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    • 3. 发明申请
    • Image Sensors and Related Methods and Electronic Devices
    • 图像传感器及相关方法和电子设备
    • US20160100113A1
    • 2016-04-07
    • US14851396
    • 2015-09-11
    • Min-Seok OHSeung-Sik KIMYoung-Chan KIMEun-Sub SHIMDong-Joo YANGJi-Won LEEMoo-Sup LIM
    • Min-Seok OHSeung-Sik KIMYoung-Chan KIMEun-Sub SHIMDong-Joo YANGJi-Won LEEMoo-Sup LIM
    • H04N5/369H04N5/378H04N5/376
    • H04N5/3592
    • An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.
    • 提供了包括像素阵列,相关双采样(CDS)单元,模拟数字转换(ADC)单元,控制单元和溢出电源电压控制单元的图像传感器。 像素阵列包括在光电转换周期中产生与入射光对应的累积电荷的至少一个单位像素,并且在读出期间输出基于累积电荷的模拟信号。 CDS单元通过对模拟信号执行CDS操作来产生图像信号。 ADC单元将图像信号转换为数字信号。 控制单元控制像素阵列,CDS单元和ADC单元。 溢出电源电压控制单元控制溢出电源电压在光电转换周期内具有低电压电平,并且在读出期间控制溢出电源电压具有高电压电平。
    • 7. 发明申请
    • BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    • 背面照明图像传感器及其制造方法
    • US20120009720A1
    • 2012-01-12
    • US13177253
    • 2011-07-06
    • Eun-Sub SHIMJung-Chak AhnBum-Suk KimKyung-Ho Lee
    • Eun-Sub SHIMJung-Chak AhnBum-Suk KimKyung-Ho Lee
    • H01L31/0232
    • H01L27/1464H01L27/14625H01L27/14685H01L27/14687
    • A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
    • 一种制造背面照射图像传感器的方法,包括在第一半导体层中形成第一隔离层,使得第一隔离层限定第一半导体层中的像素阵列的像素,在第一半导体层的第一表面上形成第二半导体层 所述第一半导体层在所述第二半导体层中形成第二隔离层,使得所述第二隔离层限定所述第二半导体层中的有源器件区域,通过将杂质注入到所述第二半导体层的第一表面中来形成光检测器和电路器件 所述第二半导体层的第一表面背离所述第一半导体层,在所述第二半导体层的所述第一表面上形成布线层,并且在所述第一半导体层的第二表面上形成滤光器层。