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1. 发明授权

US07709398B2 Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned 失效
标题翻译：使用两种处理气体沉积半导体层的方法和装置，其中一种是预处理的
公开(公告)号：US07709398B2
公开(公告)日：2010-05-04
申请号：US11262874
申请日：2005-10-31
申请人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： H01L21/31
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.
摘要翻译：本发明涉及一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。该层由以固定的化学计量比提供的至少两种材料组分组成，其以第一和第二反应气体的形式引入反应器，并且一部分分解产物形成层，由此供应具有低热活化能的第一反应气体决定层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是由独立的供应能源。第一反应气体通过分布在气体入口元件的表面上的多个开口朝向衬底保持器的方向流动，所述表面位于衬底保持器相对的位置。根据本发明，第二工艺气体在进入处理室之前用等离子体预处理，并且它直接进入衬底保持器的边缘处的处理室，并平行于衬底保持器表面流动。

2. 发明申请

US20100012034A1 Process And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned 审中-公开
标题翻译：用于使用两种工艺气体沉积半导体层的工艺和装置，其中一种是预处理的
公开(公告)号：US20100012034A1
公开(公告)日：2010-01-21
申请号：US12567357
申请日：2009-09-25
申请人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： C23C16/513 , C23C16/46
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.
摘要翻译：提供了一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。该层包括以固定化学计量比提供的至少两种材料组分，其以第一和第二反应气体的形式引入反应器中，并且一部分分解产物形成该层，由此，具有低热活化能的第一反应气体确定了该层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是通过独立供应的能量。

3. 发明申请

US20060121193A1 Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned 失效
标题翻译：使用两种处理气体沉积半导体层的方法和装置，其中一种是预处理的
公开(公告)号：US20060121193A1
公开(公告)日：2006-06-08
申请号：US11262874
申请日：2005-10-31
申请人： Gerhard Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： C23C16/00
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate (5), which is situated inside a process chamber (2) of a reactor (1) while being supported by a substrate holder (4). The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor (1) in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction (11) toward the substrate holder (4) through a multitude of openings (6), which are distributed over a surface (18) of a gas inlet element (3), said surface being located opposite the substrate holder (4). According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber (1), and it enters the process chamber (2) at the edge (19) of the substrate holder (4) directly thereabove and flows parallel to the substrate holder surface.
摘要翻译：本发明涉及一种用于将至少一层（特别是半导体层）沉积在至少一个基板（5）上的方法和装置，所述至少一个基板（5）位于反应器（1）的处理室（2）的内部，同时由衬底保持器（4）。该层由以固定的化学计量比提供的至少两种材料组分组成，其以第一和第二反应气体的形式引入反应器（1）中，并且一部分分解产物形成该层，由此，具有低热活化能的第一反应气体的供应决定了层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是，通过独立的能源供应。第一反应气体通过分布在气体入口元件（3）的表面（18）上的多个开口（6）沿方向（11）流动到衬底保持器（4），所述表面位于相对的衬底保持器（4）。根据本发明，第二工艺气体在进入处理室（1）之前用等离子体预处理，并且在第二工艺气体直接在其上方的基板保持器（4）的边缘（19）处进入处理室（2）到基板保持器表面。

4. 发明授权

US07625448B2 Inlet system for an MOCVD reactor 有权
标题翻译：用于MOCVD反应器的入口系统
公开(公告)号：US07625448B2
公开(公告)日：2009-12-01
申请号：US10591906
申请日：2006-08-28
申请人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
发明人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
IPC分类号： C30B21/02
CPC分类号： C23C16/45568 , C30B25/14 , C30B29/40
摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
摘要翻译：本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽气流。为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。

5. 发明授权

US07128785B2 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates 有权
标题翻译：特别是将结晶层从气相沉积到特别是晶体基底上的方法
公开(公告)号：US07128785B2
公开(公告)日：2006-10-31
申请号：US10685233
申请日：2003-10-14
申请人： Johannes Kaeppeler , Michael Heuken , Rainer Beccard , Gerhard Karl Strauch
发明人： Johannes Kaeppeler , Michael Heuken , Rainer Beccard , Gerhard Karl Strauch
IPC分类号： C30B25/04
CPC分类号： C23C16/45574 , C23C16/301 , C23C16/4481 , C23C16/45565 , C23C16/45568 , C23C16/4584 , C30B25/02 , C30B25/12 , C30B25/14 , C30B29/403 , C30B29/406
摘要： The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH3, AsH3 or PH3 into the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.
摘要翻译：本发明涉及一种用于将特别是结晶层从气相沉积到特别是晶体基底上的装置和方法。该装置包括具有接收至少一个基板的基板支撑件的加热反应室; 一个或多个加热源，其中通过与基底气体一起供给到源的卤素，特别是HCl的化学反应形成气态卤化物，以及金属，例如与源相关联的GA，In，Al，其被输送通过气体入口部分到由衬底支撑件支撑的衬底; 以及用于向反应室供应氢化物，特别是NH 3，AsH 3或PH 3的氢化物供应。多个旋转驱动的衬底支撑件以环形布置设置在衬底支撑载体上，所述源被布置在所述衬底载体的中心。

6. 发明申请

US20080069953A1 Inlet system for an MOCVD reactor 有权
标题翻译：用于MOCVD反应器的入口系统
公开(公告)号：US20080069953A1
公开(公告)日：2008-03-20
申请号：US10591906
申请日：2006-08-28
申请人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
发明人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
IPC分类号： C23C16/00
CPC分类号： C23C16/45568 , C30B25/14 , C30B29/40
摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
摘要翻译：本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽气流。为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。

7. 发明授权

US06983620B2 Method and device for the temperature control of surface temperatures of substrates in a CVD reactor 有权
公开(公告)号：US06983620B2
公开(公告)日：2006-01-10
申请号：US11051748
申请日：2005-02-04
申请人： Johannes Kaeppeler
发明人： Johannes Kaeppeler
IPC分类号： F25D23/12 , C23C16/00 , F27B7/00
CPC分类号： C23C16/46 , C23C16/4584 , C30B25/10 , C30B25/14 , C30B25/16 , C30B25/165
摘要： The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or adjust the temperature variations. According to the invention, an average surface temperature value is calculated, being measured in a particularly optical manner, and the level of the gas cushions is regulated by varying the individually controlled gas flow producing the gas cushions in such a way that the variations of the measured surface temperatures in relation to the average value lies within a predetermined temperature window.

