专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08234079B2 Method and/or apparatus of oligonucleotide design and/or nucleic acid detection 失效
标题翻译：寡核苷酸设计和/或核酸检测的方法和/或装置
公开(公告)号：US08234079B2
公开(公告)日：2012-07-31
申请号：US11990290
申请日：2006-08-08
申请人： Christopher Wing Cheong Wong , Wing-Kin Sung , Charlie Lee , Lance David Miller
发明人： Christopher Wing Cheong Wong , Wing-Kin Sung , Charlie Lee , Lance David Miller
IPC分类号： G06F19/00 , G06F15/00 , G11C17/00 , C12N15/11
CPC分类号： C12Q1/6813 , G06F19/20
摘要： It is provided a method of designing at least one oligonucleotide for nucleic acid detection comprising the following steps in any order: (I) identifying and/or selecting region(s) of at least one target nucleic acid to be amplified, the region(s) having an efficiency of amplification (AE) higher than the average AE; and (II) designing at least one oligonucleotide capable of hybridizing to the selected region(s). It is also provided a method of detecting at least one target nucleic acid comprising the steps of: (i) providing at least one biological sample; (ii) amplifying nucleic acid(s) comprised in the biological sample; (iii) providing at least one oligonucleotide capable of hybridizing to at least one target nucleic acid, if present in the biological sample; and (iv) contacting the oligonucleotide(s) with the amplified nucleic acids and detecting the oligonucleotide(s) hybridized to the target nucleic acid(s). In particular, the method is for detecting the presence of at least one pathogen, for example a virus, in at least one human biological sample. The probes may be placed on a support, for example a microarray.
摘要翻译：提供了设计用于核酸检测的至少一种寡核苷酸的方法，其包括以下步骤：（I）鉴定和/或选择待扩增的至少一种靶核酸的区域，所述区域）具有高于平均AE的放大效率（AE）; 和（II）设计至少一种能够与所选择的区域杂交的寡核苷酸。还提供了检测至少一种靶核酸的方法，包括以下步骤：（i）提供至少一种生物样品; （ii）扩增生物样品中包含的核酸; （iii）提供至少一种能够与至少一种靶核酸杂交的寡核苷酸，如果存在于生物样品中; 和（iv）使寡核苷酸与扩增的核酸接触并检测与靶核酸杂交的寡核苷酸。特别地，该方法用于在至少一种人类生物样品中检测至少一种病原体，例如病毒的存在。探针可以放置在载体上，例如微阵列。

2. 发明申请

US20070042388A1 Method of probe design and/or of nucleic acids detection 审中-公开
标题翻译：探针设计方法和/或核酸检测方法
公开(公告)号：US20070042388A1
公开(公告)日：2007-02-22
申请号：US11202023
申请日：2005-08-12
申请人： Christopher Wong , Wing-Kin Sung , Charlie Lee , Lance Miller
发明人： Christopher Wong , Wing-Kin Sung , Charlie Lee , Lance Miller
IPC分类号： C12Q1/68 , G06F19/00
CPC分类号： C12Q1/6813 , G16B25/00
摘要： It is provided a method of designing oligonucleotide probe(s) for nucleic acid detection comprising the following steps in any order: (i) identifying and selecting region(s) of a target nucleic acid to be amplified, the region(s) having an efficiency of amplification (AE) higher than the average AE; and (ii) designing oligonucleotide probe(s) capable of hybridizing to the selected region(s). It is also provided a method of detecting at least one target nucleic acid comprising the steps of: (i) providing a biological sample; (ii) amplifying the nucleic acid(s) of the biological sample; (iii) providing at least an oligonucleotide probe capable of hybridizing to at least a target nucleic acid, if present in the biological sample; and (iv) contacting the probe(s) with the amplified nucleic acids and detecting the probe(s) hybridized to the target nucleic acid(s). In particular, the method indicates the presence of at least a pathogen, for example a virus, in a human biological sample. The probes may be placed on a support, for example a microarray or a biochip.
摘要翻译：提供了设计用于核酸检测的寡核苷酸探针的方法，其包括以下步骤：（i）鉴定和选择待扩增的靶核酸的区域，所述区域具有放大效率（AE）高于平均AE; 和（ii）设计能够与所选择的区域杂交的寡核苷酸探针。还提供了检测至少一种靶核酸的方法，包括以下步骤：（i）提供生物样品; （ii）扩增生物样品的核酸; （iii）至少提供能够与生物样品中存在的至少靶核酸杂交的寡核苷酸探针; 和（iv）使探针与扩增的核酸接触并检测与靶核酸杂交的探针。特别地，该方法表明在人类生物样品中存在至少一种病原体，例如病毒。探针可以放置在载体上，例如微阵列或生物芯片。

