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1. 发明授权

US07796586B2 Data stream transmission/reception device 有权
标题翻译：数据流发送/接收设备
公开(公告)号：US07796586B2
公开(公告)日：2010-09-14
申请号：US11852773
申请日：2007-09-10
申请人： Hitoshi Kudoh , Toshikazu Koudo , Kazuhiro Mihara , Masaharu Tsujimura
发明人： Hitoshi Kudoh , Toshikazu Koudo , Kazuhiro Mihara , Masaharu Tsujimura
IPC分类号： H04L12/50 , H04L12/56
CPC分类号： H04L12/40058 , H04L12/40117
摘要： A data stream transmission/reception device manages external devices in at least two groups, assigns independent resources to the groups, and for each group, a connection is made to the assigned hardware resource via a preferentially-used plug. This enables handling a plurality of streams at the same time in the case of being connected to a plurality of conventional external devices that have only one logical plug.
摘要翻译：数据流发送/接收设备至少管理两个组中的外部设备，向组分配独立资源，并且对于每个组，经由优先使用的插头连接到所分配的硬件资源。在连接到仅具有一个逻辑插头的多个常规外部设备的情况下，这能够同时处理多个流。

2. 发明申请

US20080075086A1 DATA STREAM TRANSMISSION/RECEPTION DEVICE 有权
标题翻译：数据流传输/接收设备
公开(公告)号：US20080075086A1
公开(公告)日：2008-03-27
申请号：US11852773
申请日：2007-09-10
申请人： Hitoshi Kudoh , Toshikazu Koudo , Kazuhiro Mihara , Masaharu Tsujimura
发明人： Hitoshi Kudoh , Toshikazu Koudo , Kazuhiro Mihara , Masaharu Tsujimura
IPC分类号： H04L12/56
CPC分类号： H04L12/40058 , H04L12/40117
摘要： A data stream transmission/reception device manages external devices in at least two groups, assigns independent resources to the groups, and for each group, a connection is made to the assigned hardware resource via a preferentially-used plug. This enables handling a plurality of streams at the same time in the case of being connected to a plurality of conventional external devices that have only one logical plug.
摘要翻译：数据流发送/接收设备至少管理两个组中的外部设备，向组分配独立资源，并且对于每个组，经由优先使用的插头连接到所分配的硬件资源。在连接到仅具有一个逻辑插头的多个常规外部设备的情况下，这能够同时处理多个流。

3. 发明授权

US5416355A Semiconductor integrated circuit protectant incorporating cold cathode field emission 失效
标题翻译：包含冷阴极场致发射的半导体集成电路保护器
公开(公告)号：US5416355A
公开(公告)日：1995-05-16
申请号：US116216
申请日：1993-09-02
申请人： Hitoshi Kudoh
发明人： Hitoshi Kudoh
IPC分类号： H01L23/58 , H01L23/48 , H01L29/46 , H01L29/60 , H01L29/62
CPC分类号： H01L23/585 , H01L2924/0002
摘要： An electronic element is provided which includes a pair of electrodes (referred to as facing electrodes) formed within the groove of an insulating film on the substrate, the end portions of the electrodes being separated and facing each other in the groove. When a voltage of a predetermined value or more is applied between the facing electrodes, there occurs a cold cathode emission which causes a flow of electrons from one of the electrodes to the other. At that time, the facing electrodes are melted by heat generated by the applied voltage, and either a short circuit or insulation between the facing electrodes, is attained, depending on the selected structure of the element. In this way, the electronic element of the present invention can perform the protection of semiconductor devices and semiconductor circuits. Also, the electronic element of the present invention can perform the operation of selecting a desired load resistance to be applied to a specific circuit.
摘要翻译：提供一种电子元件，其包括形成在基板上的绝缘膜的沟槽内的一对电极（称为对置电极），电极的端部在沟槽中彼此分离并面对。当在相对电极之间施加预定值以上的电压时，会发生冷阴极发射，导致电子从一个电极流向另一个电极。此时，由所施加的电压产生的热量使面对的电极熔化，并且取决于所选择的元件的结构，实现面对电极之间的短路或绝缘。以这种方式，本发明的电子元件可以执行半导体器件和半导体电路的保护。此外，本发明的电子元件也可以进行选择要施加到特定电路的期望负载电阻的操作。

4. 发明授权

US5331192A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5331192A
公开(公告)日：1994-07-19
申请号：US937440
申请日：1992-08-27
申请人： Hitoshi Kudoh
发明人： Hitoshi Kudoh
IPC分类号： H01L27/088 , H01L27/02
CPC分类号： H01L27/088
摘要： A semiconductor device includes plural transistors in which the transistors themselves share a gate and a channel region and posses three or more source and drain regions. In such a configuration, a drain current is determined by the voltage application condition (potential difference of all source and drain regions). Therefore, assuming one of the three source and drain regions to be a control terminal (disturbance terminal) instability or drift of the transistor operation may be intentionally produced by applying proper voltages to each of the three source and drain regions.
摘要翻译：半导体器件包括晶体管本身共享栅极和沟道区域并且具有三个或更多个源极和漏极区域的多个晶体管。在这种结构中，漏极电流由电压施加条件（所有源极和漏极区域的电位差）决定。因此，通过对三个源极和漏极区域中的每一个施加适当的电压，可以有意地产生三个源极和漏极区域中的一个作为控制端子（干扰端子）的不稳定性或晶体管工作的漂移。

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