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1. 发明申请

US20050099252A1 RF-MEMS switch and its fabrication method 失效
标题翻译： RF-MEMS开关及其制造方法
公开(公告)号：US20050099252A1
公开(公告)日：2005-05-12
申请号：US10902573
申请日：2004-07-30
申请人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
发明人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
IPC分类号： B81B3/00 , B81C1/00 , H01H1/20 , H01H59/00 , H01P1/12 , H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01P1/127
摘要： An inexpensive MEMS switch which stably operates at low voltage and its fabrication method are provided. The switch comprises: a first anchor 7-2-1 formed over a substrate 3; a first spring 7-3-1 connected to the first anchor; an upper electrode 7-1 which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring; a lower electrode 1 formed over the substrate, positioned under the upper electrode; a second spring 7-3-2 connected to the upper electrode; and a second anchor 7-2-2 connected to the second spring. When voltage is applied to between the upper electrode and the lower electrode and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper electrode and the lower electrode are electrically connected with each other. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure to constitute a membrane 7.
摘要翻译：提供了一种在低电压下稳定工作的便宜的MEMS开关及其制造方法。开关包括：形成在衬底3上的第一锚固件7-2-1; 连接到第一锚的第一弹簧7-3-1; 连接到第一弹簧并在衬底上方运动的上电极7-1弹性变形第一弹簧; 形成在所述基板上的位于所述上电极下方的下电极1; 连接到上电极的第二弹簧7-3-2; 以及连接到第二弹簧的第二锚固件7-2-2。当电压施加到上电极和下电极之间并且上电极向下运动时，第二锚与衬底接触。结果，第二弹簧弹性变形。当上电极随后与下电极接触时，上电极和下电极彼此电连接。第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成以构成膜7。

2. 发明授权

US07242273B2 RF-MEMS switch and its fabrication method 失效
标题翻译： RF-MEMS开关及其制造方法
公开(公告)号：US07242273B2
公开(公告)日：2007-07-10
申请号：US10902573
申请日：2004-07-30
申请人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
发明人： Atsushi Isobe , Akihisa Terano , Kengo Asai , Hiroyuki Uchiyama , Hisanori Matsumoto
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01P1/127
摘要： The MEMS switch comprises a first anchor formed over a substrate, a first spring connected to the first anchor, an upper electrode which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring, a lower electrode formed over the substrate, positioned under the upper electrode, a second spring connected to the upper electrode, and a second anchor connected to the second spring. When voltage is applied between the upper and lower electrodes and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper and lower electrodes are electrically connected. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure.
摘要翻译： MEMS开关包括形成在衬底上的第一锚，连接到第一锚的第一弹簧，连接到第一弹簧并在衬底上方进行运动的上电极，使第一弹簧弹性变形，位于上电极下方的基板，连接到上电极的第二弹簧和连接到第二弹簧的第二锚固件。当在上下电极之间施加电压并且上电极向下运动时，使第二锚与基板接触。结果，第二弹簧弹性变形。当上电极随后与下电极接触时，上电极和下电极电连接。第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成。

3. 发明授权

US07554427B2 Thin film bulk acoustic wave resonator and filter, and radio frequency module using them 失效
标题翻译：薄膜体声波谐振器和滤波器，以及使用它们的射频模块
公开(公告)号：US07554427B2
公开(公告)日：2009-06-30
申请号：US11705520
申请日：2007-02-13
申请人： Hisanori Matsumoto , Atsushi Isobe , Kengo Asai
发明人： Hisanori Matsumoto , Atsushi Isobe , Kengo Asai
IPC分类号： H03H9/54 , H01L41/047
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/583 , H03H9/584 , H03H9/585 , H03H9/588 , H03H9/589 , H03H9/605
摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.
摘要翻译：要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

4. 发明申请

US20080169884A1 Thin film bulk acoustic wave resonator structure and filter, and radio-frequency module using them 失效
标题翻译：薄膜体声波谐振器结构和滤波器，以及使用它们的射频模块
公开(公告)号：US20080169884A1
公开(公告)日：2008-07-17
申请号：US11705520
申请日：2007-02-13
申请人： Hisanori Matsumoto , Atsushi Isobe , Kengo Asai
发明人： Hisanori Matsumoto , Atsushi Isobe , Kengo Asai
IPC分类号： H03H9/54
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/583 , H03H9/584 , H03H9/585 , H03H9/588 , H03H9/589 , H03H9/605
摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.
摘要翻译：要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

5. 发明申请

US20070069606A1 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 失效
标题翻译：薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
公开(公告)号：US20070069606A1
公开(公告)日：2007-03-29
申请号：US11602330
申请日：2006-11-21
申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
发明人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H01L41/00
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译：本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

6. 发明授权

US08164399B2 Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
标题翻译：薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器
公开(公告)号：US08164399B2
公开(公告)日：2012-04-24
申请号：US13064564
申请日：2011-03-31
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/205
CPC分类号： H03H9/172 , H03H3/02 , H03H9/564 , H03H9/568 , H03H2003/021 , H03H2009/241
摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.
摘要翻译：薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。压电薄膜的至少一部分介于第一和第二金属电极之间。共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍，两个共振部分的宽度的四分之一或更小。

7. 发明申请

US20090127978A1 Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator 失效
标题翻译：薄膜体声波谐振器，其制造方法和使用谐振器的薄膜体声波谐振器滤波器
公开(公告)号：US20090127978A1
公开(公告)日：2009-05-21
申请号：US12292448
申请日：2008-11-19
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
IPC分类号： H01L41/00 , H04R17/00
CPC分类号： H03H9/173 , H03H3/02 , H03H9/0514 , H03H9/132 , H03H9/172 , H03H2003/021 , Y10T29/42
摘要： The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.
摘要翻译：薄膜体声波谐振器包括由压电层构成的叠层结构，以及插入至少部分压电层的第一和第二电极层，其中第一金属电极分散地形成在面向第二金属电极的电极平面上，并且与层叠结构的共振部相对应地在基板上形成间隙。除了电连接到第一电极层的线电极的区域和与第二电极层电连接的线电极的区域之外，压电层，第一电极层和第二电极层不与绝缘衬底接触但是在一个空心处被支撑。此外，在间隙中形成支撑以支撑层压结构。

8. 发明授权

US07489063B2 Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same 失效
标题翻译：薄膜压电体声波谐振器和射频滤波器使用相同
公开(公告)号：US07489063B2
公开(公告)日：2009-02-10
申请号：US11627858
申请日：2007-01-26
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
IPC分类号： H01L41/08
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/173 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0457 , H03H2003/0471
摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0
摘要翻译：本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

9. 发明申请

US20110148257A1 THIN FILM TUNING-FORK TYPE INFLECTION RESONATOR AND ELECTRIC SIGNAL PROCESSING ELEMENT 失效
标题翻译：薄膜调谐型输入谐振器和电信号处理元件
公开(公告)号：US20110148257A1
公开(公告)日：2011-06-23
申请号：US13036318
申请日：2011-02-28
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H01L41/047 , H01L41/04
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

10. 发明申请

US20080111651A1 Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
标题翻译：薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器
公开(公告)号：US20080111651A1
公开(公告)日：2008-05-15
申请号：US11979905
申请日：2007-11-09
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54 , H03H9/17
CPC分类号： H03H9/172 , H03H3/02 , H03H9/564 , H03H9/568 , H03H2003/021 , H03H2009/241
摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.
摘要翻译：薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。压电薄膜的至少一部分介于第一和第二金属电极之间。共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍，两个共振部分的宽度的四分之一或更小。

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