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1. 发明申请

US20130134097A1 METHOD AND APPARATUS FOR TREATING WATER AND WASTEWATER 有权
标题翻译：用于处理水和废水的方法和装置
公开(公告)号：US20130134097A1
公开(公告)日：2013-05-30
申请号：US13474207
申请日：2012-05-17
申请人： Richard OBERHOLTZER , Bruce BROWN , Tim ANDERSON , Daron JOHNSON
发明人： Richard OBERHOLTZER , Bruce BROWN , Tim ANDERSON , Daron JOHNSON
IPC分类号： B01D15/00
CPC分类号： B01D15/00 , B01J39/08 , B01J41/08 , B01J47/012 , B01J47/026 , B01J47/028 , B01J47/04 , B01J49/06 , B01J49/07 , B01J49/09 , B60P7/0815 , B60P7/0892 , C02F1/004 , C02F1/42 , C02F1/76 , C02F2001/422 , C02F2001/425 , C02F2001/427 , C02F2201/004 , C02F2201/008 , C02F2209/001 , C02F2209/003 , C02F2303/16
摘要： The present invention is generally directed to a versatile fluid treatment system which includes: a mobile device; a track system connected to the mobile device; one or more treatment vessels removably attached to the track system, each treatment vessel comprising a treatment material disposed inside the treatment vessel, at least one fluid inlet, and at least one fluid outlet; an input conduit that receives a fluid to be treated, the input conduit in fluid communication with the fluid inlet on the treatment vessel; and an output conduit in fluid communication with the fluid outlet on the treatment vessel, the output conduit receives treated fluid from the treatment vessels via the fluid outlet.
摘要翻译：本发明一般涉及通用流体处理系统，其包括：移动装置; 连接到移动设备的轨道系统; 一个或多个可移除地附接到轨道系统的处理容器，每个处理容器包括设置在处理容器内的处理材料，至少一个流体入口和至少一个流体出口; 接收待处理流体的输入管道，与处理容器上的流体入口流体连通的输入管道; 以及与处理容器上的流体出口流体连通的输出管道，输出管道经由流体出口从处理容器接收经处理的流体。

2. 发明授权

US07001791B2 GaN growth on Si using ZnO buffer layer 失效
标题翻译：使用ZnO缓冲层在Si上生长GaN
公开(公告)号：US07001791B2
公开(公告)日：2006-02-21
申请号：US10691353
申请日：2003-10-22
申请人： Olga Kryliouk , Tim Anderson , Kee Chan Kim
发明人： Olga Kryliouk , Tim Anderson , Kee Chan Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/16 , C30B29/40 , H01L21/02381 , H01L21/02472 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.
摘要翻译：形成III-N族物品的方法包括提供单晶硅衬底，在衬底上沉积氧化锌（ZnO）层，以及在ZnO层上沉积单晶III-N层的步骤。 III-N层的至少一部分在小于600℃的温度下沉积。

3. 发明申请

US20070201005A1 CONFIGURABLE PROJECTION DEVICE 有权
标题翻译：可配置投影设备
公开(公告)号：US20070201005A1
公开(公告)日：2007-08-30
申请号：US11609870
申请日：2006-12-12
申请人： Donald Rhodes , Morten Johansen , Mike Gemelke , Jeff Allison , Tim Anderson
发明人： Donald Rhodes , Morten Johansen , Mike Gemelke , Jeff Allison , Tim Anderson
IPC分类号： G03B21/26
CPC分类号： H04N5/74 , G03B21/26
摘要： A modular projection device. The modular projection device includes a docking interface for selectively coupling the projection device to a content source module that provides the projection device with video content for projection onto a projection surface.
摘要翻译：模块化投影设备。模块化投影设备包括对接接口，用于选择性地将投影设备耦合到内容源模块，该内容源模块为投影设备提供用于投影到投影表面上的视频内容。

4. 发明授权

US06967355B2 Group III-nitride on Si using epitaxial BP buffer layer 有权
标题翻译：使用外延BP缓冲层的Si上的III族氮化物
公开(公告)号：US06967355B2
公开(公告)日：2005-11-22
申请号：US10691055
申请日：2003-10-22
申请人： Olga Kryliouk , Tim Anderson , Omar J. Bchir , Kee Chan Kim
发明人： Olga Kryliouk , Tim Anderson , Omar J. Bchir , Kee Chan Kim
IPC分类号： H01L21/20 , H01L21/205 , H01L27/15 , H01L33/00 , H01L33/12
CPC分类号： H01L33/12 , H01L21/02381 , H01L21/02461 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L33/007
摘要： A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.
摘要翻译：半导体器件及其形成方法包括硅（111）单晶衬底和设置在衬底上的外延磷化磷（BP）层。 III族氮化物半导体外延层设置在BP外延层上。

