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1. 发明申请

US20120161998A1 RAMP SIGNAL GENERATOR, ANALOG TO DIGITAL CONVERTER, AND IMAGE SENSOR 有权
标题翻译： RAMP信号发生器，模拟数字转换器和图像传感器
公开(公告)号：US20120161998A1
公开(公告)日：2012-06-28
申请号：US13165495
申请日：2011-06-21
申请人： Jinwook Burm , Bongsub Song , Na-Yeon Cho , Sang-Wook Han , Won-Hee Choe
发明人： Jinwook Burm , Bongsub Song , Na-Yeon Cho , Sang-Wook Han , Won-Hee Choe
IPC分类号： H03M1/12 , H03K4/06
CPC分类号： H03K4/06 , H03M1/08 , H03M1/56
摘要： Provided is an analog-to-digital (A/D) converter that may be used in an image sensor and a ramp signal generator that is used in an A/D converter. The ramp signal generator may generate a ramp signal and a reference voltage signal that include noise that has same noise characteristics that are input into the ramp signal, such that the signal to noise ratio (SNR) is improved and the image quality is also improved.
摘要翻译：提供了可用于A / D转换器中使用的图像传感器和斜坡信号发生器中的模数（A / D）转换器。斜坡信号发生器可以产生斜坡信号和参考电压信号，该参考电压信号包括输入到斜坡信号中的具有相同噪声特性的噪声，使得信噪比（SNR）得到改善并且图像质量也得到改善。

2. 发明授权

US5932379A Repairing fractured wafers in semiconductor manufacturing 失效
$Repairing fractured wafers in semiconductor manufacturing$
标题翻译：修复半导体制造中的断裂晶片
公开(公告)号：US5932379A
公开(公告)日：1999-08-03
申请号：US28966
申请日：1998-02-24
申请人： Jinwook Burm , Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
发明人： Jinwook Burm , Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
IPC分类号： H01L21/66 , G03F9/00
CPC分类号： H01L22/20 , Y10S430/143 , Y10S430/167
摘要： The specification describes a technique for repairing wafer fractures that occur during wafer fabrication. The fractured pieces are joined edge-to-edge at the fracture line and bonded with epoxy adhesive. The method succeeds because the dimensions of the fracture line after bonding is within the reregistration tolerance of commercial step-and-repeat cameras and the reregistration capability of the camera allows normal exposure of sites that do not intersect the fracture line.
摘要翻译：本说明书描述了在晶片制造期间发生的晶片裂缝的修复技术。断裂片在断裂线处边缘到边缘连接并用环氧树脂粘合剂粘结。该方法成功，因为接合后断裂线的尺寸在商业步进和重复相机的重新注册容限内，并且相机的重新注册能力允许不与断裂线相交的位点的正常曝光。

3. 发明授权

US08482448B2 Ramp signal generator, analog to digital converter, and image sensor 有权
标题翻译：斜坡信号发生器，模数转换器和图像传感器
公开(公告)号：US08482448B2
公开(公告)日：2013-07-09
申请号：US13165495
申请日：2011-06-21
申请人： Jinwook Burm , Bongsub Song , Na-Yeon Cho , Sang-Wook Han , Won-Hee Choe
发明人： Jinwook Burm , Bongsub Song , Na-Yeon Cho , Sang-Wook Han , Won-Hee Choe
IPC分类号： H03M1/56
CPC分类号： H03K4/06 , H03M1/08 , H03M1/56
摘要： Provided is an analog-to-digital (A/D) converter that may be used in an image sensor and a ramp signal generator that is used in an A/D converter. The ramp signal generator may generate a ramp signal and a reference voltage signal that include noise that has same noise characteristics that are input into the ramp signal, such that the signal to noise ratio (SNR) is improved and the image quality is also improved.
摘要翻译：提供了可用于A / D转换器中使用的图像传感器和斜坡信号发生器中的模数（A / D）转换器。斜坡信号发生器可以产生斜坡信号和参考电压信号，该参考电压信号包括输入到斜坡信号中的具有相同噪声特性的噪声，使得信噪比（SNR）得到改善并且图像质量也得到改善。

