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1. 发明授权

US11624874B2 Optical scanner 有权
公开(公告)号：US11624874B2
公开(公告)日：2023-04-11
申请号：US17304570
申请日：2021-06-23
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Laurent Mollard , Christel Dieppedale , Stéphane Fanget , Daivid Fowler
IPC分类号： G02B26/10 , G02B6/293
摘要： A scanner is provided with a plurality of elementary scanners each able to scan a different surface by means of a light beam. Each elementary scanner comprises a beam, for example a vibrating beam, on or in which a phase-controlled array is formed, intended to extract, at a face of the beam, a light beam able to be emitted by a light source. At least one beam of one of the elementary scanners, referred to as the first scanner, has, at rest, a deflection different from that of the beams of the other elementary scanners. This arrangement enables the first scanner to scan a surface, referred to the first surface, different from that scanned by the other elementary scanners. The optical scanner according to the present invention makes it possible to cover a relatively large surface while keeping appreciable compactness.

2. 发明授权

US10656332B2 Multi-spectral optical coupler with low receive losses 有权
公开(公告)号：US10656332B2
公开(公告)日：2020-05-19
申请号：US16321147
申请日：2017-07-31
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Simon Plantier , Marco Casale , Daivid Fowler , Christophe Kopp
IPC分类号： G02B6/12 , G02B6/30 , G02B6/34 , G02B6/43
摘要： An optical coupling device for producing an optical coupling between an optical fiber and photonic circuits. The device includes a substrate and at least two coupling stages integrated on the substrate, and: each coupling stage includes a grating coupler configured to implement an optical coupling centered on a respective central wavelength; the multiple grating couplers are superimposed on top of each other, along an axis orthogonal to the substrate plane; at least one of the grating couplers is insensitive to polarization. The device can form, for example, a wide band coupler, wherein each portion of the spectrum is coupled by a coupling stage. As an alternative, such a device can form an emitting and receiving coupler, where emission and reception spectra are each coupled by a respective coupling stage.

3. 发明申请

US20160154180A1 METHOD FOR MANUFACTURING A WAVEGUIDE INCLUDING A SEMI-CONDUCTING JUNCTION 有权
标题翻译：用于制造包括半导体结的波导的方法
公开(公告)号：US20160154180A1
公开(公告)日：2016-06-02
申请号：US14953773
申请日：2015-11-30
申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives
发明人： Maryse FOURNIER , Daivid Fowler , Edouard Grellier , Lorenzo Iotti
IPC分类号： G02B6/134 , G02F1/025 , G02F1/225 , G02B6/136
CPC分类号： G02B6/1347 , G02B6/00 , G02B6/134 , G02B6/1342 , G02B6/136 , G02F1/025 , G02F1/2257 , G02F2001/212 , H01L2223/6627 , H01L2223/6633
摘要： The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).
摘要翻译：本发明涉及一种制造包括半导体结（23）的波导（40）的方法。该方法包括以下步骤：提供包括具有第一导电类型的第一部分（21）的半导体层（20）的支撑件（10）保护第一部分; 在所述半导体层（20）的与所述第一部分（21,221）相邻的第二部分（22）中选择性地注入第二导电型掺杂剂。第二部分（22,222）中的第二导电型掺杂剂的浓度大于第一部分（21,221）中的第一导电类型掺杂剂的浓度。该方法还包括以下步骤：在第一部分（21,221）中扩散第二导电型掺杂剂以在第一部分（21,221）中形成半导体结（23,223），并部分地蚀刻半导体层 20,200），以在第一部分（21,221）中形成波导（40,240），使用第一部分（21,221）的保护，使得半导体结（23,223）被包括在波导（40,240）。

4. 发明授权

US09224891B2 Photodetection device 有权
标题翻译：光检测装置
公开(公告)号：US09224891B2
公开(公告)日：2015-12-29
申请号：US14370592
申请日：2013-01-04
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Daivid Fowler , Roch Espiau de Lamaestre
IPC分类号： H01L31/0232 , H01L29/06 , H01L31/00 , G02B5/18 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/0312
CPC分类号： H01L31/02327 , G02B5/1861 , H01L31/028 , H01L31/0296 , H01L31/02966 , H01L31/0304 , H01L31/03046 , H01L31/0312
摘要： The invention relates to a photodetector for infrared light radiation having a given wavelength (λ), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (λ)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (P), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (L1, L2) and (L3, L4), respectively, the widths (L1) to (L4) being such that none are equal to zero, and that the sum thereof is equal to P and at least L1≠L2 or L3≠L4.
摘要翻译：本发明涉及一种具有给定波长（λ）的红外光辐射的光电检测器，其包括一叠层，该层由构成光电检测区域的部分吸收半导体材料的连续层（11）组成; 对所述波长透明并具有指数ne的材料的间隔层（12）; 和结构化金属反射镜（13），所述反射镜的顶部和所述半导体层之间的距离（g）小于（λ）/ ne，并且所述镜面具有与所述周期性重复对应的轮廓，根据周期（P ）具有由具有宽度（L1，L2）和（L3，L4）的交替的凸起表面（131,132）和槽（133,134）的交替系列限定的基本图案，宽度（L1）至（ L4）使得没有一个等于零，并且其总和等于P，并且至少L1≠L2或L3≠L4。

