专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06440863B1 Plasma etch method for forming patterned oxygen containing plasma etchable layer 有权
标题翻译：用于形成图案化含氧等离子体可刻蚀层的等离子体蚀刻方法
公开(公告)号：US06440863B1
公开(公告)日：2002-08-27
申请号：US09148556
申请日：1998-09-04
申请人： Chia-Shiun Tsai , Chao-Cheng Chen , Hun-Jan Tao
发明人： Chia-Shiun Tsai , Chao-Cheng Chen , Hun-Jan Tao
IPC分类号： H01L21302
CPC分类号： H01L21/7681 , H01L21/31116 , H01L21/31138 , H01L21/76808 , H01L2221/1031 , H01L2221/1036
摘要： A method for forming a patterned oxygen containing plasma etchable layer. There is first provided a substrate. There is then formed upon the substrate a blanket oxygen containing plasma etchable layer. There is then formed upon the blanket oxygen containing plasma etchable layer a blanket hard mask layer. There is then formed upon the blanket hard mask layer a patterned photoresist layer. There is then etched while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer the blanket hard mask layer to form a patterned hard mask layer. There is then etched while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer the blanket oxygen containing plasma etchable layer to form a patterned oxygen containing plasma etchable layer. The second plasma etch method employs a second etchant gas composition comprising: (1) an oxygen containing etchant gas which upon plasma activation provides an active oxygen etching species; and (2) boron trichloride.
摘要翻译：一种用于形成图案化含氧等离子体可刻蚀层的方法。首先提供基板。然后在衬底上形成包含氧气的等离子体可蚀刻层。然后在橡皮布含氧等离子体可蚀刻层上形成橡皮布硬掩模层。然后在橡皮布硬掩模层上形成图案化的光致抗蚀剂层。然后蚀刻，同时采用第一等离子体蚀刻方法结合图案化的光致抗蚀剂层作为第一蚀刻掩模层，橡皮布硬掩模层以形成图案化的硬掩模层。然后蚀刻，同时采用第二等离子体蚀刻方法结合至少图案化的硬掩模层作为第二蚀刻掩模层，该覆盖氧含氧等离子体可蚀刻层以形成图案化的含氧等离子体可蚀刻层。第二等离子体蚀刻方法采用第二蚀刻剂气体组合物，其包括：（1）含氧蚀刻剂气体，其在等离子体激活时提供活性氧蚀刻物质; 和（2）三氯化硼。

IPRDB

热门服务

关于我们

友情链接

联系方式