3. 发明申请

US20050239286A1 TWO-STEP STRIPPING METHOD FOR REMOVING VIA PHOTORESIST DURING THE FABRICATION OF PARTIAL-VIA DUAL DAMASCENE FEATURES 审中-公开
标题翻译：两步法剥离方法，用于通过双组分特征的部分制备过程中的光电离子
公开(公告)号：US20050239286A1
公开(公告)日：2005-10-27
申请号：US10904151
申请日：2004-10-27
申请人： Chih-Ning Wu , Wen-Liang Lien , Charlie Lee , Meiling Li
发明人： Chih-Ning Wu , Wen-Liang Lien , Charlie Lee , Meiling Li
IPC分类号： H01L21/02 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31138 , H01L21/76811
摘要： A two-step stripping method for removing via photoresist during the fabrication of trench-first partial-via dual damascene features is disclosed. In the first cleaning step, inert gas (He, Ar, N2)/fluorocarbon plasma is used to contact the remaining “Via Photo” for a short time period not exceeding 20 seconds. Thereafter, in the second cleaning step, a reducing plasma is used to completely strip the remaining “Via Photo”, thereby preventing the low-k or ultra low-k carbon-containing dielectric layer from potential carbon depletion.
摘要翻译：公开了在制造沟槽首先部分通孔双镶嵌特征期间通过光致抗蚀剂去除的两步剥离方法。在第一清洗步骤中，使用惰性气体（He，Ar，N 2 N 2）/氟碳等离子体与剩余的“通孔照片”接触不超过20秒的短时间。此后，在第二清洗步骤中，使用还原等离子体来完全剥离剩余的“通孔照片”，从而防止低k或超低k含碳介质层潜在的碳消耗。

4. 发明授权

US06799907B2 Plasma enhanced method for increasing silicon-containing photoresist selectivity 失效
标题翻译：用于增加含硅光刻胶选择性的等离子体增强方法
公开(公告)号：US06799907B2
公开(公告)日：2004-10-05
申请号：US10346470
申请日：2003-01-16
申请人： Francis Ko , Sandy Chen , Charlie Lee
发明人： Francis Ko , Sandy Chen , Charlie Lee
IPC分类号： G03D500
CPC分类号： H01L21/0274 , G03F7/40 , H01L21/31144
摘要： Provided is a method for increasing an etching selectivity of photoresist material. The method initiates with providing a substrate with a developed photoresist layer. The developed photoresist layer on the substrate is formulated to contain a hardening agent. Next, the substrate is exposed to a gas, where the gas is formulated to interact with the hardening agent. A portion of the developed photoresist layer is then converted to a hardened layer where the hardened layer is created by an interaction of the hardening agent with the gas. Some notable advantages of the discussed methods of increasing the selectivity of a photoresist include improved etch profile control. Additionally, by combining fabrication steps such as the hardening of the photoresist in an etch chamber, downstream etching processes may be performed without having to transfer the wafer to an additional chamber, thereby improving wafer throughput while minimizing handling.
摘要翻译：提供了增加光致抗蚀剂材料的蚀刻选择性的方法。该方法开始于提供具有显影的光致抗蚀剂层的基底。将显影的光致抗蚀剂层配制成含有硬化剂。接下来，将基底暴露于气体，其中配制气体以与硬化剂相互作用。然后将显影的光致抗蚀剂层的一部分转化为硬化层，其中硬化层通过硬化剂与气体的相互作用产生。所讨论的增加光致抗蚀剂选择性的方法的一些显着优点包括改进的蚀刻轮廓控制。另外，通过组合诸如在蚀刻室中的光致抗蚀剂的硬化的制造步骤，可以执行下游蚀刻工艺，而不必将晶片转移到附加的室，从而在最小化处理的同时提高晶片产量。

