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    • 1. 发明授权
    • Rotation induced superlattice
    • 旋转诱导超晶格
    • US5415128A
    • 1995-05-16
    • US209693
    • 1994-03-09
    • Yung-Chung KaoHung-Yu LinAlan C. SeabaughJames H. Luscombe
    • Yung-Chung KaoHung-Yu LinAlan C. SeabaughJames H. Luscombe
    • C30B23/02H01L21/20H01L21/203H01L21/205H01S5/00
    • B82Y10/00C30B23/002C30B23/02C30B29/68H01L21/0237H01L21/02392H01L21/02463H01L21/02507H01L21/02546Y10S438/925
    • This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x-.DELTA.x)B(1-(x-.DELTA.x))/A(x+.DELTA.x)B(1-(x+.DELTA.x) where .DELTA.x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B. More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26. The growth rate and substrate rotation rate together determine the superlattice period.
    • 本发明描述了一种多沉积系统,其中以非对称方式将元素或分子源通量引导到衬底上并以低转速旋转衬底,形成具有A(x-DELTA x)B(1)的组成的超晶格 - (x-DELTA x))/ A(x + DELTA x)B(1-(x + DELTA x)其中DELTA x是元素或分子源通量A和B的不均匀聚焦的函数。更具体地,超晶格18 通过不进行机械快门的分子束外延在InP上的三元和四元In(GaAl)As合金中形成超晶格18是通过不均匀地将III族元素22和24引导到衬底26上而形成的,并且使衬底26跨过光束 通过基底26的旋转通过在旋转基底26处的源通量的不均匀分布产生周期性排序。生长速率和基底旋转速率一起确定超晶格周期。