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US08440558B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08440558B2
公开(公告)日：2013-05-14
申请号：US12991012
申请日：2010-09-16
申请人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L29/772
CPC分类号： H01L29/66575 , H01L21/28079 , H01L21/28088 , H01L21/76897 , H01L23/485 , H01L29/66545
摘要： There is provided a semiconductor device and a method of fabricating the same. The method comprises: providing a semiconductor substrate; forming a transistor structure on the semiconductor substrate, wherein the transistor structure comprises a gate region and a source/drain region, and the gate region comprises a gate dielectric layer provided on the semiconductor substrate and a sacrificial gate formed on the gate dielectric layer; depositing a first interlayer dielectric layer, and planarizing the first interlayer dielectric layer to expose the sacrificial gate; removing the sacrificial gate to form a replacement gate hole; forming first contact holes at positions corresponding to the source/drain region in the first interlayer dielectric layer; and filling a first conductive material in the first contact holes and the replacement gate hole respectively to form first contacts and a replacement gate, wherein the first contacts come into contact with the source/drain region. Thereby, the replacement gate and the first contacts can be made in one same step of depositing the same material, and thus the process flows are simplified.
摘要翻译：提供了一种半导体器件及其制造方法。该方法包括：提供半导体衬底; 在所述半导体衬底上形成晶体管结构，其中所述晶体管结构包括栅极区域和源极/漏极区域，并且所述栅极区域包括设置在所述半导体衬底上的栅极介电层和形成在所述栅极电介质层上的牺牲栅极; 沉积第一层间介电层，平面化第一层间电介质层以暴露牺牲栅极; 去除牺牲栅极以形成替换门孔; 在与所述第一层间电介质层中的所述源极/漏极区对应的位置处形成第一接触孔; 以及分别在所述第一接触孔和所述替换栅极孔中填充第一导电材料以形成第一触点和替换栅极，其中所述第一触点与所述源极/漏极区域接触。因此，可以在沉积相同材料的同一步骤中制造更换栅极和第一触点，从而简化了工艺流程。

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