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1. 发明申请

US20120256614A1 TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION 审中-公开
标题翻译：限制故障电流传输的技术
公开(公告)号：US20120256614A1
公开(公告)日：2012-10-11
申请号：US13399658
申请日：2012-02-17
申请人： Frank Sinclair , Rajesh Dorai
发明人： Frank Sinclair , Rajesh Dorai
IPC分类号： H02H9/02 , H01F38/00 , H01F27/28 , H01F17/04 , H01F27/24 , B82Y15/00
CPC分类号： H02H9/021 , H01F38/023
摘要： A technique for limiting fault current transmission is disclosed. In one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current. In some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil.
摘要翻译：公开了限制故障电流传输的技术。在一个特定的示例性实施例中，该技术可以利用包括具有至少第一容易轴和硬轴的芯的故障限流器来实现; 以及围绕所述芯缠绕的第一线圈，所述第一线圈构造成承载电流。在一些实施例中，芯的容易轴可以与通过第一线圈传输的电流产生的H场对准。

2. 发明申请

US20090124066A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 有权
公开(公告)号：US20090124066A1
公开(公告)日：2009-05-14
申请号：US12269344
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

3. 发明授权

US08003498B2 Particle beam assisted modification of thin film materials 有权
标题翻译：粒子束辅助修饰薄膜材料
公开(公告)号：US08003498B2
公开(公告)日：2011-08-23
申请号：US12269344
申请日：2008-11-12
申请人： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
摘要翻译：公开了用于处理基板的方法的几个实例。在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体，邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

4. 发明申请

US20090124065A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
标题翻译：细粒束辅助修饰薄膜材料
公开(公告)号：US20090124065A1
公开(公告)日：2009-05-14
申请号：US12269327
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
摘要翻译：公开了用于处理衬底的方法的几个实例。在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

5. 发明授权

US09567691B2 Melt purification and delivery system 有权
标题翻译：熔体净化和输送系统
公开(公告)号：US09567691B2
公开(公告)日：2017-02-14
申请号：US12487119
申请日：2009-06-18
申请人： Peter L. Kellerman , Frank Sinclair , Frederick Carlson , Julian G. Blake
发明人： Peter L. Kellerman , Frank Sinclair , Frederick Carlson , Julian G. Blake
IPC分类号： C01B33/02 , C30B11/00 , C01B33/037 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/60
CPC分类号： C30B11/003 , C01B33/037 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/406 , C30B29/60
摘要： An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.
摘要翻译：公开了一种净化熔体的设备。室中的熔体的第一部分在第一方向上被冷冻。第一部分的一部分在第一方向熔化。熔体的第二部分保持冷冻。熔体从腔室流出，第二部分从腔室中移出。冷冻浓缩物溶解在熔体和第二部分中。第二部分可以是高溶质浓度的塞子。该系统可以结合到具有其它部件例如泵，过滤器或颗粒捕集器的片材成形设备中。

6. 发明授权

US08519353B2 Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam 有权
标题翻译：围绕离子束的中心射线轨迹控制非对称静电透镜的方法和装置
公开(公告)号：US08519353B2
公开(公告)日：2013-08-27
申请号：US12981096
申请日：2010-12-29
申请人： Svetlana Radovanov , Peter L. Kellerman , Frank Sinclair , Robert C. Lindberg
发明人： Svetlana Radovanov , Peter L. Kellerman , Frank Sinclair , Robert C. Lindberg
IPC分类号： H01J1/88 , H01J3/18 , H01J3/38 , G21K1/06
CPC分类号： H01J37/12 , H01J37/15 , H01J37/3171 , H01J2237/121 , H01J2237/151
摘要： A method of controlling deflection of a charged particle beam in an electrostatic lens includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes disposed at unadjusted positions that are symmetric with respect to the central ray trajectory with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes is arranged at adjusted positions that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.
摘要翻译：控制带电粒子束在静电透镜中的偏转的方法包括建立对称静电透镜配置，其包括设置在相对于中心射线轨迹对称的未调整位置的多个电极，其中施加的未调节电压产生对称的场到中心射线轨迹。对应于未调整电压组的对称电场。多个下电极被布置在相对于中心射线轨迹不对称的调整位置处。对于多个下电极获得一组调整的电压，其中所述一组调整的电压对应于在各自调整的非对称位置处的对称电场的各个电位的集合。当带电粒子束通过时，经调整的电压施加到非对称透镜构型。

