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1. 发明授权

US08895332B2 Light-emitting diode chip with high light extraction and method for manufacturing the same 有权
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US08895332B2
公开(公告)日：2014-11-25
申请号：US12701336
申请日：2010-02-05
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L21/00 , H01L33/00 , H01L33/22 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

2. 发明授权

US08785947B2 Semiconductor substrate for growth of an epitaxial semiconductor device 有权
标题翻译：用于外延半导体器件生长的半导体衬底
公开(公告)号：US08785947B2
公开(公告)日：2014-07-22
申请号：US12648012
申请日：2009-12-28
申请人： Dong-Sing Wuu , Ray-Hua Horng , Chia-Cheng Wu , Po-Rung Lin
发明人： Dong-Sing Wuu , Ray-Hua Horng , Chia-Cheng Wu , Po-Rung Lin
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L21/02491 , H01L21/0242 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.
摘要翻译：半导体衬底包括：基底层; 牺牲层，其形成在基底层上并且包括多个间隔的牺牲膜区域和多个第一通道，每个第一通道限定在两个相邻的牺牲膜区域之间。每个牺牲膜区域具有多个纳米结构和在纳米结构之间限定的多个第二通道。第二通道与第一通道空间通信，并且具有小于第一通道的宽度的宽度。外延层设置在牺牲层上。

3. 发明授权

US08680554B2 Epitaxial structure and method for making the same 有权
标题翻译：外延结构及其制作方法
公开(公告)号：US08680554B2
公开(公告)日：2014-03-25
申请号：US13331530
申请日：2011-12-20
申请人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
发明人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
IPC分类号： H01L21/02
CPC分类号： H01L21/02002 , H01L21/02483 , H01L21/0254 , H01L33/0079
摘要： A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.
摘要翻译：制造外延结构的方法包括：（a）在临时衬底上提供牺牲层，所述牺牲层由氧化镓制成; 和（b）在牺牲层上外延生长外延层单元。

4. 发明授权

US08624262B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08624262B2
公开(公告)日：2014-01-07
申请号：US12903852
申请日：2010-10-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L29/15 , H01L31/0312 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.
摘要翻译：发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。

5. 发明申请

US20120168914A1 EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME 有权
标题翻译：外来结构及其制造方法
公开(公告)号：US20120168914A1
公开(公告)日：2012-07-05
申请号：US13331530
申请日：2011-12-20
申请人： Dong-Sing WUU , Ray-Hua Horng , Tsung-Yen Tsai
发明人： Dong-Sing WUU , Ray-Hua Horng , Tsung-Yen Tsai
IPC分类号： H01L21/20 , H01L29/06
CPC分类号： H01L21/02002 , H01L21/02483 , H01L21/0254 , H01L33/0079
摘要： A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.
摘要翻译：制造外延结构的方法包括：（a）在临时衬底上提供牺牲层，所述牺牲层由氧化镓制成; 和（b）在牺牲层上外延生长外延层单元。

6. 发明授权

US08076689B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08076689B2
公开(公告)日：2011-12-13
申请号：US12540635
申请日：2009-08-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding.
摘要翻译：发光二极管包括外延层，电极，导电构件，光入射层，光反射层，粘合剂和导电永久基板。外延层具有第一和第二表面。电极设置在外延层的第二表面上。导电构件形成在外延层的第一表面上并且彼此间隔开。在不形成导电构件的区域，在外延层的第一表面上形成光入射层。光反射层形成在光入射层和导电构件上，并且具有凹入部分和非凹进部分。粘合剂设置在光反射层的凹进部分中。永久性基板通过粘合剂并通过晶片接合结合到光反射层。

7. 发明申请

US20110024783A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20110024783A1
公开(公告)日：2011-02-03
申请号：US12903852
申请日：2010-10-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L33/60
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.
摘要翻译：发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。

8. 发明申请

US20090078952A1 LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY 有权
标题翻译：具有高导热性的发光芯片器件
公开(公告)号：US20090078952A1
公开(公告)日：2009-03-26
申请号：US12047165
申请日：2008-03-12
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/46
摘要： This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.
摘要翻译：本发明提供了一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能用于通过电光效应产生光。外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。在衬底和外延层结构之间形成导热透明反射层。电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。提供了本发明的芯片装置的制造方法。

9. 发明授权

US07417260B2 Multiple-chromatic light emitting device 失效
标题翻译：多色发光装置
公开(公告)号：US07417260B2
公开(公告)日：2008-08-26
申请号：US11169565
申请日：2005-06-28
申请人： Dong-Sing Wuu , Ray-Hua Horng
发明人： Dong-Sing Wuu , Ray-Hua Horng
IPC分类号： H01L29/20 , H01L29/22
CPC分类号： H01L25/0753 , H01L33/508 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： A light emitting device includes: a first LED that emits a first primary light in a first primary wavelength range when activated; a second LED that emits a second primary light in a second primary wavelength range when activated, the second primary wavelength range differing from the first primary wavelength range; and a semiconductor photon-recycling member associated with the first LED in such a manner to convert a portion of the first primary light into a secondary light in a secondary wavelength range through photon-recycling mechanism and to permit the remainder of the first primary light to pass therethrough. The secondary wavelength range is different from the first and second primary wavelength ranges, thereby enabling the light emitting device to emit a multiple-chromatic light.
摘要翻译：发光装置包括：第一LED，其在被激活时发射在第一主要波长范围内的第一初级光; 第二LED，其在被激活时发射在第二主要波长范围内的第二原色光，所述第二主要波长范围不同于所述第一主要波长范围; 以及与第一LED相关联的半导体光子再循环元件，以这样的方式，通过光子再循环机构将第一原色光的一部分转变成次级波长范围内的次级光，并允许第一主光的剩余部分通过。次级波长范围不同于第一和第二主要波长范围，从而使得发光器件能够发射多色光。

10. 发明申请

US20080194049A1 Method for making a light emitting device 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：US20080194049A1
公开(公告)日：2008-08-14
申请号：US11812418
申请日：2007-06-19
申请人： Dong-Sing Wuu , Ray-Hua Horng , Cheng-Chung Chiang
发明人： Dong-Sing Wuu , Ray-Hua Horng , Cheng-Chung Chiang
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A method for making a light emitting device includes: (a) preparing a chip-mounting board having a conductive surface; (b) mounting a plurality of vertical-feedthrough-LED chips on the conductive surface of the chip-mounting board; (c) forming a photoresist layer that cooperates with the chip-mounting board to enclose the vertical-feedthrough-LED chips; (d) patterning the photoresist layer by photolithography techniques to form a plurality of holes in the photoresist layer in such a manner that each of the holes exposes an electrode of a respective one of the vertical-feedthrough-LED chips; and (e) forming a conductive layer that covers the patterned photoresist layer and the vertical-feedthrough-LED chips.
摘要翻译：制造发光器件的方法包括：（a）制备具有导电表面的芯片安装板; （b）将多个垂直馈通LED芯片安装在芯片安装板的导电表面上; （c）形成与芯片安装板配合以包围垂直馈通LED芯片的光致抗蚀剂层; （d）通过光刻技术图案化光致抗蚀剂层，以在光致抗蚀剂层中形成多个孔，使得每个孔暴露垂直馈通LED芯片中相应一个的电极; 和（e）形成覆盖图案化光致抗蚀剂层和垂直馈通LED芯片的导电层。

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