-11
申请号：US11439265
申请日：2006-05-24
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.
摘要翻译：用于处理半导体晶片的半导体处理装置包括用于监视处理状态的多个传感器，处理结果输入单元，用于生成用于预测处理结果的模型方程式的模型方程生成单元，预测处理结果预测单元处理结果，以及处理配方控制单元。此外，提供了一种系统，其包括在远程位置处提供模型方程生成单元，并且通过网络将生成的预测模型方程发送到半导体处理装置，以通过处理配方控制来控制半导体处理装置的处理状态单元。

9. 发明申请

US20070193687A1 Disturbance-free, recipe-controlled plasma processing system and method 审中-公开
标题翻译：无干扰，配方控制等离子体处理系统和方法
公开(公告)号：US20070193687A1
公开(公告)日：2007-08-23
申请号：US11783653
申请日：2007-04-11
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H01L21/306
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.
摘要翻译：一种等离子体处理控制系统包括：等离子体处理装置，用于在真空处理室内产生等离子体，并使用等离子体内的自由基和离子对容纳在真空处理室内的样品进行处理操作;测量仪器，其测量形状处理前的样品，测量处理后的样品的形状的后测量仪器，设置有至少一个用于计算目标过程参数的最佳配方模型的参数改变器，以及用于修改最佳配方模型的模型变换器，从而更新每个蚀刻的配方参数。

10. 发明申请

US20050284574A1 Plasma processing apparatus and processing method 审中-公开
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US20050284574A1
公开(公告)日：2005-12-29
申请号：US11217287
申请日：2005-09-02
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： A plasma processing apparatus includes a vacuum processing vessel constituting a vacuum processing chamber, a processing gas supply unit supplying a processing gas to the vacuum vessel, a plasma generator generating plasma by supplying electromagnetic energy to the vacuum vessel and dissociating the processing gas supplied thereto so as to process a wafer, and a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber. The control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.
摘要翻译：等离子体处理装置包括构成真空处理室的真空处理容器，向真空容器供给处理气体的处理气体供给单元，通过向真空容器供给电磁能并将供给的处理气体解离的等离子体发生器来产生等离子体以及用于控制真空处理室的内表面温度的处理室表面温度控制单元。控制单元基于以下（a）从紧接着的批次处理结束起的空闲时间，（b）紧接着的批次处理的处理能力（c），控制真空处理室的内表面温度）紧接在前的批次处理的处理压力，以及（d）在执行本晶片处理之前，正在处理之前的批次处理的多个晶片。

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