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1. 发明授权

US08585874B2 Method of preparing positive active material for lithium battery 有权
标题翻译：锂电池正极活性物质的制备方法
公开(公告)号：US08585874B2
公开(公告)日：2013-11-19
申请号：US12625646
申请日：2009-11-25
申请人： Kyung Yoon Chung , Byung Won Cho , Seong-rae Lee , Hwa Young Lee , Ji-Ae Choi
发明人： Kyung Yoon Chung , Byung Won Cho , Seong-rae Lee , Hwa Young Lee , Ji-Ae Choi
IPC分类号： C23C14/34
CPC分类号： H01M4/485 , C23C14/083 , C23C14/3414 , H01M4/131 , H01M4/1391 , H01M4/525 , H01M4/661 , H01M10/052
摘要： Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.
摘要翻译：公开了一种锂电池正极活性物质的制备方法。该方法包括：在衬底（1）上的电极上沉积正极活性材料; 并将金属屑放在金属氧化物靶上并进行溅射工艺，从而在正极活性物质（2）上沉积混合的金属氧化物。另一方面，该方法包括：制备电极活性材料; 制备包括电极活性材料的前体溶液; 并将前体溶液印刷在基材上，并在80-120℃的温度下蒸发溶剂。

2. 发明申请

US20110056824A1 METHOD OF PREPARING POSITIVE ACTIVE MATERIAL FOR LITHIUM BATTERY 有权
标题翻译：制备锂电池正极活性材料的方法
公开(公告)号：US20110056824A1
公开(公告)日：2011-03-10
申请号：US12625646
申请日：2009-11-25
申请人： Kyung Yoon CHUNG , Byung Won CHO , Seong-rae LEE , Hwa Young LEE , Ji-Ae CHOI
发明人： Kyung Yoon CHUNG , Byung Won CHO , Seong-rae LEE , Hwa Young LEE , Ji-Ae CHOI
IPC分类号： C23C14/34 , B05D5/12
CPC分类号： H01M4/485 , C23C14/083 , C23C14/3414 , H01M4/131 , H01M4/1391 , H01M4/525 , H01M4/661 , H01M10/052
摘要： Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.
摘要翻译：公开了一种锂电池正极活性物质的制备方法。该方法包括：在衬底（1）上的电极上沉积正极活性材料; 并将金属屑放在金属氧化物靶上并进行溅射工艺，从而在正极活性物质（2）上沉积混合的金属氧化物。另一方面，该方法包括：制备电极活性材料; 制备包括电极活性材料的前体溶液; 并将前体溶液印刷在基材上，并在80-120℃的温度下蒸发溶剂。

3. 发明授权

US06960397B2 Magnetoresistance device 有权
标题翻译：磁阻装置
公开(公告)号：US06960397B2
公开(公告)日：2005-11-01
申请号：US10765970
申请日：2004-01-29
申请人： Seong Rae Lee , Chul Min Choi , Jong Soo Kim , Jin Oh Song , Sung Min Park , Dong Hwan Kim
发明人： Seong Rae Lee , Chul Min Choi , Jong Soo Kim , Jin Oh Song , Sung Min Park , Dong Hwan Kim
IPC分类号： G01R33/09 , G11B5/39 , G11C11/14 , H01F10/30 , H01F10/32 , H01L43/08 , G11B5/33 , B32B9/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3909 , G11B2005/3996 , G11C11/14 , H01F10/30 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T428/32
摘要： Provided is a magnetoresistance device. The device includes a substrate, a lower layer formed on the substrate, and a magnetoresistance structure formed on the lower layer, and the lower layer is formed of amorphous ZrxAl1-x (0
摘要翻译：提供了一种磁阻器件。该器件包括衬底，形成在衬底上的下层和形成在下层上的磁阻结构，下层由无定形Zr 1 Al 1-x x形成，（0 1 （0 1

4. 发明授权

US09705075B2 Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same 有权
公开(公告)号：US09705075B2
公开(公告)日：2017-07-11
申请号：US14403058
申请日：2012-06-26
申请人： Sang Ho Lim , Tae Young Lee , Seong Rae Lee , Dong-Su Son
发明人： Sang Ho Lim , Tae Young Lee , Seong Rae Lee , Dong-Su Son
IPC分类号： H01L43/10 , G01R33/09 , H01L43/02 , H01L43/12 , H01F10/32 , H01F10/12
CPC分类号： H01L43/10 , G01R33/098 , G11C11/161 , H01F10/123 , H01F10/3286 , H01L43/02 , H01L43/12
摘要： The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane magnetic anisotropy to be formed by heat treatment so as to reduce the critical current density required for magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.

