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    • 8. 发明申请
    • Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith
    • 用于制造微机电装置的方法和由其获得的微机电装置
    • US20060040505A1
    • 2006-02-23
    • US10531934
    • 2003-10-17
    • Jozef Van BeekMargot Van Grootel
    • Jozef Van BeekMargot Van Grootel
    • H01L21/302
    • B81C1/00595B81B2203/0323B81C2201/0142
    • The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) has been deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer (4) a further layer (6) is provided on top of the first insulating layer (3) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers (3, 4) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer (4) is preferably removed locally by etching, then the further layer (6) is completely removed by etching and, finally, the second insulating layer (4) is completely removed by etching.
    • 本发明涉及一种制造微机电器件(10)的方法,其中连续地沉积在其上形成有电极(2A)的第一导电层(2)的基板(1)上,第一电绝缘层 (3),与第一材料不同的第二材料的第二电绝缘层(4)和形成有与第一电极相对的第二电极(5A)的第二导电层(5),其中, 与第一电极(2A)和第一绝缘层(3)一起形成器件(10),其中在第二导电层(5)沉积之后,通过以下步骤除去第二绝缘层(4): 相对于第二导电层(5)的材料是选择性的蚀刻剂。 根据本发明,选择第一材料和第二材料材料,其仅相对于彼此有限地可选择性地蚀刻,并且在沉积第二绝缘层(4)之前,另外的层(6)设置在第一绝缘体 层(3),其可相对于第一材料可选择性地蚀刻。 以这种方式,可以对绝缘层(3,4)施加氧化硅和氮化硅,因此根据本发明的方法与当前的IC工艺非常兼容。 优选通过蚀刻局部地去除第二绝缘层(4),然后通过蚀刻完全去除另外的层(6),最后通过蚀刻完全去除第二绝缘层(4)。