7. 发明授权

US08460748B2 Patterned magnetic bit data storage media and a method for manufacturing the same 失效
标题翻译：图案化磁位数据存储介质及其制造方法
公开(公告)号：US08460748B2
公开(公告)日：2013-06-11
申请号：US12855399
申请日：2010-08-12
申请人： Frank Sinclair , Vikram Singh
发明人： Frank Sinclair , Vikram Singh
IPC分类号： B05D5/12
CPC分类号： G11B5/012 , B82Y10/00 , G11B5/743
摘要： An improved patterned magnetic bit data storage media and a method for manufacturing the same is disclosed. In one particular exemplary embodiment, the improved patterned magnetic bit data storage media may comprise an active region exhibiting substantially ferromagnetism; and an inactive region exhibiting substantially paramagnetism, the inactive region comprising at least two grains and a grain boundary interposed therebetween, wherein each of the at least two grains contain ferromagnetic material, and wherein the at least two grains are antiferromagnetically coupled.
摘要翻译：公开了一种改进的图案化磁位数据存储介质及其制造方法。在一个特定示例性实施例中，改进的图案化磁位数据存储介质可以包括显示出基本上铁磁性的有源区; 和表现出基本上顺磁性的非活性区域，所述非活性区域包含至少两个晶粒和插入其间的晶界，其中所述至少两个晶粒中的每一个含有铁磁材料，并且其中所述至少两个晶粒是反铁磁耦合的。

8. 发明申请

US20120168622A1 SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM 审中-公开
标题翻译：用于生产质量分析离子束的系统和方法
公开(公告)号：US20120168622A1
公开(公告)日：2012-07-05
申请号：US12981002
申请日：2010-12-29
申请人： Victor M. Benveniste , Frank Sinclair , Svetlana Radovanov , Bon-Woong Koo
发明人： Victor M. Benveniste , Frank Sinclair , Svetlana Radovanov , Bon-Woong Koo
IPC分类号： H01J49/30
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/20 , H01J49/30 , H01J2237/055 , H01J2237/057 , H01J2237/20221
摘要： An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.
摘要翻译：植入系统包括具有一组孔口的离子提取板，其被配置为从离子源提取离子以形成多个子束。磁分析器被配置为提供磁场，以在大体上垂直于子束的主轴的第一方向上偏转子束中的离子。质量分析板包括一组孔，其中具有第一质量/荷率的第一离子种类通过质量分析板传输，具有第二质量/荷重比的第二离子种被质量分析板阻挡。工件保持器构造成在与第一方向垂直的第二方向上相对于质量分析板移动，其中通过质量分析板传输的离子图案在衬底处沿着第一方向形成连续的离子束电流。

9. 发明授权

US08188448B2 Temperature controlled ion source 有权
标题翻译：温度控制离子源
公开(公告)号：US08188448B2
公开(公告)日：2012-05-29
申请号：US12754381
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译：提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。离子源包括具有限定内表面的壁的室。衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。在室壁的内表面的至少一部分和衬垫之间限定间隙。第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

10. 发明申请

US20120088035A1 PLATEN CONTROL 有权
标题翻译：板控制
公开(公告)号：US20120088035A1
公开(公告)日：2012-04-12
申请号：US13270644
申请日：2011-10-11
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
IPC分类号： C23C14/48 , B21C51/00
CPC分类号： H01L21/67109 , H01L21/67288
摘要： A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
摘要翻译：公开了一种用于保持期望的压板平整度的系统和方法。激光系统用于测量压板的平整度。然后改变压板的温度以达到所需的平坦度水平。在一些实施例中，该激光系统仅在建立周期期间使用，然后在正常操作期间使用所得到的期望温度。在其他实施例中，即使在正在处理工件时，也使用激光系统来测量压板的平坦度。

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