5. 发明授权

US09126852B2 Mobile system for treatment of water by deionization 有权
标题翻译：通过去离子水处理水的移动系统
公开(公告)号：US09126852B2
公开(公告)日：2015-09-08
申请号：US13474207
申请日：2012-05-17
申请人： Richard Oberholtzer , Bruce Brown , Tim Anderson , Daron Johnson
发明人： Richard Oberholtzer , Bruce Brown , Tim Anderson , Daron Johnson
IPC分类号： B01D15/00 , C02F1/42 , B01J39/08 , B01J41/08 , B01J47/02 , B01J47/04 , B01J49/00 , B01J47/00 , C02F1/76 , B60P7/08 , C02F1/00
CPC分类号： B01D15/00 , B01J39/08 , B01J41/08 , B01J47/012 , B01J47/026 , B01J47/028 , B01J47/04 , B01J49/06 , B01J49/07 , B01J49/09 , B60P7/0815 , B60P7/0892 , C02F1/004 , C02F1/42 , C02F1/76 , C02F2001/422 , C02F2001/425 , C02F2001/427 , C02F2201/004 , C02F2201/008 , C02F2209/001 , C02F2209/003 , C02F2303/16
摘要： The present invention is generally directed to a versatile fluid treatment system which includes: a mobile device; a track system connected to the mobile device; one or more treatment vessels removably attached to the track system, each treatment vessel comprising a treatment material disposed inside the treatment vessel, at least one fluid inlet, and at least one fluid outlet; an input conduit that receives a fluid to be treated, the input conduit in fluid communication with the fluid inlet on the treatment vessel; and an output conduit in fluid communication with the fluid outlet on the treatment vessel, the output conduit receives treated fluid from the treatment vessels via the fluid outlet.
摘要翻译：本发明一般涉及通用流体处理系统，其包括：移动装置; 连接到移动设备的轨道系统; 一个或多个可移除地附接到轨道系统的处理容器，每个处理容器包括设置在处理容器内的处理材料，至少一个流体入口和至少一个流体出口; 接收待处理流体的输入管道，与处理容器上的流体入口流体连通的输入管道; 以及与处理容器上的流体出口流体连通的输出管道，输出管道经由流体出口从处理容器接收经处理的流体。

6. 发明申请

US20060058191A1 Pesticide solvent system for reducing phytotoxicity 审中-公开
标题翻译：用于降低植物毒性的农药溶剂系统
公开(公告)号：US20060058191A1
公开(公告)日：2006-03-16
申请号：US10941765
申请日：2004-09-15
申请人： Mickey Brigance , Greg McManic , Tim Anderson , Mike Pompeo , Wally Thorne
发明人： Mickey Brigance , Greg McManic , Tim Anderson , Mike Pompeo , Wally Thorne
IPC分类号： A01N25/04 , A01N25/16
CPC分类号： A01N25/30 , A01N37/22 , A01N2300/00
摘要： A pesticide composition for applying to soil or plants containing of at least one pesticidally active ingredient, at least one member selected from the group consisting of alkoxylates of C6-C18 alcohol, and mixtures thereof wherein the alkoxylates is with a polyoxyalkylene ranging from POE (1) through POE (20) and/or mixtures of different carbon chain lengths of C6-C18 with POE (1) to up to about POE (20) and POP (1) to POP (10), a counter balanced crop safe solvent, diluent, and an emulsifier.
摘要翻译：一种用于施用至含有至少一种杀虫活性成分的土壤或植物的农药组合物，至少一种选自C 6 -C 18醇的烷氧基化物，及其混合物，其中烷氧基化物与POE（1）至POE（20）的聚氧化烯和/或不同碳链长度的C 6 -C 18的混合物 > POE（1）至约POE（20）和POP（1）至POP（10），反平衡作物安全溶剂，稀释剂和乳化剂。