5. 发明申请

US20190231020A1 HARDHAT SPEAKERS 审中-公开
公开(公告)号：US20190231020A1
公开(公告)日：2019-08-01
申请号：US16256867
申请日：2019-01-24
申请人： Charlie Lee Jordan
发明人： Charlie Lee Jordan
IPC分类号： A42B3/30 , H04R1/02 , H04R1/34
CPC分类号： A42B3/306 , H04R1/026 , H04R1/028 , H04R1/345 , H04R2420/07
摘要： Apparatus and associated methods relate to a wireless audio speaker module configured to play music at a volume level that will not disturb those nearby, based on adapting a wireless audio speaker to be retained within headgear, adjusting the volume of sound emitted by the speaker to a level that will not disturb those nearby, and amplifying the speaker sound as a function of the headgear interior reflecting the sound emitted by the speaker to the user's ear. In an illustrative example, an airgap may be configured between the speaker and the headgear user's ear. In various embodiments, the sound volume emitted by the speaker may be adjusted to avoid disturbing those nearby. In some examples, the headgear may be a hardhat, advantageously configured with a wireless audio speaker module to permit construction workers to listen to music amplified by reflection within their hardhats without disturbing or distracting each other.

6. 发明授权

US831229A Railway-switch mechanism. 失效
公开(公告)号：US831229A
公开(公告)日：1906-09-18
申请号：US1906321254
申请日：1906-06-11
申请人： KEE CHARLIE LEE
发明人： KEE CHARLIE LEE
CPC分类号： B61L11/02

7. 发明授权

US10413011B2 Hardhat speakers 有权
公开(公告)号：US10413011B2
公开(公告)日：2019-09-17
申请号：US16256867
申请日：2019-01-24
申请人： Charlie Lee Jordan
发明人： Charlie Lee Jordan
IPC分类号： A42B3/30 , H04R1/02 , H04R1/34
摘要： Apparatus and associated methods relate to a wireless audio speaker module configured to play music at a volume level that will not disturb those nearby, based on adapting a wireless audio speaker to be retained within headgear, adjusting the volume of sound emitted by the speaker to a level that will not disturb those nearby, and amplifying the speaker sound as a function of the headgear interior reflecting the sound emitted by the speaker to the user's ear. In an illustrative example, an airgap may be configured between the speaker and the headgear user's ear. In various embodiments, the sound volume emitted by the speaker may be adjusted to avoid disturbing those nearby. In some examples, the headgear may be a hardhat, advantageously configured with a wireless audio speaker module to permit construction workers to listen to music amplified by reflection within their hardhats without disturbing or distracting each other.

8. 发明申请

US20120303403A1 INTERACTIVE, REAL-TIME SYSTEM AND METHOD FOR MONITORING PROFESSIONAL FEES 审中-公开
标题翻译：互动，实时系统和监控专业费用的方法
公开(公告)号：US20120303403A1
公开(公告)日：2012-11-29
申请号：US13472652
申请日：2012-05-16
申请人： Charlie LEE , Robert Moore
发明人： Charlie LEE , Robert Moore
IPC分类号： G06Q10/06
CPC分类号： G06Q30/04 , G06Q50/18
摘要： A real-time billing monitoring system and method. A processor receiving time data with respect to a task. The time data measures an amount of work accruing by one or more staff members toward completion of the task as the task is being performed. The processor generates a graphical object representing the time data as the task is being performed. The object is displayed on a display device concurrently with the performance of the task.
摘要翻译：实时计费监控系统及方法。处理器接收关于任务的时间数据。时间数据衡量一个或多个工作人员在执行任务时完成任务所产生的工作量。当执行任务时，处理器生成表示时间数据的图形对象。对象与任务的执行同时显示在显示设备上。

