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    • 2. 发明申请
    • SUPERCOOLING APPARATUS
    • 超级装置
    • US20120011861A1
    • 2012-01-19
    • US13143020
    • 2010-01-06
    • Cheol-Hwan Kim
    • Cheol-Hwan Kim
    • F25B49/00
    • A23L3/363F25D29/00F25D2700/122
    • The present invention relates to a supercooling apparatus which can reduce a deviation of energy applied to a stored object. The supercooling apparatus includes a storage room provided in a storing unit where the cooling is performed and having a storing space therein to store or receive an object, a heat source supply unit installed in the storage room and supplying heat to the storing space or generating heat in the storing space; a temperature sensing unit sensing the temperature of the storing space or the stored object, and a control unit operating the heat source supply unit based on the temperature sensed by the temperature sensing unit to enable an upper portion of the storing space to have a temperature higher than a temperature of the maximum ice crystal formation zone, such that the storing space or the stored object is maintained in a supercooled state at a temperature below the maximum ice crystal formation zone, the control unit supplying or generating heat over a given magnitude during the supercooled-state control.
    • 本发明涉及一种可以减少施加到存储物体上的能量偏差的过冷却装置。 过冷却装置包括设置在存储单元中的存储室,其中执行冷却并且具有存储空间以存储或接收物体;热源供应单元,安装在储藏室中并向存储空间供热或产生热量 在储存空间; 感测存储空间或存储对象的温度的温度检测单元,以及基于由温度检测单元感测的温度来操作热源供应单元的控制单元,以使得存储空间的上部具有更高的温度 比最大冰晶形成区域的温度高,使得储存空间或储存物体在低于最大冰晶形成区域的温度下保持在过冷状态,所述控制单元在 过冷状态控制。
    • 4. 发明申请
    • METHOD OF MANUFACTURING AN INSTANT PULSE FILTER USING ANODIC OXIDATION AND INSTANT PULSE FILTER MANUFACTURED BY SAID METHOD
    • 使用阳极氧化制造瞬时脉冲滤波器的方法和由方法制造的瞬时脉冲滤波器
    • US20110133854A1
    • 2011-06-09
    • US13057493
    • 2009-04-03
    • Hak Beom MoonJin Hyung ChoSuc Hyun BangCheol Hwan KimYoon Hyung Jang
    • Hak Beom MoonJin Hyung ChoSuc Hyun BangCheol Hwan KimYoon Hyung Jang
    • H03H7/00C23C28/00
    • H01C7/108H01C7/10H01C7/12Y10S977/932Y10T29/41
    • The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side of an insulator substrate; a second step for forming an aluminum oxide thin film layer having a pore by oxidizing the aluminum thin film layer by means of an anodic oxidation; a third step for depositing a metallic material on an upper side of the aluminum thin film layer for filling the pore; a fourth step for forming a nano rod in the interior of the aluminum oxide thin film layer by eliminating the metallic material deposited except in the pore; a fifth step for forming an internal electrode on an upper side of the aluminum oxide thin film layer having the nano rod; a sixth step for forming a protective film layer on an upper side of the same in order to protect the aluminum oxide thin film layer and the internal electrode from the external environment; and a seventh step for forming an external electrode on both sides of the substrate in which the protective film layer is formed.
    • 根据本发明的瞬时脉冲滤波器,其可能导致半导体器件的故障或短寿命,使用铝阳极氧化制成,包括:第一步骤,用于在上部形成铝薄膜层 绝缘体基板; 通过阳极氧化氧化铝薄膜层来形成具有孔的氧化铝薄膜层的第二步骤; 第三步骤,用于在用于填充孔的铝薄膜层的上侧上沉积金属材料; 第四步,通过除去除了孔之外沉积的金属材料,在氧化铝薄膜层的内部形成纳米棒; 在具有纳米棒的氧化铝薄膜层的上侧形成内部电极的第五步骤; 为了保护氧化铝薄膜层和内部电极免受外部环境的影响,在其上侧形成保护膜层的第六步骤; 以及在其上形成有保护膜层的基板的两侧上形成外部电极的第七步骤。