5. 发明申请

US20150115379A1 COBALT (CO) AND PLATINUM (PT)-BASED MULTILAYER THIN FILM HAVING INVERTED STRUCTURE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：具有反相结构的钴（CO）和铂（PT） - 多层膜薄膜及其制造方法
公开(公告)号：US20150115379A1
公开(公告)日：2015-04-30
申请号：US14403058
申请日：2012-06-26
申请人： Sang Ho Lim , Tae Young Lee , Seong Rae Lee , Dong-Su Son
发明人： Sang Ho Lim , Tae Young Lee , Seong Rae Lee , Dong-Su Son
IPC分类号： H01L43/10 , H01L43/02 , H01L43/12
CPC分类号： H01L43/10 , G01R33/098 , G11C11/161 , H01F10/123 , H01F10/3286 , H01L43/02 , H01L43/12
摘要： The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane magnetic anisotropy to be formed by heat treatment so as to reduce the critical current density required for magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.
摘要翻译：本发明涉及具有新颖结构和垂直磁各向异性的钴（Co）和铂（Pt）基多层薄膜及其制造方法。更具体地，本发明涉及具有垂直磁各向异性（PMA）的钴和铂基多层薄膜，其包括交替沉积在衬底上的薄钴层和薄铂层，并且具有倒置结构，其中，薄的钴层的厚度大于薄铂层的制造方法。钴和铂基多层薄膜具有磁性薄层的厚度大于非磁性薄层的厚度的新结构。通过根据层的厚度比控制垂直磁各向异性能，可以容易地将多层薄膜作为自由层和钉扎层施加在磁性隧道结中。此外，多层薄膜具有优异的热稳定性，因此即使在经受热处理工艺之后也能保持其PMA能量密度。此外，通过热处理能够形成精细的面内磁各向异性，从而降低磁化切换所需的临界电流密度。因此，可以有利地用于高性能和高密度的MRAM。

6. 发明授权

US07193823B2 Magnetoresistive device exhibiting small and stable bias fields independent of device size variation 有权
标题翻译：磁阻器件显示出小且稳定的偏置场，与器件尺寸变化无关
公开(公告)号：US07193823B2
公开(公告)日：2007-03-20
申请号：US10452867
申请日：2003-06-02
申请人： Young Keun Kim , Jeong-Suk Park , Seong-Rae Lee
发明人： Young Keun Kim , Jeong-Suk Park , Seong-Rae Lee
IPC分类号： G11B5/39 , G11C11/15
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/313 , G11B5/3932 , G11B5/3967 , G11B2005/0008 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： The present invention relates generally to the magnetic information storage technology, and particularly, to magnetic recording disc drives including a sensor having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure or magnetic random access memory device including a magnetic memory element(corresponding to a capacitor of DRAM) having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure. More particularly, the present invention relates to a spin valve magnetoresistive structure employed in the sensor of magnetic recording disc drive or tunnel junction magnetoresistive structure employed in the magnetic storage element of magnetic random access memory device.
摘要翻译：本发明一般涉及磁信息存储技术，特别涉及包括具有基于巨磁阻（GMR）的自旋阀结构或基于隧道磁阻（TMR）的隧道结磁阻结构或磁随机存取的传感器的磁记录盘驱动器存储器件包括具有基于巨磁阻（GMR）的自旋阀结构或基于隧道磁阻（TMR）的隧道结磁阻结构的磁存储元件（对应于DRAM的电容器）。更具体地，本发明涉及在磁性随机存取存储器件的磁存储元件中采用的磁记录盘驱动器或隧道结磁阻结构的传感器中使用的自旋阀磁阻结构。

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