5. 发明授权

US11835712B2 Optical scanner 有权
公开(公告)号：US11835712B2
公开(公告)日：2023-12-05
申请号：US17304873
申请日：2021-06-28
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Laurent Mollard , Christel Dieppedale , Stéphane Fanget , Daivid Fowler
IPC分类号： G02B6/293 , G02B26/10 , G02B26/08 , H10N30/20 , G02B26/06 , G02B27/00 , G02B6/35
CPC分类号： G02B26/10 , G02B6/29301 , G02B6/29314 , G02B6/3504 , G02B6/3566 , G02B26/06 , G02B26/0858 , G02B26/103 , G02B27/0087 , H10N30/20 , B81B2201/04
摘要： The present invention relates to a scanner provided with a vibratory beam on or in which is formed a phased array intended to extract according to either one of two parallel faces of the beam a light radiation that could be emitted by a light source.

6. 发明授权

US11409181B2 Attenuator photonic circuit with vertical interferometric structure 有权
公开(公告)号：US11409181B2
公开(公告)日：2022-08-09
申请号：US17109238
申请日：2020-12-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Daivid Fowler , Thomas Mang , Basile Meynard
IPC分类号： G02F1/225 , G02F1/01 , G02F1/21
摘要： The invention relates to a photonic circuit for attenuating the amplitude of an optical signal, comprising a Mach-Zehnder interferometer for coupling an input waveguide (14) and an output waveguide (15), said interferometer comprising a modulation section (SM1) which includes a first waveguide (11), a second waveguide (12) and a phase shifter (13) configured to introduce a phase difference between a first optical signal circulating on the first waveguide and a second optical signal circulating on the second waveguide.
The first and second waveguides are arranged in two distinct parallel layers and the phase shifter is a thermo-optical phase shifter arranged to preferentially act on one of the first and second waveguides.

7. 发明授权

US10132998B2 Method for manufacturing a germanium slow light waveguide and photodiode incorporating this slow light waveguide 有权
公开(公告)号：US10132998B2
公开(公告)日：2018-11-20
申请号：US15660183
申请日：2017-07-26
申请人： Commissariat a l'energie atomique et aux energies alternatives
发明人： Karim Hassan , Daivid Fowler , Christophe Kopp , Bertrand Szelag
IPC分类号： G02B6/10 , G02B6/26 , G02B6/13 , G02B6/12 , G02B6/122 , H01L31/0232 , H01L31/105 , H02S40/44
摘要： This method for manufacturing a germanium slow light waveguide includes: producing, in a silicon plate, a cavity the cross section of which, parallel to the plane of the plate, is identical to the horizontal cross section of the slow light waveguide and the bottom of which is located inside the silicon plate; then carrying out an operation of vapor phase epitaxial growth of germanium on the bottom of the cavity until this cavity is completely filled with germanium; and before implementing said epitaxial growth operation, a protective layer is deposited on an upper face of the silicon plate or, after implementing said epitaxial growth operation, the germanium that has grown on said upper face is removed.

8. 发明授权

US09435951B2 Method for manufacturing a waveguide including a semi-conducting junction 有权
标题翻译：一种制造包括半导体结的波导的方法
公开(公告)号：US09435951B2
公开(公告)日：2016-09-06
申请号：US14953773
申请日：2015-11-30
申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives
发明人： Maryse Fournier , Daivid Fowler , Edouard Grellier , Lorenzo Iotti
IPC分类号： H01L21/00 , G02B6/134 , G02B6/136 , G02F1/025 , G02F1/225 , G02F1/21
CPC分类号： G02B6/1347 , G02B6/00 , G02B6/134 , G02B6/1342 , G02B6/136 , G02F1/025 , G02F1/2257 , G02F2001/212 , H01L2223/6627 , H01L2223/6633
摘要： The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).
摘要翻译：本发明涉及一种制造包括半导体结（23）的波导（40）的方法。该方法包括以下步骤：提供包括具有第一导电类型的第一部分（21）的半导体层（20）的支撑件（10）保护第一部分; 在所述半导体层（20）的与所述第一部分（21,221）相邻的第二部分（22）中选择性地注入第二导电型掺杂剂。第二部分（22,222）中的第二导电型掺杂剂的浓度大于第一部分（21,221）中的第一导电类型掺杂剂的浓度。该方法还包括以下步骤：在第一部分（21,221）中扩散第二导电型掺杂剂以在第一部分（21,221）中形成半导体结（23,223），并部分地蚀刻半导体层 20,200），以在第一部分（21,221）中形成波导（40,240），使用第一部分（21,221）的保护，使得半导体结（23,223）被包括在波导（40,240）。

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