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    • 8. 发明授权
    • Nano wire based passive pixel image sensor
    • 基于纳米线的无源像素图像传感器
    • US08384007B2
    • 2013-02-26
    • US12575221
    • 2009-10-07
    • Young-June YuMunib Wober
    • Young-June YuMunib Wober
    • H01L31/00
    • H01L27/14607H01L27/1461H01L27/14612H01L27/14643
    • An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.
    • 一种成像装置,包括适合于成像尺寸小于500nm的小物体的多个光敏元件。 每个光敏元件形成无源像素,其包括至少一个纳米线结构的光电检测器和开关晶体管。 纳米线结构光电检测器被配置为接收光子并存储光产生的电荷并且表现为波导。 开关晶体管形成在衬底中或在纳米线的同一体上,并且被配置为允许纳米线中的光致发光电荷在关闭时积聚,并且在开启时从纳米线排出。 像素阵列被配置为通过以一分钱圆形图案布置来允许高分辨率成像。