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    • 9. 发明授权
    • Semiconductor devices having recessed channels
    • 具有凹槽的半导体器件
    • US08445959B2
    • 2013-05-21
    • US13586593
    • 2012-08-15
    • Joo-Young LeeDong-Gun Park
    • Joo-Young LeeDong-Gun Park
    • H01L29/66
    • H01L27/10823H01L27/10814H01L27/10852H01L27/10876
    • A semiconductor device includes a substrate, a gate insulation layer, a gate structure, a gate spacer, and first and second impurity regions. The substrate has an active region defined by an isolation layer. The active region has a gate trench thereon. The gate insulation layer is formed on an inner wall of the gate trench. The gate structure is formed on the gate insulation layer to fill the gate trench. The gate structure has a width smaller than that of the gate trench, and has a recess at a first portion thereof. The gate spacer is formed on sidewalls of the gate structure. The first and second impurity regions are formed at upper portions of the active region adjacent to the gate structure. The first impurity region is closer to the recess than the second impurity region. Related methods are also provided.
    • 半导体器件包括衬底,栅极绝缘层,栅极结构,栅极间隔物以及第一和第二杂质区域。 衬底具有由隔离层限定的有源区。 有源区在其上具有栅极沟槽。 栅极绝缘层形成在栅极沟槽的内壁上。 栅极结构形成在栅极绝缘层上以填充栅极沟槽。 栅极结构的宽度小于栅极沟槽的宽度,并且在其第一部分处具有凹部。 栅极间隔件形成在栅极结构的侧壁上。 第一和第二杂质区域形成在与栅极结构相邻的有源区的上部。 第一杂质区比第二杂质区更靠近凹部。 还提供了相关方法。