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    • 4. 发明授权
    • Diamond-like carbon for ion milling magnetic material
    • 用于离子研磨磁性材料的类金刚石碳
    • US5658470A
    • 1997-08-19
    • US571395
    • 1995-12-13
    • Allan E. SchultzL. Vincent RuscelloWilliam H. Nunne
    • Allan E. SchultzL. Vincent RuscelloWilliam H. Nunne
    • C23F4/00G11B5/31B44C1/22C23F1/00
    • C23F4/00G11B5/3163G11B5/3116
    • A diamond-like carbon mask is formed on the surface of the magnetic material for ion-milling the magnetic material into a magnetic pole of a transducer. The mask is formed by depositing a layer of diamond-like carbon over the magnetic material. Successive layers of photoresist, SiO.sub.2 and photoresist are applied over the magnetic material. The second layer of photoresist is patterned in the shape of the pole being formed. The exposed insulating layer is etched with an etchant that does not attack the diamond-like carbon, the exposed portions of the photoresist are exposed and removed, and the exposed portion of the diamond-like carbon is etched with an oxygen etchant. The remaining photoresist is washed away to remove the remaining insulating material. In one form of the invention, a layer of SiO.sub.2 may additionally be formed over the diamond-like carbon to protect the diamond-like carbon from being affected by any undercut of the photoresist by the oxygen etchant. The SiO.sub.2 layer is etched prior to etching the diamond-like carbon. The mask is used to ion mill the magnetic material to the desired pole.
    • 在磁性材料的表面上形成类金刚石碳掩模,用于将磁性材料离子研磨成换能器的磁极。 掩模通过在磁性材料上沉积一层类金刚石碳而形成。 光致抗蚀剂,SiO 2和光致抗蚀剂的连续层被施加在磁性材料上。 第二层光致抗蚀剂被图案化成形成的极的形状。 暴露的绝缘层用不侵蚀类金刚石碳的蚀刻剂蚀刻,光刻胶的暴露部分被暴露和去除,并且用氧蚀刻剂蚀刻类金刚石碳的暴露部分。 洗去剩余的光致抗蚀剂以除去剩余的绝缘材料。 在本发明的一种形式中,还可以在类金刚石碳之上形成SiO 2层,以保护类金刚石碳免受氧蚀刻剂的光刻胶的任何底切的影响。 在蚀刻类金刚石碳之前蚀刻SiO 2层。 该掩模用于将磁性材料离子研磨到所需的极点。
    • 8. 发明授权
    • MR element-to-contact alignment test structure
    • MR元件对接触对准测试结构
    • US5390420A
    • 1995-02-21
    • US198946
    • 1994-02-18
    • Allan E. Schultz
    • Allan E. Schultz
    • G01B7/31G01R33/09G01C15/00
    • G01R33/09G01B7/31
    • A device and method for determining alignment accuracy between magnetoresistive elements and contacts of magnetoresistive heads formed on a wafer are disclosed. A first alignment test structure is defined using a first photomask. The first alignment test structure is formed from a first material having a first characteristic sheet resistivity. A second alignment test structure is defined using a second photomask. The second alignment test structure is formed from a second material having a second characteristic sheet resistivity lower than the first characteristic sheet resistivity. The second alignment test structure is formed in contact with the first alignment test structure. A resistance value is dependent upon the first and second characteristic sheet resistivities and upon alignment between the first alignment test structure and the second alignment test structure such that changes in alignment between the first and second alignment test structures result in changes in the resistance value. Changes in the resistance value are indicative of changes in alignment between magnetoresistive elements and contacts formed on the wafer.
    • 公开了一种用于确定磁阻元件和形成在晶片上的磁阻头的触点之间的对准精度的装置和方法。 使用第一光掩模来定义第一对准测试结构。 第一对准测试结构由具有第一特征薄片电阻率的第一材料形成。 使用第二光掩模来定义第二对准测试结构。 第二对准测试结构由具有低于第一特征薄片电阻率的第二特征薄片电阻率的第二材料形成。 第二对准测试结构形成为与第一对准测试结构接触。 电阻值取决于第一和第二特征片电阻率,以及第一对准测试结构和第二对准测试结构之间的对准,使得第一和第二对准测试结构之间的对准变化导致电阻值的变化。 电阻值的变化表示磁阻元件和形成在晶片上的触点之间的对准变化。