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1. 发明申请

US20140264695A1 Image Sensor and Method of Manufacturing the Same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20140264695A1
公开(公告)日：2014-09-18
申请号：US14212045
申请日：2014-03-14
申请人： Yun-Ki Lee , Chang-Rok Moon , Duck-Hyung Lee
发明人： Yun-Ki Lee , Chang-Rok Moon , Duck-Hyung Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14601 , H01L27/1463 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface.
摘要翻译：图像传感器包括具有彼此相对的第一表面和第二表面的半导体层，并且包括光电二极管和与第一表面相邻的含氢区域。晶体抗反射层位于半导体层的第一表面上，并且被配置为允许氢原子穿透到半导体层的第一表面。驱动晶体管和导线位于半导体层的第二表面上，滤色器和微透镜位于抗反射层上。含氢区含有与第一表面的缺陷结合的氢原子。

2. 发明申请

US20110198717A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20110198717A1
公开(公告)日：2011-08-18
申请号：US13096355
申请日：2011-04-28
申请人： YUN-KI LEE
发明人： YUN-KI LEE
IPC分类号： H01L31/0232
CPC分类号： H01L27/14636 , H01L27/14683
摘要： An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.
摘要翻译：提供了图像传感器及其制造方法。衬垫区域设置在衬底上。焊盘区域具有比衬底更高的杂质离子浓度。使用基板作为蚀刻掩模选择性地去除焊盘区域，从而形成孔。导电焊盘形成在基板的孔中。

3. 发明授权

US07939362B2 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07939362B2
公开(公告)日：2011-05-10
申请号：US12613930
申请日：2009-11-06
申请人： Yun-Ki Lee
发明人： Yun-Ki Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/14683
摘要： An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.
摘要翻译：提供了图像传感器及其制造方法。衬垫区域设置在衬底上。焊盘区域具有比衬底更高的杂质离子浓度。使用基板作为蚀刻掩模选择性地去除焊盘区域，从而形成孔。导电焊盘形成在基板的孔中。

4. 发明申请

US20110101430A1 CMOS IMAGE SENSOR 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20110101430A1
公开(公告)日：2011-05-05
申请号：US12940410
申请日：2010-11-05
申请人： Yun-Ki LEE
发明人： Yun-Ki LEE
IPC分类号： H01L31/113
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.
摘要翻译：一种CIS及其制造方法，所述CIS包括具有与其相反的第一表面和第二表面的基板，所述基板包括包括光电转换元件和外围电路区域的APS阵列区域; 在所述基板的第一表面上的绝缘中间层，并且包括电连接到所述光电转换元件的金属布线; 在所述基板的第二表面的外围电路区域上的遮光层，暴露所述APS阵列区域，并且包括彼此间隔开的多个金属布线图案，以形成沿着所述APS之间的边界区域的至少一个排水路径阵列区域和外围电路区域; 在所述基板的覆盖所述APS阵列区域和所述遮光层的所述第二表面上的滤色器层; 以及APS阵列区域上的滤色器层上的微透镜。

5. 发明申请

US20100285630A1 Method of manufacturing an image sensor having improved anti-reflective layer 审中-公开
标题翻译：制造具有改进的抗反射层的图像传感器的方法
公开(公告)号：US20100285630A1
公开(公告)日：2010-11-11
申请号：US12662861
申请日：2010-05-07
申请人： Yun-Ki Lee
发明人： Yun-Ki Lee
IPC分类号： H01L31/18 , H01L21/30
CPC分类号： H01L27/1462 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： In a method of manufacturing an image sensor, a photodiode may be formed in a light receiving region of a substrate having a first surface. A conductive wiring may be formed on the first surface of the substrate. After removing a portion of the substrate opposite to the first surface, an anti-reflective layer may be formed on a second surface of the substrate. The second surface may be opposite to the first surface. The anti-reflective layer and the light receiving region may be thermally treated to cure defects including dangling bonds in the substrate and to improve a refraction index of the anti-reflective layer. The image sensor may have an enhanced light transmittance and may produce high-definition images.
摘要翻译：在制造图像传感器的方法中，可以在具有第一表面的基板的光接收区域中形成光电二极管。可以在基板的第一表面上形成导电布线。在去除与第一表面相对的基板的一部分之后，可以在基板的第二表面上形成抗反射层。第二表面可以与第一表面相对。可以对抗反射层和光接收区域进行热处理以固化包括衬底中的悬挂键的缺陷并提高抗反射层的折射率。图像传感器可以具有增强的透光率并且可以产生高清晰度图像。