8. 发明授权

US07294207B2 Gas-admission element for CVD processes, and device 失效
标题翻译：用于CVD工艺的气体检测元件和装置
公开(公告)号：US07294207B2
公开(公告)日：2007-11-13
申请号：US10395948
申请日：2003-03-24
申请人： Gerd Strauch , Johannes Kaeppeler , Martin Dauelsberg
发明人： Gerd Strauch , Johannes Kaeppeler , Martin Dauelsberg
IPC分类号： C23C16/455 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/18
CPC分类号： C23C16/45574 , C23C16/45508 , C23C16/45568 , C23C16/45576 , C30B25/14
摘要： The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated susceptor. The first process gas flows through a central line with a central outlet opening and the second process gas flows through a line which is peripheral thereto and which has a peripheral outlet opening that is formed by a gas-permeable gas outlet ring. Said gas outlet ring surrounds a ring-shaped pre-chamber. The invention provides that in order to avoid a parasitic deposition in the area of the peripheral outlet opening, the end section of the gas outlet ring that faces towards the susceptor or the radially outer section of the surface of the gas outlet mechanism surrounding the central outlet opening is cooled by the second process gas according to a truncated cone or revolution hyperboloid shape of a gas guiding surface formed by the pre-chamber back wall.
摘要翻译：本发明涉及一种尤其将结晶层特别沉积在晶体基底上的方法。至少两个工艺气体通过加热的基座上方的气体入口机构彼此分开地引入反应器的处理室。第一工艺气体通过具有中心出口的中心线流动，第二工艺气体流过周边的管线，并且具有由透气气体出口环形成的周边出口。所述气体出口环围绕环形预制室。本发明提供的是，为了避免在周边出口的区域中的寄生沉积，气体出口环的端部朝向基座或气体出口机构的表面的径向外部部分围绕中心出口根据由前室后壁形成的气体导向表面的截头锥形或旋转双曲面形状，通过第二工艺气体冷却开口。

9. 发明申请

US20060272578A1 CVD reactor comprising a photodiode array 有权
标题翻译：包括光电二极管阵列的CVD反应器
公开(公告)号：US20060272578A1
公开(公告)日：2006-12-07
申请号：US11505195
申请日：2006-08-16
申请人： John Mullins , Johannes Kaeppeler , Victor Saywell
发明人： John Mullins , Johannes Kaeppeler , Victor Saywell
IPC分类号： C23C16/00
CPC分类号： C23C16/52 , C23C16/45565 , C23C16/46
摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.
摘要翻译：本发明涉及一种用于在特别是晶体基底上沉积特别是结晶层的装置，所述装置包括一个处理室，该处理室设置在反应器壳体中并且包括用于容纳至少一个基板的基板支架。气体导纳体与衬底保持器相对地布置，所述主体包括面向衬底保持器的气体泄漏表面，并且设置有多个基本上均匀分布的用于工艺气体引入到处理室中的出口。为了改善对表面温度的观察，本发明的装置设置有多个传感器，其布置在出口的后部并分别与相关联的出口对准。

10. 发明申请

US20050214102A1 Loading and unloading apparatus for a coating device 审中-公开
标题翻译：涂装装置的装卸装置
公开(公告)号：US20050214102A1
公开(公告)日：2005-09-29
申请号：US11038305
申请日：2005-01-19
申请人： Holger Juergensen , Johannes Kaeppeler
发明人： Holger Juergensen , Johannes Kaeppeler
IPC分类号： C23C16/44 , B65G1/00 , C23C14/56 , C23C16/458 , C23C16/54 , H01L21/673 , H01L21/683 , H01L21/687
CPC分类号： H01L21/68764 , C23C14/56 , C23C16/4585 , C23C16/54 , H01L21/67754 , H01L21/68707 , H01L21/68771
摘要： The invention relates to a device for loading at least one substrate (1) into a process chamber of a coating unit and unloading the at least one substrate (1) therefrom by means of a gripper (2) of a handling machine. The inventive device comprises a loading plate (3) which can be gripped by the gripper (2) and embodies a storage place for each at least one substrate (1), said storage place being formed by an edge (4) of an opening (5) that is assigned to each substrate (1). The inventive device also comprises a substrate holder (7) that is provided with a pedestal-type substrate support which is adapted to the loading plate (3) and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.
摘要翻译：本发明涉及一种用于将至少一个基板（1）装载到涂覆单元的处理室中并且借助于处理机器的夹持器（2）卸载至少一个基板（1）的装置。本发明的装置包括一个装载板（3），该装载板可被夹持器（2）夹持并且为每个至少一个基板（1）提供储存位置，所述储存位置由开口的边缘（4）形成 5）被分配给每个基板（1）。本发明的装置还包括衬底保持器（7），衬底保持器（7）设置有适于加载板（3）的基座型衬底支撑件，衬底板可以放置在基座支架（7）上，使得衬底的表面的一些扇区支撑件位于距离基板的某一间隙距离处，或者基板以平面方式位于表面的扇形上。

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