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    • 1. 发明申请
    • PROCESSED SILICON WAFER, SILICON CHIP, AND METHOD AND APPARATUS FOR PRODUCTION THEREOF
    • 加工硅砂,硅芯片及其制造方法及装置
    • US20120012170A1
    • 2012-01-19
    • US12838695
    • 2010-07-19
    • Sean Erik FOSSKrister MANGERSNES
    • Sean Erik FOSSKrister MANGERSNES
    • H01L31/0376
    • H01L31/1804H01L31/0682Y02E10/547Y02P70/521
    • A silicon crystal wafer or chip, and a method for processing a substantially pure or semiconductor level doped silicon crystal wafer or chip for adapting the wafer or chip for laser beam ablation of an electrically insulating surface layer carried on the wafer or chip. A layer of amorphous silicon of a thickness substantially larger than the thickness of the naturally obtained oxide layer, the amorphous silicon being a substantially pure or semiconductor level doped grade amorphous silicon, is produced on top of a substantially clean surface of the silicon crystal wafer or chip. A layer of the electrically insulating surface layer being substantially transparent to an optical wavelength of a laser beam that is extensively absorbed in the layer of amorphous silicon, is produced on the layer of amorphous silicon. The surface of the silicon crystal wafer or chip is irradiated by a pulsed laser beam of an optical energy fluence and a pulse duration adapted to melt and evaporize the layer of amorphous silicon in an area corresponding to a footprint of the laser beam, so as to ablate a corresponding area of the electrically insulating layer.
    • 一种硅晶片或芯片,以及用于处理基本上纯的或半导体级掺杂的硅晶片或芯片的方法,用于使晶片或芯片适配于晶片或芯片上承载的电绝缘表面层的激光束烧蚀。 在硅晶片的基本上清洁的表面的顶部上产生厚度基本上大于天然获得的氧化物层的厚度的非晶硅层,非晶硅是基本上纯的或半导体级掺杂级的非晶硅,或者 芯片。 在非晶硅层上产生电绝缘表面层对广泛吸收在非晶硅层中的激光束的光波长基本透明的层。 硅晶片或芯片的表面由光能量密度脉冲激光束和脉冲持续时间照射,该脉冲激光束适于在对应于激光束的占地面积的区域中熔化和蒸发非晶硅层,以便 消除电绝缘层的相应区域。
    • 2. 发明授权
    • Method for producing a solar cell
    • 太阳能电池的制造方法
    • US09425333B2
    • 2016-08-23
    • US13882051
    • 2011-10-25
    • Krister MangersnesSean Erik Foss
    • Krister MangersnesSean Erik Foss
    • H01L31/0224C23C14/04
    • H01L31/022425C23C14/046H01L31/022441Y02E10/50
    • A device including a surface layer of a selected material in a predetermined pattern on a substrate surface. A groove or ridge arranged in the substrate surface includes a bottom or top face, respectively, and at least one side face sloping relative to the bottom or top face. The surface layer is deposited on a part of the substrate including the groove or ridge by vacuum chamber sputtering the selected material from a sputtering source while moving the substrate past the sputtering source in a direction substantially perpendicular to a sputtering main lobe direction and with a normal to the substrate surface substantially in a predefined angle with the main lobe direction. By uniformly etching away surface layer material deposited on the substrate by the sputtering until freeing a substantial part of the side face, the predetermined pattern becomes defined substantially by the bottom face or the top face.
    • 一种在衬底表面上包括预定图案中所选材料的表面层的器件。 布置在基板表面中的凹槽或脊分别包括底面或顶面,以及相对于底面或顶面倾斜的至少一个侧面。 通过真空室将表面层沉积在包括沟槽或脊的衬底的一部分上,从溅射源溅射所选择的材料,同时沿着基本上垂直于溅射主瓣方向的方向移动衬底经过溅射源,并且与正常 基本上与主瓣方向成预定的角度。 通过通过溅射均匀地蚀刻沉积在衬底上的表面层材料,直到释放侧面的大部分,预定图案基本上由底面或顶面限定。
    • 4. 发明申请
    • METHOD FOR PRODUCING A SOLAR CELL
    • 生产太阳能电池的方法
    • US20130291937A1
    • 2013-11-07
    • US13882051
    • 2011-10-25
    • Krister MangersnesSean Erik Foss
    • Krister MangersnesSean Erik Foss
    • H01L31/0224
    • H01L31/022425C23C14/046H01L31/022441Y02E10/50
    • A device including a surface layer of a selected material in a predetermined pattern on a substrate surface. A groove or ridge arranged in the substrate surface includes a bottom or top face, respectively, and at least one side face sloping relative to the bottom or top face. The surface layer is deposited on a part of the substrate including the groove or ridge by vacuum chamber sputtering the selected material from a sputtering source whilst moving the substrate past the sputtering source in a direction substantially perpendicular to a sputtering main lobe direction and with a normal to the substrate surface substantially in a predefined angle with the main lobe direction. By uniformly etching away surface layer material deposited on the substrate by the sputtering until freeing a substantial part of the side face, the predetermined pattern becomes defined substantially by the bottom face or the top face.
    • 一种在衬底表面上包括预定图案中所选材料的表面层的器件。 布置在基板表面中的凹槽或脊分别包括底面或顶面,以及相对于底面或顶面倾斜的至少一个侧面。 通过真空室将表面层沉积在包括沟槽或脊的衬底的一部分上,从溅射源溅射所选择的材料,同时沿基本上垂直于溅射主瓣方向的方向移动衬底经过溅射源并且与正常 基本上与主瓣方向成预定的角度。 通过通过溅射均匀地蚀刻沉积在衬底上的表面层材料,直到释放侧面的大部分,预定图案基本上由底面或顶面限定。