4. 发明申请

US20110194007A1 CMOS IMAGE SENSOR 审中-公开
标题翻译： CMOS图像传感器
公开(公告)号：US20110194007A1
公开(公告)日：2011-08-11
申请号：US12781739
申请日：2010-05-17
申请人： Byung Hoon KIM , Jinwook Burm , Won Tae Choi
发明人： Byung Hoon KIM , Jinwook Burm , Won Tae Choi
IPC分类号： H04N5/335
CPC分类号： H04N5/3575 , H04N5/3745 , H04N5/378
摘要： Disclosed herein is a Complementary Metal-Oxide Semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array, a frame memory, and an analog-to-digital converter. The pixel array includes N unit pixels for converting optical signals, caused by light, into electric signals. The frame memory eliminates offset voltage included in reset voltage and signal voltage transmitted from the pixel array and internal offset voltage, and performs Correlated Double Sampling (CDS) on the reset voltage and the signal voltage. The analog-to-digital converter converts an analog signal, transmitted from the frame memory, into a digital signal.
摘要翻译：本文公开了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括像素阵列，帧存储器和模数转换器。像素阵列包括用于将由光引起的光信号转换为电信号的N个单位像素。帧存储器消除复位电压中包含的偏移电压和从像素阵列传输的信号电压和内部偏移电压，并对复位电压和信号电压执行相关双采样（CDS）。模数转换器将从帧存储器发送的模拟信号转换为数字信号。

5. 发明授权

US6042975A Alignment techniques for photolithography utilizing multiple photoresist layers 失效
标题翻译：利用多个光致抗蚀剂层的光刻对准技术
公开(公告)号：US6042975A
公开(公告)日：2000-03-28
申请号：US111534
申请日：1998-07-08
申请人： Jinwook Burm , Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
发明人： Jinwook Burm , Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
IPC分类号： G03F9/00 , H01L21/027 , H01L21/285 , H01L21/335
CPC分类号： H01L29/66462 , G03F9/708 , G03F9/7084 , H01L21/0274 , H01L21/28587
摘要： The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.
摘要翻译：本说明书描述了使用多次曝光形成z维图案的光刻工艺。使用与在第一次曝光期间形成的对准标记的潜像对准的光掩模进行不同厚度级别的多次曝光。潜像对于商业步进机的对准系统是可见的。

6. 发明授权

US06664573B2 Avalanche photodiode 失效
公开(公告)号：US06664573B2
公开(公告)日：2003-12-16
申请号：US10071008
申请日：2002-02-07
申请人： Moon-Deock Kim , Seung-Ryong Cho , Jinwook Burm
发明人： Moon-Deock Kim , Seung-Ryong Cho , Jinwook Burm
IPC分类号： H01L310328
CPC分类号： H01L31/107
摘要： An avalanche photodiode capable of generating a minimal surface leakage current as well as achieving a uniform electrical field. The avalanche photodiode includes a semiconductor substrate provided with a lower electrode underneath it, an amplification layer producing pairs of electron-holes through ionized collision of carriers injected by an internal electrical field, and an absorption layer producing the carriers according to splitting of the pairs of electron-holes by the electrical field. The avalanche photodiode further includes a contact layer formed on the absorption layer, with a core section in the center of the contact layer and a guard section surrounding the core section spaced apart from each other, and at least one upper electrode with a core electrode formed on the core section and a guard electrode formed on the guard section. The upper electrode generates the internal electrical field together with the lower electrode.

7. 发明授权

US6139995A Method of manufacturing schottky gate transistor utilizing alignment techniques with multiple photoresist layers 有权
标题翻译：利用具有多个光致抗蚀剂层的对准技术制造肖特基栅极晶体管的方法
公开(公告)号：US6139995A
公开(公告)日：2000-10-31
申请号：US523210
申请日：2000-03-10
申请人： Jinwook Burm , Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
发明人： Jinwook Burm , Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
IPC分类号： G03F9/00 , H01L21/027 , H01L21/285 , H01L21/335
CPC分类号： H01L29/66462 , G03F9/708 , G03F9/7084 , H01L21/0274 , H01L21/28587
摘要： The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.
摘要翻译：本说明书描述了使用多次曝光形成z维图案的光刻工艺。使用与在第一次曝光期间形成的对准标记的潜像对准的光掩模进行不同厚度级别的多次曝光。潜像对于商业步进机的对准系统是可见的。

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