9. 发明申请

US20070072095A1 Apparatus and method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity 审中-公开
标题翻译：氩等离子体诱导紫外光固化步骤用于提高含硅光刻胶选择性的装置和方法
公开(公告)号：US20070072095A1
公开(公告)日：2007-03-29
申请号：US11606526
申请日：2006-11-29
申请人： Francis Ko , Richard Chen , Charlie Lee
发明人： Francis Ko , Richard Chen , Charlie Lee
IPC分类号： G03B27/42 , G03F1/00
CPC分类号： G03F7/40 , G03F7/075 , G03F7/094
摘要： Provided is a method and apparatus for increasing an etching selectivity of photoresist material. An exemplary method initiates with providing a substrate with a developed photoresist layer. The developed photoresist layer on the substrate includes polymer chains containing silicon. Next, the substrate and developed photoresist layer are exposed to an ultraviolet (UV) light, where the UV light emanates from a UV generating agent. A portion of the developed photoresist layer is then converted to a hardened layer where the hardened layer is created by cross-linking the polymer chains containing silicon and the cross-linking is activated by the UV light. Next an etch may be performed on the substrate using the hardened layer.
摘要翻译：提供了一种提高光致抗蚀剂材料的蚀刻选择性的方法和装置。提供一种示例性方法，其中提供具有显影的光致抗蚀剂层的基底。基底上显影的光致抗蚀剂层包括含硅的聚合物链。接下来，将基板和显影的光致抗蚀剂层暴露于紫外线（UV）光，其中UV光从UV产生剂发出。然后将显影的光致抗蚀剂层的一部分转化为硬化层，其中通过交联含有硅的聚合物链产生硬化层，并且交联通过UV光活化。接下来，可以使用硬化层在衬底上进行蚀刻。

10. 发明授权

US06541361B2 Plasma enhanced method for increasing silicon-containing photoresist selectivity 失效
标题翻译：用于增加含硅光刻胶选择性的等离子体增强方法
公开(公告)号：US06541361B2
公开(公告)日：2003-04-01
申请号：US09894649
申请日：2001-06-27
申请人： Francis Ko , Sandy Chen , Charlie Lee
发明人： Francis Ko , Sandy Chen , Charlie Lee
IPC分类号： H01L214763
CPC分类号： H01L21/0274 , G03F7/40 , H01L21/31144
摘要： Provided is a method for increasing an etching selectivity of photoresist material. The method initiates with providing a substrate with a developed photoresist layer. The developed photoresist layer on the substrate is formulated to contain a hardening agent. Next, the substrate is exposed to a gas, where the gas is formulated to interact with the hardening agent. A portion of the developed photoresist layer is then converted to a hardened layer where the hardened layer is created by an interaction of the hardening agent with the gas. Some notable advantages of the discussed methods of increasing the selectivity of a photoresist include improved etch profile control. Additionally, by combining fabrication steps such as the hardening of the photoresist in an etch chamber, downstream etching processes may be performed without having to transfer the wafer to an additional chamber, thereby improving wafer throughput while minimizing handling.
摘要翻译：提供了增加光致抗蚀剂材料的蚀刻选择性的方法。该方法开始于提供具有显影的光致抗蚀剂层的基底。将显影的光致抗蚀剂层配制成含有硬化剂。接下来，将基底暴露于气体，其中配制气体以与硬化剂相互作用。然后将显影的光致抗蚀剂层的一部分转化为硬化层，其中硬化层通过硬化剂与气体的相互作用产生。所讨论的增加光致抗蚀剂选择性的方法的一些显着优点包括改进的蚀刻轮廓控制。另外，通过组合诸如在蚀刻室中的光致抗蚀剂的硬化的制造步骤，可以执行下游蚀刻工艺，而不必将晶片转移到附加的室，从而在最小化处理的同时提高晶片产量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式