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1. 发明授权

US09279956B2 Optical imaging lens and electronic device comprising the same 有权
标题翻译：光学成像透镜及其组成的电子设备
公开(公告)号：US09279956B2
公开(公告)日：2016-03-08
申请号：US14093533
申请日：2013-12-02
申请人： Chia-Cheng Lin , Ta-Cheng Fan
发明人： Chia-Cheng Lin , Ta-Cheng Fan
IPC分类号： G02B3/02 , G02B13/18 , G02B9/60 , G02B13/00 , G02B13/04 , H04N5/225
CPC分类号： G02B13/0045 , G02B9/60 , G02B13/04 , G02B13/18 , G02B27/0025 , H04N5/2252 , H04N5/2254
摘要： An optical imaging lens set includes a first lens element to a plastic fifth lens element from an object side toward an image side along an optical axis. The second lens element has an image-side surface with a convex portion in a vicinity of its periphery. The fourth lens element has an image-side surface with a concave portion in a vicinity of the optical axis and a convex portion in a vicinity of its periphery.
摘要翻译：光学成像透镜组包括沿着光轴从物体侧朝向像侧的塑料第五透镜元件的第一透镜元件。第二透镜元件具有在其周边附近具有凸部的图像侧表面。第四透镜元件具有在光轴附近具有凹部的像侧表面和其周边附近的凸部。

2. 发明授权

US09276380B2 Spontaneous and stimulated emission control using quantum-structure lattice arrays 有权
标题翻译：使用量子结构晶格阵列的自发和受激发射控制
公开(公告)号：US09276380B2
公开(公告)日：2016-03-01
申请号：US13632077
申请日：2012-09-30
申请人： Keh-Yung Cheng , Chien-Chia Cheng , Kuang-Chien Hsieh
发明人： Keh-Yung Cheng , Chien-Chia Cheng , Kuang-Chien Hsieh
IPC分类号： H01S5/34 , H01L33/04 , H01L33/06 , H01S5/10 , B82Y20/00 , H01S5/12 , B82Y40/00
CPC分类号： H01S5/34 , B82Y20/00 , B82Y40/00 , H01L33/04 , H01L33/06 , H01L2933/0083 , H01S5/105 , H01S5/1078 , H01S5/1228 , H01S5/3412
摘要： A device for controlling light emissions and a method for fabricating the device are disclosed herein. A quantum well of an active region of a semiconductor device may comprise a quantum structure lattice having lattice geometries that satisfies the Bragg condition, such that inter-quantum structure distance d between a first quantum structure and a second quantum structure within the quantum structure lattice is an integer multiple of a emission half wavelength mλo/2n, where m is an integer, λo is a wavelength in free space, and n is a refractive index of a cladding material of the quantum well.
摘要翻译：本文公开了一种用于控制发光的装置和用于制造该装置的方法。半导体器件的有源区的量子阱可以包括具有满足布拉格条件的晶格几何的量子结构晶格，使得量子结构晶格内的第一量子结构和第二量子结构之间的量子间结构距离d为发射半波长mλo/ 2n的整数倍，其中m是整数，λo是自由空间中的波长，n是量子阱的包层材料的折射率。

3. 发明授权

US09040393B2 Method of forming semiconductor structure 有权
标题翻译：形成半导体结构的方法
公开(公告)号：US09040393B2
公开(公告)日：2015-05-26
申请号：US13242090
申请日：2011-09-23
申请人： Liang-Gi Yao , Chia-Cheng Chen , Ta-Ming Kuan , Jeff J. Xu , Clement Hsingjen Wann
发明人： Liang-Gi Yao , Chia-Cheng Chen , Ta-Ming Kuan , Jeff J. Xu , Clement Hsingjen Wann
IPC分类号： H01L21/20 , H01L21/265 , H01L29/49 , H01L29/51 , H01L21/28 , H01L29/66 , H01L29/78
CPC分类号： H01L21/02661 , H01L21/26506 , H01L21/28088 , H01L21/28194 , H01L21/2822 , H01L21/823418 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833 , H01L29/7848
摘要： A method of forming a semiconductor device includes chemically cleaning a surface of a substrate to form a chemical oxide material on the surface. At least a portion of the chemical oxide material is removed at a removing rate of about 2 nanometer/minute (nm/min) or less. Thereafter, a gate dielectric layer is formed over the surface of the substrate.
摘要翻译：形成半导体器件的方法包括化学清洗衬底的表面以在表面上形成化学氧化物材料。化学氧化物材料的至少一部分以约2纳米/分钟（nm / min）或更小的去除速率除去。此后，在衬底的表面上形成栅极电介质层。

