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1. 发明授权

US09097194B2 Control device controlling sensor heating in internal combustion engine 有权
标题翻译：控制装置控制内燃机中的传感器加热
公开(公告)号：US09097194B2
公开(公告)日：2015-08-04
申请号：US13551401
申请日：2012-07-17
申请人： Kunihiko Suzuki , Toshio Hori , Koji Matsufuji , Kenji Takada , Heikichi Kamoshita , Hiroshi Sekine
发明人： Kunihiko Suzuki , Toshio Hori , Koji Matsufuji , Kenji Takada , Heikichi Kamoshita , Hiroshi Sekine
IPC分类号： F02D41/00 , F02D41/14 , F02D41/06
CPC分类号： F02D41/1494 , F02D41/062 , F02D41/1445 , F02D41/1446 , F02D2041/1433 , F02D2041/1472
摘要： Control device of an internal combustion engine that determines whether or not to perform sensor element heating control of an air-fuel ratio sensor with high accuracy based on the mass of condensed water in an exhaust pipe. The control device computes the rate of change of condensed water mass in an exhaust pipe based on the saturated water vapor pressure and the water vapor partial pressure of exhaust gas, and computes the rate of change of evaporation mass in the exhaust pipe based on the amount of heat which the condensed water receives in the exhaust pipe. The control device updates the mass of condensed water based on the rate of change of condensed water mass and the rate of change of evaporation mass, and determines whether or not to perform heating control by a heating controlling unit based on the updated mass of condensed water.
摘要翻译：内燃机的控制装置，其基于排气管中的冷凝水的质量，判定是否以高精度进行空燃比传感器的传感器元件加热控制。控制装置基于饱和水蒸气压和排气的水蒸汽分压来计算排气管中的冷凝水质量的变化率，并且基于排气管的蒸发量的变化率来计算蒸发量的变化率冷凝水在排气管中受到的热量。控制装置基于冷凝水质量的变化率和蒸发质量的变化率来更新冷凝水的质量，并且基于更新的冷凝水质量来确定是否由加热控制单元进行加热控制。

2. 发明授权

US09029191B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09029191B2
公开(公告)日：2015-05-12
申请号：US12888825
申请日：2010-09-23
申请人： Shunpei Yamazaki , Takahiro Tsuji , Kunihiko Suzuki
发明人： Shunpei Yamazaki , Takahiro Tsuji , Kunihiko Suzuki
IPC分类号： H01L21/00 , H01L29/786 , H01L29/66 , H01L27/12
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02667 , H01L22/14 , H01L27/1225 , H01L29/04 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.
摘要翻译：本发明的目的是提供一种使用具有稳定电特性的氧化物半导体层的高可靠性薄膜晶体管。在使用氧化物半导体层的薄膜晶体管中，BT测试前后的薄膜晶体管的阈值电压的变化量为2V以下，优选为1.5V以下，更优选为1 V以下，由此可以制造具有高可靠性和稳定电特性的半导体器件。特别地，在作为半导体器件的一个实施例的显示装置中，可以降低由于阈值电压的变化引起的诸如显示不均的故障。

3. 发明授权

US09018109B2 Thin film transistor including silicon nitride layer and manufacturing method thereof 有权
标题翻译：包括氮化硅层的薄膜晶体管及其制造方法
公开(公告)号：US09018109B2
公开(公告)日：2015-04-28
申请号：US12715629
申请日：2010-03-02
申请人： Hidekazu Miyairi , Erika Kato , Kunihiko Suzuki
发明人： Hidekazu Miyairi , Erika Kato , Kunihiko Suzuki
IPC分类号： H01L21/31 , H01L21/469 , H01L29/49 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L29/4908 , H01L27/1214 , H01L27/1288 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed.
摘要翻译：其中不可能引起初始操作劣化的薄膜晶体管及其制造方法。一种晶体管，其至少具有栅极绝缘层，其最上表面是氮化硅层，栅极绝缘层上的半导体层，以及半导体层上的缓冲层，其中，在界面附近的氮浓度半导体层中的半导体层和栅极绝缘层比缓冲层和半导体层的其它部分低。这样的薄膜晶体管可以通过将栅极绝缘层暴露于空气气氛中，并且在形成半导体层之前对栅极绝缘层进行等离子体处理来制造。

