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1. 发明授权

US08004231B2 Control of a triac for the starting of a motor 有权
标题翻译：控制起动电动机的三端双向可控硅开关
公开(公告)号：US08004231B2
公开(公告)日：2011-08-23
申请号：US12391947
申请日：2009-02-24
申请人： Laurent Gonthier , Jean-Michel Simonnet
发明人： Laurent Gonthier , Jean-Michel Simonnet
IPC分类号： H02P1/16
CPC分类号： H02P1/42
摘要： A method and a circuit for controlling a triac intended to be series-connected with a resistive element of positive temperature coefficient or a capacitive element, and a winding for starting an asynchronous motor, for supply by an A.C. voltage, the present invention including the steps of: detecting a voltage representative of the voltage across the series connection of the element and of the triac; comparing this detected voltage with respect to a threshold; and blocking a turning back on of the triac when the threshold has been exceeded.
摘要翻译：一种用于控制旨在与正温度系数的电阻元件串联连接的三端双向可控硅开关元件或电容元件的电路，以及用于启动异步电动机的绕组，用于由AC电压供电，本发明包括步骤：检测表示元件和三端双向可控硅开关元件的串联连接上的电压的电压; 将该检测到的电压相对于阈值进行比较; 并且当超过阈值时阻止三端双向可控硅开关的反转。

2. 发明授权

US06818927B2 Sensitive high bidirectional static switch 有权
标题翻译：高灵敏度双向静态开关
公开(公告)号：US06818927B2
公开(公告)日：2004-11-16
申请号：US10182540
申请日：2002-07-25
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： H01L2974
CPC分类号： H01L29/747
摘要： A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.
摘要翻译：本发明涉及一种形成在N型半导体衬底中的双向开关，其包括第一主垂直晶闸管，其背面层为P型导电，第二主垂直晶闸管的背面层为N型，P 型外围区域，从前表面延伸到后表面，覆盖后表面的第一金属化层，连接第一和第二晶闸管的前面层的正面侧的第二金属化层和连接第一和第二晶闸管的N面栅极区域周边区域的上表面的一部分。

3. 发明授权

US06593600B1 Responsive bidirectional static switch 有权
标题翻译：响应式双向静态开关
公开(公告)号：US06593600B1
公开(公告)日：2003-07-15
申请号：US09634076
申请日：2000-08-08
申请人： Franck Duclos , Jean-Michel Simonnet , Olivier Ladiray
发明人： Franck Duclos , Jean-Michel Simonnet , Olivier Ladiray
IPC分类号： H01L2974
CPC分类号： H01L29/747
摘要： A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.
摘要翻译：形成在N型半导体衬底中的单片双向开关，包括其表面层为P型的第一主垂直晶闸管，后表面为N型的第二主垂直晶闸管，辅助垂直晶闸管的后表面层为P型，与第一主晶闸管相同，P型周边区域特别将辅助晶闸管的背面层与位于另一侧的该晶闸管的层连接在第一和第二晶闸管的前表面层连接前表面侧上的第二金属化层。附加区域具有隔离辅助晶闸管的后表面和第一金属化的功能。

4. 发明授权

US08269252B2 Structure of high-frequency components with low stray capacitances 有权
标题翻译：具有低杂散电容的高频分量的结构
公开(公告)号：US08269252B2
公开(公告)日：2012-09-18
申请号：US12059600
申请日：2008-03-31
申请人： Jean-Michel Simonnet , André Lhorte , Patrick Poveda
发明人： Jean-Michel Simonnet , André Lhorte , Patrick Poveda
IPC分类号： H01L29/72
CPC分类号： H01L29/8611 , H01L21/76264 , H01L27/0251 , H01L27/0814 , H01L27/1203 , H01L29/06
摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
摘要翻译：包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。

5. 发明申请

US20080237785A1 STRUCTURE OF HIGH-FREQUENCY COMPONENTS WITH LOW STRAY CAPACITANCES 有权
标题翻译：具有低电流电容的高频部件的结构
公开(公告)号：US20080237785A1
公开(公告)日：2008-10-02
申请号：US12059600
申请日：2008-03-31
申请人： Jean-Michel Simonnet , Andre Lhorte , Patrick Poveda
发明人： Jean-Michel Simonnet , Andre Lhorte , Patrick Poveda
IPC分类号： H01L27/02
CPC分类号： H01L29/8611 , H01L21/76264 , H01L27/0251 , H01L27/0814 , H01L27/1203 , H01L29/06
摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
摘要翻译：包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。

