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1. 发明授权

US07939367B1 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate 有权
标题翻译：在粘合到化合物半导体衬底上的层间生长粘附金刚石层的方法
公开(公告)号：US07939367B1
公开(公告)日：2011-05-10
申请号：US12338783
申请日：2008-12-18
申请人： Firooz Nasser-Faili , Niels Christopher Engdahl
发明人： Firooz Nasser-Faili , Niels Christopher Engdahl
IPC分类号： H01L21/00
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/02274 , H01L21/02304
摘要： The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is preferably a dielectric, such as silicon nitride, silicon carbide, aluminum nitride or amorphous silicon, to name some primary examples. The typical thickness of the adhesion layer is one micrometer or less. The resulting stack of layers, (e.g. substrate layer, adhesion layer and diamond layer) is structurally free of plastic deformation and the diamond layer is well adherent to the dielectric adhesion layer such that it can be processed further, such as by increasing the thickness of the diamond layer to a desired level, or by subjecting it to additional thin film fabrication process steps. In addition to preventing plastic deformation of the layer stack, the process also reduces the formation of soot during the CVD process. The reduction of soot allows for better adhesion between the adhesion layer and diamond layer of the layer stack.
摘要翻译：本发明是通过化学气相沉积（CVD）和通过该方法制备的制品在衬底上生长关键粘附金刚石层的方法。衬底可以是涂覆有粘合层的化合物半导体。粘附层优选为诸如氮化硅，碳化硅，氮化铝或非晶硅的电介质，以列举一些主要实例。粘合层的典型厚度为1微米或更小。所得到的层叠层（例如，基底层，粘合层和金刚石层）在结构上没有塑性变形，并且金刚石层与电介质粘合层良好粘附，使得其可进一步加工，例如通过增加厚度金刚石层到所需的水平，或者通过使其进一步的薄膜制造工艺步骤。除了防止层叠体的塑性变形之外，该过程还减少了CVD工艺期间烟灰的形成。烟灰的减少允许粘附层和层叠层的金刚石层之间的更好的粘附。

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