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    • 3. 发明授权
    • Micro-machined thin film hydrogen gas sensor, and method of making and using the same
    • 微加工薄膜氢气传感器及其制造和使用方法
    • US06265222B1
    • 2001-07-24
    • US09231277
    • 1999-01-15
    • Frank DiMeo, Jr.Gautam Bhandari
    • Frank DiMeo, Jr.Gautam Bhandari
    • G01N700
    • G01N27/128G01N21/59G01N21/783G01N27/12G01N33/0014G01N33/005G01N2291/02863Y10T436/22
    • A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.
    • 一种氢传感器,其包括例如通过金属有机化学气相沉积(MOCVD)或物理气相沉积(PVD)形成在薄板结构上的薄膜传感器元件。 薄膜传感器元件包括与氢可逆地相互作用的氢相互作用金属膜的膜,以提供相对改变的响应特性,例如光透射率,电导率,电阻,电容,磁电阻,光电导等等 在不存在氢气的情况下对膜的响应特性。 氢相互作用金属膜可以用薄膜氢可渗透阻挡层进行外涂,以保护氢相互作用膜免受与非氢物质的有害相互作用。 本发明的氢传感器可有效地用于在易于入侵或产生氢的环境中检测氢气,并且可以方便地配置为手持设备。
    • 5. 发明授权
    • Digital chemical vapor deposition (CVD) method for forming a
multi-component oxide layer
    • 用于形成多组分氧化物层的数字化学气相沉积(CVD)方法
    • US5972430A
    • 1999-10-26
    • US979465
    • 1997-11-26
    • Frank DiMeo, Jr.Steven M. BilodeauPeter C. Van Buskirk
    • Frank DiMeo, Jr.Steven M. BilodeauPeter C. Van Buskirk
    • C23C16/40C23C16/44C23C16/455
    • C23C16/409C23C16/45531
    • A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate. The oxidant reactant source material is introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material.
    • 一种用于形成多组分氧化物层的化学气相沉积(CVD)方法。 首先提供化学气相沉积(CVD)反应室。 然后在化学气相沉积(CVD)反应器室内定位一个衬底。 然后在衬底上形成多组分氧化物前体层。 多组分氧化物前体层由不存在氧化剂反应物源材料的至少第一前体反应物源材料和同时引入化学气相沉积(CVD)反应器室的第二前体反应物源材料形成。 然后在化学气相沉积(CVD)反应器室内用氧化剂反应物源材料氧化形成在衬底上的多组分氧化物前体层,以形成在衬底上形成的多组分氧化物层。 在不存在第一前体反应物源材料和第二前体反应物源材料的情况下,氧化剂反应物源材料被引入到化学气相沉积(CVD)反应器室中。