4. 发明授权

US08921212B2 Manufacturing apparatus and method for semiconductor device 有权
标题翻译：半导体器件的制造装置和方法
公开(公告)号：US08921212B2
公开(公告)日：2014-12-30
申请号：US13685870
申请日：2012-11-27
申请人： Kunihiko Suzuki , Shinichi Mitani
发明人： Kunihiko Suzuki , Shinichi Mitani
IPC分类号： H01L21/02 , C23C16/458 , C30B25/10 , H01L21/67 , H01L21/687
CPC分类号： H01L21/02639 , C23C16/4584 , C23C16/4586 , C30B25/10 , H01L21/67109 , H01L21/68792
摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
摘要翻译：半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

5. 发明授权

US08447500B2 Control method of internal combustion engine 有权
标题翻译：内燃机控制方法
公开(公告)号：US08447500B2
公开(公告)日：2013-05-21
申请号：US13029196
申请日：2011-02-17
申请人： Kunihiko Suzuki , Seiji Asano
发明人： Kunihiko Suzuki , Seiji Asano
IPC分类号： F02D28/00 , F02M25/07 , F02P5/15
CPC分类号： F02D41/0235 , F01N11/005 , F02B29/0406 , F02B31/06 , F02B37/16 , F02B37/18 , F02B39/16 , F02B2275/48 , F02D13/0211 , F02D13/0238 , F02D13/0246 , F02D13/0261 , F02D29/06 , F02D37/02 , F02D41/0007 , F02D41/005 , F02D41/0072 , F02D41/024 , F02D41/1447 , F02D2041/001 , F02D2041/0265 , F02D2200/0804 , F02M26/06 , F02M26/10 , F02M26/15 , F02M26/23 , Y02T10/125 , Y02T10/166 , Y02T10/18 , Y02T10/26 , Y02T10/47
摘要： The invention provides a method for preferably controlling an internal combustion engine by precisely estimating a current value of a temperature of an exhaust device of an internal combustion engine provided with a variable valve, an exhaust turbo supercharger and the like, and controlling an affector of a temperature of an exhaust gas on the basis of a difference between a reference value of the exhaust device temperature and the current value of the exhaust device temperature. The method computes a temperature of an exhaust gas on the basis of a rotating speed, a charging efficiency, an ignition timing, an equivalent ratio, an external EGR rate, an exhaust valve opening timing, and a supercharging pressure, estimates a temperature of an exhaust device on the basis of the exhaust gas temperature, an amount of an intake air, a temperature of a fluid around the exhaust device and a flow rate around the exhaust device, and transiently corrects at least one of the ignition timing, the equivalent ratio, the external EGR rate, and the exhaust valve opening timing, on the basis of the estimation value and the reference value.
摘要翻译：本发明提供了一种优选地通过精确估计设置有可变阀，排气涡轮增压器等的内燃机的排气装置的温度的当前值来控制内燃机的方法，并且控制内燃机的污染物基于排气装置温度的基准值和排气装置温度的当前值之间的差异，排出废气的温度。该方法基于旋转速度，充电效率，点火正时，等效比，外部EGR率，排气门打开正时和增压压力来计算废气的温度，估计温度排气装置，其基于废气温度，进气量，排气装置周围的流体的温度和排气装置周围的流量，并且暂时校正点火正时，等效比中的至少一个，外部EGR率和排气门打开定时，基于估计值和参考值。

