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    • 9. 发明授权
    • MEMS 공진기 및 그 제조방법
    • MEMS谐振器及其制造方法
    • KR101280349B1
    • 2013-07-01
    • KR1020120020757
    • 2012-02-29
    • 국방과학연구소
    • 임근배성중우석세영이상우
    • B81C1/00H01P7/00
    • PURPOSE: A microelectromechanical system (MEMS) resonator with high performance and a manufacturing method thereof are provided to manufacture the MEMS resonator of high performance by using mechanical properties of quartz while simplifying a complex structure by using silicon and quartz. CONSTITUTION: An MEMS resonator manufacturing method comprises the following steps: a step (S10) for forming a silicon resonator structure with a resonator boundary structure, which is separated from a resonator mass while a cavity is arranged between the resonator mass and the resonator boundary structure, on a silicon substrate; a step (S20) for bonding the silicon substrate, where the silicon resonator structure is formed, with a quartz substrate; a step (S30) of forming a beam-shaped elastic unit which connects a silicon resonator boundary structure and a silicon resonator mass across to the cavity by patterning the quartz substrate; and a step (S40) for performing a chemical mechanical polishing (CMP) process and an etching process for opening the cavity from the rear surface of the silicon substrate. [Reference numerals] (S10) Step of processing a silicon substrate; (S20) Step of bonding the silicon substrate and a quartz substrate; (S30) Step of processing the quartz substrate; (S40) Step of progressing additional processes
    • 目的:提供一种具有高性能的微机电系统(MEMS)谐振器及其制造方法,以通过使用石英的机械性能来制造高性能的MEMS谐振器,同时通过使用硅和石英简化复杂结构。 构成:MEMS谐振器制造方法包括以下步骤:步骤(S10),用于形成具有共振器边界结构的硅谐振器结构,该谐振器边界结构与谐振器块分离,同时空腔布置在谐振器块与谐振器边界结构之间 ,在硅衬底上; 用于将形成硅谐振器结构的硅衬底与石英衬底接合的步骤(S20); 形成通过图案化石英衬底而将硅谐振器边界结构和硅谐振器块连接到空腔的波束形弹性单元的步骤(S30); 以及用于执行化学机械抛光(CMP)工艺的步骤(S40)和用于从硅衬底的后表面打开空腔的蚀刻工艺。 (附图标记)(S10)处理硅衬底的步骤; (S20)接合硅基板和石英基板的工序; (S30)处理石英基板的工序; (S40)进行附加处理的步骤