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1. 发明授权

US5442198A Non-single crystal semiconductor device with sub-micron grain size 失效
标题翻译：具有亚微米粒度的非单晶半导体器件
公开(公告)号：US5442198A
公开(公告)日：1995-08-15
申请号：US189498
申请日：1994-01-31
申请人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
发明人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L31/105 , H04N1/031 , H01L21/00 , H01L29/161 , H01L29/34
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78675 , H01L31/1055 , H04N1/0313 , H04N1/0316 , Y10S257/905
摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.
摘要翻译：在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍至4倍的范围内，所述平均直径为250安培-8000安培，所述膜厚度为500安培-2000安。半导体膜（2'）中的氧的密度小于2×10 19 / cm 3。具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。

2. 发明授权

US5576222A Method of making a semiconductor image sensor device 失效
标题翻译：制造半导体图像传感器装置的方法
公开(公告)号：US5576222A
公开(公告)日：1996-11-19
申请号：US324737
申请日：1994-10-18
申请人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
发明人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
IPC分类号： H01L31/20 , H01L27/14 , H01L21/336 , H01L21/71 , H01L27/01
CPC分类号： H01L31/20 , Y02E10/50
摘要： An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.
摘要翻译：图像传感器（10）具有基板（1），具有放置在所述基板（1）上的源极区域和漏极区域的有源层（3'），放置在所述有源层上的栅极绝缘层（4'），和栅极绝缘层（4'）上的栅电极层（5'）。有源层（3'）通过以下步骤制造：通过低压CVD法使用乙硅烷气体（Si 2 H 6）生成非晶硅层，并且在500-650℃下在氮气中退火所述层4-50小时大气层。栅极绝缘层（4'）通过在900〜-1100℃的高温下氧化活性层的表面而产生。高温下的氧化过程改善了退火过程并改善了活性层。因此，获得具有均匀特性的图像传感器，具有提高的生产率。

3. 发明授权

US5298455A Method for producing a non-single crystal semiconductor device 失效
标题翻译：非单晶半导体器件的制造方法
公开(公告)号：US5298455A
公开(公告)日：1994-03-29
申请号：US825552
申请日：1992-01-27
申请人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
发明人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L31/105 , H04N1/031 , H01L21/00 , H01L21/02
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78675 , H01L31/1055 , H04N1/0313 , H04N1/0316 , Y10S257/905
摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.
摘要翻译：在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍和4倍之间的范围内，所述平均直径为250（Aangstroem）-8000（Aangstroem），所述膜厚度为500（Aangstroem） -2000（Aangstroem）。半导体膜（2'）中的氧的密度小于2×1019 / cm3。具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。

4. 发明授权

US08319419B2 Organic EL display apparatus 有权
标题翻译：有机EL显示装置
公开(公告)号：US08319419B2
公开(公告)日：2012-11-27
申请号：US12813132
申请日：2010-06-10
申请人： Mitsufumi Kodama , Keisuke Watanabe , Daisuke Takeuchi , Yuuki Aburakawa
发明人： Mitsufumi Kodama , Keisuke Watanabe , Daisuke Takeuchi , Yuuki Aburakawa
IPC分类号： H01L51/52 , H01L51/50
CPC分类号： H01L51/5203 , H01L27/326 , H01L27/3281 , H01L51/5225 , H01L2251/5323
摘要： A display apparatus comprises a display unit which has a plurality of organic EL elements two-dimensionally arranged to define pixels. Each organic EL element comprises a first electrode, an organic EL layer, and a second electrode laminated in order on an optically transparent substrate. One of the first electrode and second electrode is an optically transparent electrode, while the other is a non-optically transparent electrode. The non-optically transparent electrode is disposed to exist only in part of each pixel, as viewed from vertically above (for example, the width of the electrode is made smaller than the width of a pixel). In this way, the display unit can transmit light through portions of the pixels in which the non-optically transparent electrodes are not disposed. Preferably, the non-optically transparent electrode includes a mirror surface opposite to the organic EL layer.
摘要翻译：显示装置包括具有二维排列以限定像素的多个有机EL元件的显示单元。每个有机EL元件包括依次层叠在光学透明基板上的第一电极，有机EL层和第二电极。第一电极和第二电极之一是光学透明电极，而另一个是非光学透明电极。非光学透明电极被设置为仅从垂直方向观察每个像素的一部分（例如，使电极的宽度小于像素的宽度）。以这种方式，显示单元可以透过不配置非光学透明电极的像素部分。优选地，非光学透明电极包括与有机EL层相对的镜面。