6. 发明授权

US06921930B2 Pulse-controlled bistable bidirectional electronic switch 有权
标题翻译：脉冲双稳态双向电子开关
公开(公告)号：US06921930B2
公开(公告)日：2005-07-26
申请号：US10182541
申请日：2001-12-20
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： H01L29/747 , H01L29/74 , H01L31/111
CPC分类号： H01L29/747
摘要： The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G1), first (Th1) and second (Th2) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region (6), and a metallization (A1, A2) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.
摘要翻译：本发明涉及一种脉冲控制双稳态双向电子开关，包括一个单片半导体电路，该单片半导体电路包括一个垂直双向开关结构（TR; ACS），它具有一个栅极端子（G 1），第一个（Th 1）和第二个）晶闸管结构，其阳极形成在正面侧，第一晶闸管阳极区域包含辅助P型区域（6），以及金属化层（A 1，A 2），其连接到正面的主表面垂直双向分量和第二晶闸管阳极; 连接到第一晶闸管阳极和第二晶闸管补充N型区域的电容器（C）; 以及用于短路电容器的开关（SW）。

7. 发明申请

US20090174359A1 CONTROL OF A TRIAC FOR THE STARTING OF A MOTOR 有权
标题翻译：控制电机起动的三叉车
公开(公告)号：US20090174359A1
公开(公告)日：2009-07-09
申请号：US12391947
申请日：2009-02-24
申请人： Laurent Gonthier , Jean-Michel Simonnet
发明人： Laurent Gonthier , Jean-Michel Simonnet
IPC分类号： H02P1/44
CPC分类号： H02P1/42
摘要： A method and a circuit for controlling a triac intended to be series-connected with a resistive element of positive temperature coefficient or a capacitive element, and a winding for starting an asynchronous motor, for supply by an A.C. voltage, the present invention including the steps of: detecting a voltage representative of the voltage across the series connection of the element and of the triac; comparing this detected voltage with respect to a threshold; and blocking a turning back on of the triac when the threshold has been exceeded.
摘要翻译：一种用于控制旨在与正温度系数的电阻元件串联连接的三端双向可控硅开关元件或电容元件的电路，以及用于启动异步电动机的绕组，用于由AC电压供电，本发明包括步骤：检测表示元件和三端双向可控硅开关元件的串联连接上的电压的电压; 将该检测到的电压相对于阈值进行比较; 并且当超过阈值时阻止三端双向可控硅开关的反转。

8. 发明授权

US06674148B1 Lateral components in power semiconductor devices 有权
标题翻译：功率半导体器件中的侧向元件
公开(公告)号：US06674148B1
公开(公告)日：2004-01-06
申请号：US09428013
申请日：1999-10-27
申请人： Eric Bernier , Jean-Michel Simonnet
发明人： Eric Bernier , Jean-Michel Simonnet
IPC分类号： H01L3111
CPC分类号： H01L27/0814 , H01L29/735 , H01L29/7436
摘要： A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.
摘要翻译：用于调整形成在具有第一导电类型的半导体晶片的前表面中的侧向部件的增益或灵敏度的方法包括根据第一导电类型，当期望的情况下的背面不掺杂或过度掺杂降低横向分量的增益或灵敏度，并且当要增加侧向分量的增益或灵敏度时，根据第二导电类型（背面）掺杂。

9. 发明授权

US06380565B1 Bidirectional switch with increased switching breakdown voltage 有权
标题翻译：双向开关具有增加的开关击穿电压
公开(公告)号：US06380565B1
公开(公告)日：2002-04-30
申请号：US09634077
申请日：2000-08-08
申请人： Franck Duclos , Jean-Michel Simonnet , Olivier Ladiray
发明人： Franck Duclos , Jean-Michel Simonnet , Olivier Ladiray
IPC分类号： H01L29747
CPC分类号： H01L29/747
摘要： A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.
摘要翻译：一种形成在具有前表面和后表面的第一导电类型的半导体衬底中的单片双向开关，包括第一主垂直晶闸管，其第二导电类型的后表面层，第二主垂直晶闸管，其后表面层是第一导电类型。用于触发第一和第二主晶闸管中的每一个的结构被布置成面对与两个主晶闸管相互远离的区域，其相邻部分对应于对于第一主晶闸管，阴极之间的短路面积并形成阴极栅极。

10. 发明授权

US06369640B1 Zero crossing control structure for a bidirectional switch with a stable threshold 有权
标题翻译：具有稳定阈值的双向开关的过零点控制结构
公开(公告)号：US06369640B1
公开(公告)日：2002-04-09
申请号：US09628199
申请日：2000-07-28
申请人： Franck Duclos , Olivier Ladiray , Jean-Michel Simonnet
发明人： Franck Duclos , Olivier Ladiray , Jean-Michel Simonnet
IPC分类号： H03K1713
CPC分类号： H02M1/083 , H03K17/136
摘要： A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.
摘要翻译：一种双向开关的过零点控制电路，包括双向开关的栅极与双向开关的主参考端并联连接的两个互补型晶体管，双向开关的栅极经由第一电阻器，并且晶体管的每个控制端子经由高值的第二电阻器连接到双向开关的第二主端子，齐纳二极管根据偏压适配于介于第二电阻器和每个控制端子之间当超过齐纳阈值时，开启每个晶体管。

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