4. 发明授权

US08881066B2 Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device 有权
标题翻译：用于实现单鳍鳍状场效应晶体管（FinFET）器件的芯棒修改
公开(公告)号：US08881066B2
公开(公告)日：2014-11-04
申请号：US13339646
申请日：2011-12-29
申请人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
发明人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
IPC分类号： G06F17/50
CPC分类号： H01L21/823431 , G03F1/38 , G03F1/70 , G03F7/70425 , G03F7/70466 , H01L21/845
摘要： Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.
摘要翻译：公开了形成单个翅片状场效应晶体管（FinFET）器件的方法。一种示例性方法包括提供主掩模布局和修剪掩模布局以形成鳍状场效应晶体管（FinFET）器件的鳍，其中主掩模布局包括第一掩蔽特征，并且修剪蒙版布局包括第二掩蔽特征其限定至少两个鳍，所述第一掩蔽特征和所述第二掩蔽特征具有空间关系; 以及基于所述第一掩蔽特征和所述第二掩蔽特征之间的空间关系来修改所述主掩模布局，其中所述修改所述主掩模布局包括修改所述第一掩蔽特征，使得使用所述修改的主掩模布局形成单鳍FinFET器件和修剪蒙版布局。

5. 发明授权

US08853831B2 Interconnect structure and method for forming the same 有权
标题翻译：互连结构及其形成方法
公开(公告)号：US08853831B2
公开(公告)日：2014-10-07
申请号：US13460279
申请日：2012-04-30
申请人： Po-Cheng Shih , Yu-Yun Peng , Chia Cheng Chou , Joung-Wei Liou
发明人： Po-Cheng Shih , Yu-Yun Peng , Chia Cheng Chou , Joung-Wei Liou
IPC分类号： H01L23/58 , H01L23/52 , H01L21/768 , H01L21/02
CPC分类号： H01L21/76832 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/02304 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76835 , H01L21/76846 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A interconnect structure includes a conductive layer formed in a dielectric layer. An adhesion layer is formed between the dielectric layer and a substrate. The adhesion layer has a carbon content ratio greater than a carbon content ratio of the dielectric layer.
摘要翻译：互连结构包括形成在电介质层中的导电层。在介电层和基板之间形成粘附层。粘附层的碳含量比大于电介质层的碳含量比。

6. 发明授权

US08852576B2 Modified sodium iodide symporter proteins and uses thereof 有权
标题翻译：改性碘化钠同向转运蛋白及其用途
公开(公告)号：US08852576B2
公开(公告)日：2014-10-07
申请号：US12901096
申请日：2010-10-08
申请人： Tin-Yun Ho , Chien-Yun Hsiang , Shih-Lu Wu , Ji-An Liang , Chia-Cheng Li , Hsin-Yi Lo
发明人： Tin-Yun Ho , Chien-Yun Hsiang , Shih-Lu Wu , Ji-An Liang , Chia-Cheng Li , Hsin-Yi Lo
IPC分类号： A01N63/00 , A61K48/00 , C12N5/00 , C12N15/00 , C07K14/705
CPC分类号： C07K14/705
摘要： A modified sodium iodide symporter (NIS) protein is provided. The modified NIS protein comprises an amino acid sequence of SEQ ID NO.1 with the proviso that at least one amino acid residue within SEQ ID NO. 1 is changed. The modified NIS protein has an enhanced transport function, and the expression of the modified NIS protein in the cells results in higher intracellular levels of a substrate of a NIS protein than does the expression of the same amount of a wild-type NIS protein.
摘要翻译：提供了改进的碘化钠同向转运体（NIS）蛋白质。修饰的NIS蛋白包含SEQ ID NO.1的氨基酸序列，条件是SEQ ID NO：1中的至少一个氨基酸残基。 1更改。修饰的NIS蛋白具有增强的转运功能，并且修饰的NIS蛋白在细胞中的表达导致比相同量的野生型NIS蛋白的表达更高的NIS蛋白底物的细胞内水平。

7. 发明授权

US08759184B2 FinFETs and the methods for forming the same 有权
标题翻译： FinFET及其形成方法
公开(公告)号：US08759184B2
公开(公告)日：2014-06-24
申请号：US13346445
申请日：2012-01-09
申请人： Chia-Cheng Ho , Tzu-Chiang Chen , Yi-Tang Lin , Chih-Sheng Chang
发明人： Chia-Cheng Ho , Tzu-Chiang Chen , Yi-Tang Lin , Chih-Sheng Chang
IPC分类号： H01L21/336 , H01L29/76 , H01L29/66 , H01L29/78
CPC分类号： H01L29/7848 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66636 , H01L29/66795 , H01L29/785 , H01L29/7851
摘要： A method includes providing a plurality of semiconductor fins parallel to each other, and includes two edge fins and a center fin between the two edge fins. A middle portion of each of the two edge fins is etched, and the center fin is not etched. A gate dielectric is formed on a top surface and sidewalls of the center fin. A gate electrode is formed over the gate dielectric. The end portions of the two edge fins and end portions of the center fin are recessed. An epitaxy is performed to form an epitaxy region, wherein an epitaxy material grown from spaces left by the end portions of the two edge fins are merged with an epitaxy material grown from a space left by the end portions of the center fin to form the epitaxy region. A source/drain region is formed in the epitaxy region.
摘要翻译：一种方法包括提供彼此平行的多个半导体鳍片，并且包括两个边缘鳍片和两个边缘鳍片之间的中心鳍片。蚀刻两个边缘翅片中的每一个的中间部分，并且中心翅片不被蚀刻。栅极电介质形成在中心翅片的顶表面和侧壁上。在栅极电介质上形成栅电极。两个边缘翅片的端部和中心翅片的端部是凹进的。进行外延以形成外延区域，其中由两个边缘翅片的端部留下的空间生长的外延材料与从中心翅片的端部留下的空间生长的外延材料合并，形成外延地区。源极/漏极区域形成在外延区域中。