5. 发明授权

US08159132B2 Organic electro-luminescense display apparatus 有权
标题翻译：有机电发光显示装置
公开(公告)号：US08159132B2
公开(公告)日：2012-04-17
申请号：US12786977
申请日：2010-05-25
申请人： Mitsufumi Kodama , Toshiaki Maruoka , Shigeyuki Ishiguro , Toshio Hayakawa , Yosuke Mizutani
发明人： Mitsufumi Kodama , Toshiaki Maruoka , Shigeyuki Ishiguro , Toshio Hayakawa , Yosuke Mizutani
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L51/5246 , H01L27/3276 , H01L27/3288
摘要： An organic EL display apparatus includes a display unit having a plurality of organic EL elements two-dimensionally arranged on a substrate, where the organic EL elements provide pixels, a sealing plate configured to be adhered to the substrate with an adhesive to cover the display unit, and a plurality of lead wires disposed on the substrate such that the lead wires are drawn outward from the display unit to the outside of the sealing plate. A linear bank is formed along an adhesion zone defined on the substrate to extend across the lead wires in a region where these lead wires are disposed. The sealing plate has its periphery adhered to the adhesion zone on the substrate along the adhesion zone on the substrate.
摘要翻译：有机EL显示装置包括具有二维排列在基板上的有机EL元件的多个有机EL元件的显示单元，其中有机EL元件提供像素;密封板，被配置为用粘合剂粘附到基板上以覆盖显示单元以及设置在所述基板上的多根引线，使得所述引线从所述显示单元向外拉出到所述密封板的外部。线性组沿着限定在衬底上的粘附区形成，以在布置这些引线的区域中延伸穿过引线。密封板的周边沿着基板上的粘附区域附着在基板上的粘合区域上。

6. 发明申请

US20100314616A1 ORGANIC EL DISPLAY APPARATUS 有权
标题翻译：有机EL显示装置
公开(公告)号：US20100314616A1
公开(公告)日：2010-12-16
申请号：US12813132
申请日：2010-06-10
申请人： Mitsufumi KODAMA , Keisuke WATANABE , Daisuke TAKEUCHI , Yuuki ABURAKAWA
发明人： Mitsufumi KODAMA , Keisuke WATANABE , Daisuke TAKEUCHI , Yuuki ABURAKAWA
IPC分类号： H01L51/52
CPC分类号： H01L51/5203 , H01L27/326 , H01L27/3281 , H01L51/5225 , H01L2251/5323
摘要： A display apparatus comprises a display unit which has a plurality of organic EL elements two-dimensionally arranged to define pixels. Each organic EL element comprises a first electrode, an organic EL layer, and a second electrode laminated in order on an optically transparent substrate. One of the first electrode and second electrode is an optically transparent electrode, while the other is a non-optically transparent electrode. The non-optically transparent electrode is disposed to exist only in part of each pixel, as viewed from vertically above (for example, the width of the electrode is made smaller than the width of a pixel). In this way, the display unit can transmit light through portions of the pixels in which the non-optically transparent electrodes are not disposed. Preferably, the non-optically transparent electrode includes a mirror surface opposite to the organic EL layer.
摘要翻译：显示装置包括具有二维排列以限定像素的多个有机EL元件的显示单元。每个有机EL元件包括依次层叠在光学透明基板上的第一电极，有机EL层和第二电极。第一电极和第二电极之一是光学透明电极，而另一个是非光学透明电极。非光学透明电极被设置为仅从垂直方向观察每个像素的一部分（例如，使电极的宽度小于像素的宽度）。以这种方式，显示单元可以透过不配置非光学透明电极的像素部分。优选地，非光学透明电极包括与有机EL层相对的镜面。

7. 发明申请

US20100301743A1 ORGANIC EL DISPLAY APPARATUS 有权
标题翻译：有机EL显示装置
公开(公告)号：US20100301743A1
公开(公告)日：2010-12-02
申请号：US12786977
申请日：2010-05-25
申请人： Mitsufumi KODAMA , Toshiaki Maruoka , Shigeyuki Ishiguro , Toshio Hayakawa , Yosuke Mizutani
发明人： Mitsufumi KODAMA , Toshiaki Maruoka , Shigeyuki Ishiguro , Toshio Hayakawa , Yosuke Mizutani
IPC分类号： H01J1/62
CPC分类号： H01L51/5246 , H01L27/3276 , H01L27/3288
摘要： An organic EL display apparatus comprises a display unit including a plurality of organic EL elements two-dimensionally arranged on a substrate, where the organic EL elements provide pixels, a sealing plate configured to be adhered to the substrate with an adhesive to cover the display unit, and a plurality of lead wires disposed on the substrate such that the lead wires are drawn outward from the display unit to the outside of the sealing plate. A linear bank is formed along an adhesion zone defined on the substrate to extend across the lead wires in a region where these lead wires are disposed. The sealing plate has its periphery adhered to the adhesion zone on the substrate along the adhesion zone on the substrate.
摘要翻译：有机EL显示装置包括：显示单元，其包括二维有序EL元件，二维排列在基板上，有机EL元件提供像素;密封板，被配置为用粘合剂粘附到基板上以覆盖显示单元以及设置在所述基板上的多根引线，使得所述引线从所述显示单元向外拉出到所述密封板的外部。线性组沿着限定在衬底上的粘附区形成，以在布置这些引线的区域中延伸穿过引线。密封板的周边沿着基板上的粘附区域附着在基板上的粘合区域上。

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