7. 发明申请

US20100236630A1 CHEMICAL VAPOR DEPOSITION OF CuInxGa1-x(SeyS1-y)2 THIN FILMS AND USES THEREOF 审中-公开
标题翻译： CuInxGa1-x（SeyS1-y）2薄膜的化学气相沉积及其用途
公开(公告)号：US20100236630A1
公开(公告)日：2010-09-23
申请号：US12602203
申请日：2008-05-30
申请人： W.K. KIM , Tim Anderson
发明人： W.K. KIM , Tim Anderson
IPC分类号： H01L31/0272 , B32B9/04 , B32B27/06 , B32B17/06 , B32B15/04 , H01L21/36
CPC分类号： C23C16/305 , Y10T428/31678
摘要： The subject application relates to a chemical vapor (CV) deposition technique to form CuInxGa1-x(SeyS1-y)2, compounds. As a copper source, solid copper can be used with a HCl transport gas and Cu3Cl3 is expected to be a major Cu-containing vapor species in this system, Liquid indium and HCl transport gas are appropriate for the indium source to provide InCl vapor species. Since selenium and sulphur are relatively highly volatile, their vapor can be carried by an inert gas without an additional transport gas, although H2Se and H2S can be used. Each source temperature can be controlled separately so as to provide a sufficient and stable vapor flux. Also provided by the subject application are CV-deposited substrates and devices, such as electronic devices or solar cells, that contain CV-deposited CuInxGa1-x(SeyS1-y)2 substrates.
摘要翻译：本申请涉及形成CuInxGa1-x（SeyS1-y）2化合物的化学蒸气（CV）沉积技术。作为铜源，固体铜可以与HCl输送气体一起使用，并且预期Cu 3 Cl 3在该系统中是主要的含Cu蒸气物质，液体铟和HCl输送气体适合于铟源以提供InCl蒸气物质。由于硒和硫的挥发性相对较高，所以尽管可以使用H2Se和H2S，但它们的蒸气可以通过惰性气体进行运输，而不需要额外的运输气体。可以分别控制每个源温度，以便提供足够和稳定的蒸气通量。由本申请提供的还包括CV沉积的基板和诸如电子器件或太阳能电池的装置，其包含CV沉积的CuInxGa1-x（SeyS1-y）2基板。

8. 发明授权

US07559659B2 Configurable projection device 有权
标题翻译：可配置投影设备
公开(公告)号：US07559659B2
公开(公告)日：2009-07-14
申请号：US11609870
申请日：2006-12-12
申请人： Donald Rhodes , Morten Johansen , Mike Gemelke , Jeff Allison , Tim Anderson
发明人： Donald Rhodes , Morten Johansen , Mike Gemelke , Jeff Allison , Tim Anderson
IPC分类号： G03B21/22 , H04N5/64
CPC分类号： H04N5/74 , G03B21/26
摘要： A modular projection device. The modular projection device includes a docking interface for selectively coupling the projection device to a content source module that provides the projection device with video content for projection onto a projection surface.
摘要翻译：模块化投影设备。模块化投影设备包括对接接口，用于选择性地将投影设备耦合到内容源模块，该内容源模块为投影设备提供用于投影到投影表面上的视频内容。

9. 发明申请

US20050087746A1 Group III-nitride on Si using epitaxial BP buffer layer 有权
公开(公告)号：US20050087746A1
公开(公告)日：2005-04-28
申请号：US10691055
申请日：2003-10-22
申请人： Olga Kryliouk , Tim Anderson , Omar Bchir , Kee Kim
发明人： Olga Kryliouk , Tim Anderson , Omar Bchir , Kee Kim
IPC分类号： H01L21/20 , H01L21/205 , H01L27/15 , H01L33/00 , H01L33/12
CPC分类号： H01L33/12 , H01L21/02381 , H01L21/02461 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L33/007
摘要： A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.

10. 发明授权

US06733591B2 Method and apparatus for producing group-III nitrides 有权
标题翻译：用于生产III族氮化物的方法和装置
公开(公告)号：US06733591B2
公开(公告)日：2004-05-11
申请号：US09735217
申请日：2000-12-12
申请人： Tim Anderson
发明人： Tim Anderson
IPC分类号： C23C1600
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , C30B29/60 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01S5/0218 , H01S5/32341
摘要： The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGa1-x-y N (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). In a specific embodiment, GaN substrates, with low dislocation densities (˜107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.
摘要翻译：本发明涉及一种用于制备具有组成Al x In y Ga 1-xy N（其中0≤x≤1,0<= y <= 1，和0≤x≤1）的大面积单晶III-V族氮化物化合物半导体衬底的方法和装置， = x + y <= 1）。在具体实施方案中，可以生产具有低位错密度（〜10 7 cm 2）的GaN衬底。这些晶体III-V衬底可用于制造激光器和晶体管。根据本发明可以制备III-V族化合物的大面积自立单晶，例如GaN。通过利用由氢化物气相外延（HVPE）提供的快速生长速率并在晶格匹配正交结构氧化物衬底上生长，可以生长出优质的III-V晶体。氧化物基板的实例包括LiGaO 2，LiAlO 2，MgAlScO 4，Al 2 MgO 4和LiNdO 2。本发明涉及用于沉积III-V化合物的方法和装置，其可以在MOVPE和HVPE之间交替，结合两者的优点。特别地，目标混合反应器可以在MOVPE和HVPE之间来回地进行原位处理，使得基板不必在反应器装置之间传输，因此在不同生长技术的性能之间进行冷却。

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