8. 发明授权

US08740527B2 Self-drilling wall anchor device 有权
标题翻译：自钻墙锚装置
公开(公告)号：US08740527B2
公开(公告)日：2014-06-03
申请号：US13547285
申请日：2012-07-12
申请人： Ming-Chia Cheng
发明人： Ming-Chia Cheng
IPC分类号： F16B13/06 , F16B13/00
CPC分类号： F16B13/003 , F16B13/061
摘要： A self-drilling wall anchor device comprises a threaded member having a first threaded section and a second threaded section that provide different diameters, and an outer sleeve having a through hole that provides connective first area, second area, and third area. A second area diameter of the second area is larger than a first diameter of the first threaded section but smaller than a second diameter of the second threaded section. A third area diameter of the third area is larger than the second area diameter of the second area. When the first threaded section and the second threaded section cooperate with the outer sleeve for drilling, the second threaded section blocks the second area and the third area. Arms of the outer sleeve warp and curl out of a gypsum object, not into the gypsum object. The present invention reaches a favorable gripping effect and a preferable anti-retracting performance.
摘要翻译：自钻井壁锚固装置包括具有提供不同直径的第一螺纹部分和第二螺纹部分的螺纹部件和具有提供连接第一区域，第二区域和第三区域的通孔的外部套筒。第二区域的第二区域直径大于第一螺纹部分的第一直径，但小于第二螺纹部分的第二直径。第三区域的第三区域直径大于第二区域的第二区域直径。当第一螺纹部分和第二螺纹部分与用于钻孔的外套管配合时，第二螺纹部分阻挡第二区域和第三区域。外套的臂扭曲并卷曲出石膏物体，不能进入石膏物体。本发明达到良好的夹持效果和优选的抗回缩性能。

9. 发明授权

US08699213B2 Electronic device with supporting stands 有权
标题翻译：带支架的电子设备
公开(公告)号：US08699213B2
公开(公告)日：2014-04-15
申请号：US12765125
申请日：2010-04-22
申请人： Wean-Fong Loi , Hung-Hsiang Chen , Chia-cheng Shih , Alec Wong , Hsien-Chih Wu , Chiu-Lang Huang
发明人： Wean-Fong Loi , Hung-Hsiang Chen , Chia-cheng Shih , Alec Wong , Hsien-Chih Wu , Chiu-Lang Huang
IPC分类号： G06F1/16 , H05K5/00 , H05K7/00
CPC分类号： F16M11/10 , F16M2200/08
摘要： An electronic device with supporting stands includes an input/output module, two stands and a limiter. The two stands are obliquely disposed on the back side of the input/output module. The stands are limited by the limiter to move synchronously. At the same time, the limiter has two slots penetrated by the stands to limit moving range for the stands. Then the stands are controlled to swing with an angle and finally the visual angle of the input/output module is varied in suitable range.
摘要翻译：具有支撑架的电子设备包括输入/输出模块，两个支架和限制器。两个支架倾斜地布置在输入/输出模块的背面。支架受限制器限制，以同步移动。同时，限位器有两个插槽穿过插槽，以限制展台的移动范围。然后将支架以一定的角度控制摆动，最后输入/输出模块的视角在适当的范围内变化。

10. 发明申请

US20130276039A1 CHARACTERISTIC KARAOKE VOD SYSTEM AND OPERATING PROCESS THEREOF 审中-公开
标题翻译：特征卡拉OK VOD系统及其操作过程
公开(公告)号：US20130276039A1
公开(公告)日：2013-10-17
申请号：US13523810
申请日：2012-06-14
申请人： TSE - MING CHANG , Shih- Chia Cheng , Kai-Yin Cheng
发明人： TSE - MING CHANG , Shih- Chia Cheng , Kai-Yin Cheng
IPC分类号： H04N21/232 , H04N21/437
CPC分类号： G10H1/365 , G06F16/78 , G10H2240/075 , G10H2240/105 , G10H2240/125
摘要： A characteristic karaoke video-on-demand (VOD) system with a reference index database is provided. According to the reference index database as well as a song request signal inputted by a user, the characteristic karaoke VOD system is able to recommend at least one artist or at least one song to the user to enhance convenience and functionality offered by the characteristic karaoke VOD system.
摘要翻译：提供了具有参考索引数据库的特色卡拉OK视频点播（VOD）系统。根据参考索引数据库以及由用户输入的歌曲请求信号，特征卡拉OK VOD系统能够向用户推荐至少一个艺术家或至少一首歌曲，以增强特征卡拉OK VOD提供的方便性和功能性系统。

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