6. 发明授权

US08441010B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08441010B2
公开(公告)日：2013-05-14
申请号：US13164806
申请日：2011-06-21
申请人： Mitsuhiro Ichijo , Toshiya Endo , Kunihiko Suzuki , Yasuhiko Takemura
发明人： Mitsuhiro Ichijo , Toshiya Endo , Kunihiko Suzuki , Yasuhiko Takemura
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×1020 atoms/cm3 and a halogen concentration greater than or equal to 1×1020 atoms/cm3; accordingly, hydrogen diffusion into the oxide semiconductor layer can be prevented and hydrogen in the oxide semiconductor layer is inactivated or released from the oxide semiconductor layer by the halogen, whereby a semiconductor device having good electrical characteristics can be provided.
摘要翻译：在包括氧化物半导体的晶体管中，氧化物半导体中的氢导致晶体管的电特性的劣化。因此，目的在于提供具有良好的电气特性的半导体器件。通过使用卤化硅的等离子体CVD法形成与形成沟道区的氧化物半导体层接触的绝缘层。如此形成的绝缘层的氢浓度小于6×1020原子/ cm3，卤素浓度大于或等于1×1020原子/ cm3; 因此，可以防止氢扩散到氧化物半导体层中，并且氧化物半导体层中的氢被卤素氧化半导体层失活或释放，从而可以提供具有良好电特性的半导体器件。

7. 发明申请

US20130068164A1 HEATING UNIT AND FILM-FORMING APPARATUS 审中-公开
标题翻译：加热单元和成膜装置
公开(公告)号：US20130068164A1
公开(公告)日：2013-03-21
申请号：US13611493
申请日：2012-09-12
申请人： Naohisa IKEYA , Kunihiko Suzuki , Yuusuke Sato
发明人： Naohisa IKEYA , Kunihiko Suzuki , Yuusuke Sato
IPC分类号： F27D11/00 , C23C16/46
CPC分类号： C23C16/46 , C30B25/10 , C30B35/00 , F27B17/0025 , F27D2099/0065 , H01L21/67103
摘要： A heating unit and a film-forming apparatus comprising of a film-forming chamber, a heating unit for heating a substrate placed in the film-forming chamber, wherein the heating unit comprises of a heat source with a plane surfaced top, an electrode contacting electrically with the heat source, wherein the heat source has a ring-shape or a disk-shape that is formed by an individual, or plurality of heat source members. Wherein the heat source is comprised of a material selected from a group consisting of a carbon (C) material, a carbon material or a silicon carbide (SiC) material coated with silicon carbide (SiC), and a silicon carbide (SiC) material, and wherein the heat source has a ratio of the width (a) of the top portion direction to the thickness (X) of the side part (a/X) is 3 to 10.
摘要翻译：一种加热单元和成膜设备，包括成膜室，用于加热置于成膜室中的基底的加热单元，其中加热单元包括具有顶面平面的热源，电极接触与热源电连接，其中热源具有由单个或多个热源构件形成的环形或圆盘形状。其中，热源由选自由碳（C）材料，碳材料或涂覆有碳化硅（SiC）的碳化硅（SiC）材料和碳化硅（SiC）材料组成的组中的材料组成，并且其中所述热源具有所述顶部方向的宽度（a）与所述侧面部分（a / X）的厚度（X）的比率为3至10。

8. 发明申请

US20120329597A1 SPEED REDUCTION MECHANISM AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SPEED REDUCTION MECHANISM 审中-公开
标题翻译：减速机构和电机扭矩传动装置，包括减速机构
公开(公告)号：US20120329597A1
公开(公告)日：2012-12-27
申请号：US13525547
申请日：2012-06-18
申请人： Keita NOMURA , Kunihiko SUZUKI , Tomoyoshi TAKAI , Tsune KOBAYASHI , Tohru ONOZAKI , Masaharu TAGAMI
发明人： Keita NOMURA , Kunihiko SUZUKI , Tomoyoshi TAKAI , Tsune KOBAYASHI , Tohru ONOZAKI , Masaharu TAGAMI
IPC分类号： F16H1/32 , F16H48/06
CPC分类号： F16H57/043 , B60K17/356 , B60K2001/001 , B60L50/16 , B60L2240/486 , B60L2260/28 , F16H1/32 , F16H57/0428 , F16H2001/325 , Y02T10/70 , Y02T10/7077
摘要： A reduction-transmission mechanism includes: an input member formed of an external gear that makes circular motion with an eccentric amount; a rotation force applying member formed of an internal gear that is in mesh with the input member; and output members that receive and output rotation force applied to the input member by the rotation force applying member, and that are passed through the respective pin insertion holes. Each of the output members is provided with a needle roller bearing at a portion that is able to contact an inner periphery, which defines a corresponding one of the through-holes, and the input member has third oil supply passages that extend from the center hole to the pin insertion holes, and lubricating oil is supplied to the needle roller bearings through the third oil supply passages by centrifugal force generated in accordance with rotation of the motor shaft.
摘要翻译：减速传动机构包括：由具有偏心量的圆周运动的外齿轮构成的输入部件; 由与所述输入部件啮合的内齿轮构成的旋转力施加部件; 以及输出构件，其接收并输出由旋转力施加构件施加到输入构件的旋转力，并且通过各个销插入孔。每个输出构件在能够接触限定相应一个通孔的内周的部分处设置有滚针轴承，并且输入构件具有从中心孔延伸的第三供油通道到销插入孔，并且通过根据电动机轴的旋转产生的离心力通过第三供油通道向滚针轴承供给润滑油。