6. 发明授权

US07803653B2 Method of manufacturing image sensor 有权
标题翻译：图像传感器的制造方法
公开(公告)号：US07803653B2
公开(公告)日：2010-09-28
申请号：US11834818
申请日：2007-08-07
申请人： Gil-sang Yoo , Byung-jun Park , Yun-ki Lee
发明人： Gil-sang Yoo , Byung-jun Park , Yun-ki Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
摘要翻译：一种制造图像传感器的方法包括在半导体衬底的有源像素传感器区域中形成器件隔离区域和半导体衬底的划线路区域中的对准键，使得对准键的深度等于或小于设备隔离区域的深度。该方法还包括在有源像素传感器区域中形成光电转换器，对半导体衬底的后表面进行抛光并使用对准键在与半导体衬底的抛光后表面上的光电转换器对应的位置处形成微透镜。

7. 发明申请

US20100171191A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20100171191A1
公开(公告)日：2010-07-08
申请号：US12649451
申请日：2009-12-30
申请人： Yun-Ki LEE
发明人： Yun-Ki LEE
IPC分类号： H01L31/0216 , H01L31/14
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14629 , H01L27/1464 , H01L27/14645
摘要： An image sensor includes at least one photoelectric conversion device formed in a silicon substrate, at least one lens formed on one side of the photoelectric conversion device and configured to collect light, a dielectric layer formed on the other side of the photoelectric conversion device and a reflective pattern formed on the dielectric layer. The reflective pattern serves as an electrical circuit interconnection and is configured to reflect the light passing through the dielectric layer such that the light is absorbed to the silicon substrate again.
摘要翻译：图像传感器包括形成在硅衬底中的至少一个光电转换装置，形成在光电转换装置的一侧上并构成为收集光的至少一个透镜，形成在光电转换装置的另一侧的电介质层和形成在电介质层上的反射图案。反射图案用作电路互连，并且被配置为反射通过电介质层的光，使得光再次被吸收到硅衬底。

8. 发明申请

US20100167456A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20100167456A1
公开(公告)日：2010-07-01
申请号：US12613930
申请日：2009-11-06
申请人： Yun-Ki Lee
发明人： Yun-Ki Lee
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/14683
摘要： An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.
摘要翻译：提供了图像传感器及其制造方法。衬垫区域设置在衬底上。焊盘区域具有比衬底更高的杂质离子浓度。使用基板作为蚀刻掩模选择性地去除焊盘区域，从而形成孔。导电焊盘形成在基板的孔中。

9. 发明申请

US20090140365A1 Image sensor with back-side illuminated photoelectric converters 审中-公开
标题翻译：具有背面照明光电转换器的图像传感器
公开(公告)号：US20090140365A1
公开(公告)日：2009-06-04
申请号：US12287068
申请日：2008-10-06
申请人： Yun-Ki Lee , Byung-Jun Park
发明人： Yun-Ki Lee , Byung-Jun Park
IPC分类号： H01L31/101
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L27/14603 , H01L27/1464 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： An image sensor includes a circuit substrate, a plurality of isolation regions, a plurality of photoelectric converters, and an insulation layer. The isolation regions are formed in a pixel region having the photoelectric converters formed therein with each photoelectric converter being electrically isolated by the isolation regions. The insulation layer is formed in a pad region with a substantially same depth as the isolation regions. The isolation region and the insulation layer are simultaneously formed for efficient fabrication of the image sensor.
摘要翻译：图像传感器包括电路基板，多个隔离区域，多个光电转换器和绝缘层。隔离区形成在其中形成有光电转换器的像素区域中，每个光电转换器由隔离区电隔离。绝缘层形成在与隔离区域基本相同的深度的焊盘区域中。同时形成隔离区域和绝缘层，以有效地制造图像传感器。

10. 发明申请

US20080070166A1 Image sensor and method of forming the same 审中-公开
标题翻译：图像传感器及其形成方法
公开(公告)号：US20080070166A1
公开(公告)日：2008-03-20
申请号：US11898662
申请日：2007-09-14
申请人： Byung-Jun Park , Chang-Rok Moon , Yun-Ki Lee
发明人： Byung-Jun Park , Chang-Rok Moon , Yun-Ki Lee
IPC分类号： G03C5/00 , G06K9/20
CPC分类号： H01L27/14627 , H01L27/14685
摘要： One example embodiment may include an image sensor including a substrate, and a plurality of microlenses formed on the substrate. Each of the microlenses may include a base lens and a crosslinked overcoating film on a surface of the base lens.
摘要翻译：一个示例实施例可以包括图像传感器，其包括衬底和形成在衬底上的多个微透镜。每个微透镜可以在基底透镜的表面上包括基底透镜和交联的外涂膜。

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