会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • METHODS OF FABRICATING CMOS IMAGE SENSORS
    • 制作CMOS图像传感器的方法
    • US20080182354A1
    • 2008-07-31
    • US11950249
    • 2007-12-04
    • Jong-Jin LeeJu-Hyun KoJong-Eun ParkHyun-Suk KimDong-Yoon Jang
    • Jong-Jin LeeJu-Hyun KoJong-Eun ParkHyun-Suk KimDong-Yoon Jang
    • H01L31/18
    • H01L27/14643H01L27/14603H01L27/1463H01L27/14681H01L27/14689
    • CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
    • 公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。 在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。 具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。 传输栅极形成在半导体衬底上并且至少部分地与第一,第二和第三杂质区重叠。 光敏元件形成在半导体衬底中并与传输门的一侧相邻。 浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。
    • 9. 发明申请
    • Image sensors and image sensing methods selecting photocurrent paths according to incident light
    • 图像传感器和图像感测方法根据入射光选择光电流路径
    • US20080012973A1
    • 2008-01-17
    • US11806594
    • 2007-06-01
    • Jong-Eun ParkYong-Jei Lee
    • Jong-Eun ParkYong-Jei Lee
    • H04N5/335
    • H04N5/335H04N5/378
    • Example embodiments may be directed to CMOS image sensors and image sensing methods selecting a path for photocurrent according to the quantity or amount of incident light. The CMOS image sensor may include a pixel array comprised of a plurality of pixel pairs. A pixel pair may include a first pixel, including a first photo diode, a first pair of transistors, and a first floating diffusion node having a first capacitance. The pixel pair may further include a second pixel, including a second photo diode, a second pair of transistors, and a second floating diffusion node having a second capacitance. A first one of the first pair of transistors may be connected between the first photo diode and the first floating diffusion node. A second one of the first pair of transistors may be connected between the first photo diode and the second floating diffusion node. A first one of the second pair of transistors may be connected between the second photo diode and the second floating diffusion node. A second one of the second pair of transistors may be connected between the second photo diode and a first floating diffusion node of a next pixel pair. The first capacitance of the first floating diffusion node may be greater than the second capacitance of the second floating diffusion node.
    • 示例性实施例可以针对CMOS图像传感器和图像感测方法,其根据入射光的量或量选择光电流的路径。 CMOS图像传感器可以包括由多个像素对组成的像素阵列。 像素对可以包括第一像素,包括第一光电二极管,第一对晶体管和具有第一电容的第一浮动扩散节点。 像素对还可以包括第二像素,包括第二光电二极管,第二对晶体管和具有第二电容的第二浮动扩散节点。 第一对晶体管中的第一对可以连接在第一光电二极管和第一浮动扩散节点之间。 第一对晶体管中的第二对可以连接在第一光电二极管和第二浮动扩散节点之间。 第二对晶体管中的第一对可以连接在第二光电二极管和第二浮动扩散节点之间。 第二对晶体管中的第二对可以连接在第二光电二极管和下一个像素对的第一浮动扩散节点之间。 第一浮动扩散节点的第一电容可以大于第二浮动扩散节点的第二电容。