9. 发明申请

US20120325138A1 FILM-FORMING APPARATUS AND FILM-FORMING METHOD 有权
标题翻译：薄膜成型装置和成膜方法
公开(公告)号：US20120325138A1
公开(公告)日：2012-12-27
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko SUZUKI , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko SUZUKI , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
CPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.
摘要翻译：一种成膜装置和方法，包括：用于将反应气体供应的成膜室，设置在成膜室的内壁和用于进行成膜工艺的空间之间的圆柱形衬套，主加热器用于从底侧加热设置在衬套内的衬底，设置在衬套和内壁之间的副加热器组，用于从顶侧加热衬底，其中主加热器和次加热器组是电阻的加热器，其中所述副加热器组具有设置在与所述基板最靠近的位置的第一副加热器，以及设置在所述第一子加热器上方的第二副加热器，其中所述第一副加热器将所述基板与主加热器，第二分热器以比第一副加热器低的输出加热衬套，其中主加热器，第一副加热器和第二副加热器的每个温度被单独控制。

10. 发明授权

US08326516B2 Engine control device 有权
标题翻译：发动机控制装置
公开(公告)号：US08326516B2
公开(公告)日：2012-12-04
申请号：US12786903
申请日：2010-05-25
申请人： Seiji Asano , Shingo Kimura , Kenichi Kotabe , Kenji Mizushima , Kunihiko Suzuki
发明人： Seiji Asano , Shingo Kimura , Kenichi Kotabe , Kenji Mizushima , Kunihiko Suzuki
IPC分类号： F02D41/04 , F02D13/02 , F01L1/34 , F02P5/04
CPC分类号： F02D41/0002 , F02D13/0219 , F02D41/18 , F02D2041/001 , F02D2200/0402 , F02D2200/0408 , F02M26/01 , F02P5/1504 , Y02T10/18 , Y02T10/42 , Y02T10/46
摘要： There is provided an engine control device which can accurately calculate a compensation coefficient used for transient compensation of an ignition timing without involving a complicated and large-scale calculation model in order to prevent a combustion deterioration and the like caused by a mechanical response delay and the like of the variable valve timing mechanism at a transition time such as an acceleration/deceleration time. The angular difference between each current real phase of the intake/exhaust valves 21 and 22 and a target phase set based on an engine load equivalent amount such as an intake air amount is obtained; the shift amount or its correlation value between a current real intake air amount and a theoretical intake air amount value calculated using a pressure inside an intake manifold when each phase of the intake/exhaust valves has reached the target phase is obtained; further a compensation coefficient for matching the shift amount or its correlation value with the angular difference is obtained; and the compensation coefficient is used to perform transient compensation of an ignition timing.
摘要翻译：提供了一种发动机控制装置，其能够精确地计算用于点火正时的瞬时补偿的补偿系数，而不涉及复杂的大型计算模型，以防止由机械响应延迟引起的燃烧劣化等，类似于可变气门正时机构在诸如加速/减速时间的转变时间。获得进气/排气门21和22的每个电流实际相位与基于诸如进气量之类的发动机负载当量量设定的目标相位之间的角度差; 获得当进气/排气阀的各相达到目标相位时，使用进气歧管内的压力计算出的当前实际进气量与理论进气量值之间的偏移量或其相关值; 获得用于使偏移量或其相关值与角度差匹配的补偿系数; 并且使用补偿系数来执行点火正时的瞬时补偿。

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