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    • 8. 发明授权
    • Positive resist composition and pattern-forming method
    • 正抗蚀剂组成和图案形成方法
    • US08062826B2
    • 2011-11-22
    • US12058223
    • 2008-03-28
    • Shinichi Kanna
    • Shinichi Kanna
    • G03F7/004G03F7/30
    • G03F7/11G03F7/0045G03F7/0046G03F7/0397G03F7/0758G03F7/2041Y10S430/106Y10S430/111
    • A positive resist composition includes: (A) a resin capable of increasing the solubility in an alkali developing solution by the action of an acid, including: (a1) a repeating unit selected from repeating units represented by specific formulae (a1-1) to (a1-3); (a2) a repeating unit represented by a specific formula (a2); and (a3) a repeating unit selected from repeating units represented by specific formulae (a3-1) to (a3-4); (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a resin including: at least one of a fluorine atom and a silicon atom; and a group selected from specific groups (x) to (z):(x) an alkali-soluble group, (y) a group capable of decomposing by the action of an alkali developing solution to increase the solubility in the alkali developing solution, and (z) a group capable of decomposing by the action of an acid; and (D) a solvent.
    • 正型抗蚀剂组合物包括:(A)能够通过酸的作用增加在碱性显影液中的溶解度的树脂,其包括:(a1)选自由特定式(a1-1)至 (a1-3); (a2)由特定式(a2)表示的重复单元; 和(a3)选自由特定式(a3-1)〜(a3-4)表示的重复单元的重复单元; (B)能够在用光化射线或辐射照射时能够产生酸的化合物,(C)含有氟原子和硅原子中的至少一种的树脂; 和选自碱溶性基团(x)〜(z):( x)中的基团,(y)能够通过碱性显影液的作用分解以提高在碱性显影液中的溶解度的基团, 和(z)能够通过酸的作用分解的基团; 和(D)溶剂。
    • 9. 发明授权
    • Positive resist composition and pattern forming method
    • 正抗蚀剂组成和图案形成方法
    • US08034537B2
    • 2011-10-11
    • US12593353
    • 2008-03-27
    • Toshiaki FukuharaHiromi KandaShinichi Kanna
    • Toshiaki FukuharaHiromi KandaShinichi Kanna
    • G03F7/004G03F7/039
    • G03F7/0045G03F7/0046G03F7/0392G03F7/0397G03F7/0757G03F7/2041Y10S430/106Y10S430/108Y10S430/111
    • A positive photosensitive composition comprises: (A) a resin that has an acid decomposable repeating unit represented by formula (I) and increases its solubility in an alkali developer by action of an acid; (B) a compound that generates an acid in irradiation with actinic light or radiation; (C) a resin that has: at least one of a fluorine atom and a silicon atom; and a group selected from the group consisting of groups (x) to (z); and (D) a solvent: (x) an alkali soluble group, (y) a group which decomposes by action of an alkali developer and increases a solubility of the resin (C) in an alkali developer, and (z) a group which decomposes by action of an acid, wherein, Xa1 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, Ry1 to Ry3 each independently represents an alkyl group or a cycloalkyl group, and at least two of Ry1 to Ry3 may be coupled to form a ring structure, and Z represents a divalent linking group.
    • 正型光敏组合物包含:(A)具有由式(I)表示的可酸分解重复单元并通过酸的作用增加其在碱性显影剂中的溶解度的树脂; (B)在光化或辐射照射下产生酸的化合物; (C)具有氟原子和硅原子中的至少一个的树脂; 和选自基团(x)〜(z))的基团。 和(D)溶剂:(x)碱溶性基团,(y)通过碱显影剂的作用分解并增加树脂(C)在碱性显影剂中的溶解度的基团,和(z) 通过酸的作用分解,其中,Xa1表示氢原子,烷基,氰基或卤素原子,Ry1〜Ry3各自独立地表示烷基或环烷基,Ry1〜Ry3中的至少两个可以 偶联形成环结构,Z表示二价连接基团。
    • 10. 发明授权
    • Pattern forming method
    • 图案形成方法
    • US07700260B2
    • 2010-04-20
    • US11656527
    • 2007-01-23
    • Shinichi KannaHaruki InabeHiromi Kanda
    • Shinichi KannaHaruki InabeHiromi Kanda
    • G03F7/00G03F7/004
    • G03F7/0046G03F7/0397G03F7/2041
    • A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.
    • 使用正性抗蚀剂组合物的图案形成方法包括:(A)能够在酸的作用下增加其在碱性显影剂中的溶解度的无氟树脂; (B)能够在用光化射线或辐射照射时能产生酸的化合物; (C)具有选自(X)碱溶性基团(XI)中的至少一种基团的含氟树脂,(XI)能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度(C )和(XII)能够在酸的作用下分解并增加树脂(C)在碱性显影剂中的溶解度的基团; 和(D)溶剂,所述方法包括:(i)将正性抗蚀剂组合物施加到基材以形成抗蚀剂涂层的步骤; (ii)通过浸没液体使抗蚀剂涂层曝光的步骤; (iii)去除残留在抗蚀剂涂层上的浸渍液体的步骤; (iv)加热抗蚀剂涂层的步骤; 和(v)开发抗蚀剂涂层的步骤。