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1. 发明公开

KR1020150015920A 자기 메모리 장치 및 그 제조 방법 审中-实审
标题翻译：磁性随机访问存储器件及其制造方法
公开(公告)号：KR1020150015920A
公开(公告)日：2015-02-11
申请号：KR1020130091970
申请日：2013-08-02
申请人： 삼성전자주식회사
发明人： 김대식
IPC分类号： G11C11/15 , H01L27/115 , H01L21/8247
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08 , G11C11/15 , H01L27/222 , Y10S977/935
摘要： 자기 메모리 장치 제조 방법에서, 기판 상에 자기 터널 접합(MTJ) 구조물을 형성하고, 자기 터널 접합(MTJ) 소자를 커버하는 금속막을 형성한 후, 금속막을 산화 및 불화하여 보호막을 형성한다. 금속막을 산화시킴으로써 보호막이 절연성을 가질 수 있으며, 이때 불화 공정을 함께 수행함으로써, MTJ 구조물 내의 자유층이 산화되지 않을 수 있다.
摘要翻译：本发明涉及一种磁存储器件制造方法。该方法包括以下步骤：在衬底上形成磁隧道结（MTJ）结构; 形成覆盖MJT元件的金属膜; 并通过氧化和氟化金属膜形成保护层。本发明可以通过氧化金属膜并同时进行氟化处理来实现绝缘保护层，以防止MTJ结构中的柔性层被氧化。

2. 发明公开

KR1020140025166A 수직 자기터널접합을 구비하는 자기 메모리 장치들 审中-实审
标题翻译：磁性记忆装置具有普遍的磁性隧道结
公开(公告)号：KR1020140025166A
公开(公告)日：2014-03-04
申请号：KR1020120091484
申请日：2012-08-21
申请人： 삼성전자주식회사
发明人： 오세충 , 김기웅 , 김영현 , 김환균 , 박상환
IPC分类号： G11C11/15 , H01L27/115 , H01L21/8247
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/15 , H01L27/222 , H01L43/08 , H01L43/12 , Y10S977/935
摘要： Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a fixed layer structure, and a tunnel barrier which is formed between the free layer structure and the fixed layer structure. The fixed layer structure includes a first magnetic layer with an internal perpendicular magnetization feature, a second magnetic layer with the internal horizontal magnetization feature, and an exchange combination layer which is interposed between the first magnetic layer and the second magnetic layer. At this time, the magnetization direction of the second magnetic layer is vertical by antiferromagnetic combination with the first magnetic layer through the exchange combination layer. The exchange combination layer is formed with a thickness to maximize the antiferromagnetic combination between the first magnetic layer and the second magnetic layer.
摘要翻译：提供了具有垂直磁性隧道结的磁存储器件。该装置包括形成在自由层结构和固定层结构之间的包括自由层结构，固定层结构和隧道势垒的磁隧道结。固定层结构包括具有内部垂直磁化特征的第一磁性层，具有内部水平磁化特征的第二磁性层以及置于第一磁性层和第二磁性层之间的交换组合层。此时，通过与第一磁性层通过交换组合层的反铁磁组合，第二磁性层的磁化方向是垂直的。交换组合层形成为使第一磁性层和第二磁性层之间的反铁磁性组合最大化的厚度。

3. 发明公开

KR1020140008105A 열적으로 안정한 자기터널접합 셀 및 이를 포함하는 메모리 소자 审中-实审
标题翻译：包含其中的热稳定磁性连接单元和存储器件
公开(公告)号：KR1020140008105A
公开(公告)日：2014-01-21
申请号：KR1020120075180
申请日：2012-07-10
申请人： 삼성전자주식회사
发明人： 이성철 , 김광석 , 김기원 , 장영만 , 피웅환
IPC分类号： G11C11/15 , H01L27/115 , H01L21/8247
CPC分类号： H01L29/82 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01F10/32 , Y10S977/935
摘要： Disclosed are a thermally stable perpendicular magnetic anisotropy magnetic tunneling junction cell and a magnetic memory device including the same. The magnetic tunneling junction cell according to one embodiment of the present invention includes a pinned layer which has a pinned magnetization direction, a separating layer which is arranged on the pinned layer, and a free layer which is arranged on the separating layer and has a variable magnetization direction. Wherein, the pinned layer and the separating layer are made of magnetic materials with perpendicular magnetic anisotropy. Also, the free layer includes a central part and a peripheral part around the central part. The thickness of the central part is thicker than the thickness of the peripheral part to have a convex shape.
摘要翻译：公开了一种热稳定的垂直磁各向异性磁隧道结单元和包括该垂直磁各向异性磁隧道结单元的磁存储器件。根据本发明的一个实施例的磁隧道结单元包括具有钉扎磁化方向的钉扎层，布置在被钉扎层上的分离层和布置在分离层上并具有可变的自由层磁化方向。其中，被钉扎层和分离层由具有垂直磁各向异性的磁性材料制成。此外，自由层包括围绕中心部分的中心部分和周边部分。中心部分的厚度比周边部分的厚度厚，以具有凸形。

4. 发明授权

KR101187831B1 다수의 자구들을 갖는 자기 턴넬 접합 셀 有权
标题翻译：磁性隧道连接电池，包括多个磁畴
公开(公告)号：KR101187831B1
公开(公告)日：2012-10-05
申请号：KR1020107019094
申请日：2009-01-28
申请人： 퀄컴 인코포레이티드
发明人： 리,시아
IPC分类号： G11C11/15 , G11C11/16 , H01L27/115
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1675 , H01L43/08 , Y10S977/935
摘要： 특정 실시예에서, 기판의 표면에 실질적으로 수직으로 연장하는 다수의 측벽들을 갖는 MTJ 셀을 포함하는 자기 턴넬 접합(MTJ) 구조가 개시되어 있다. 상기 다수의 측벽들의 각각은 고유한 자구(magnetic domain)를 소지하는(carry) 자유층을 포함한다. 고유한 자구들 각각은 디지털 값을 저장하도록 조정된다.

5. 发明公开

KR1020110008553A 반도체 메모리 장치 및 그 제조 방법 无效
标题翻译：半导体存储器件及其形成方法
公开(公告)号：KR1020110008553A
公开(公告)日：2011-01-27
申请号：KR1020090065952
申请日：2009-07-20
申请人： 삼성전자주식회사
发明人： 윤홍식 , 조금석 , 백인규 , 심현준 , 박민영
IPC分类号： H01L27/115
CPC分类号： H01L21/8229 , H01L27/224 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/145 , Y10S977/935
摘要： PURPOSE: A semiconductor memory device and a method of forming the same are provided to implement a high integration semiconductor memory device by connecting a nano-tube as a mechanical switch to a memory cell. CONSTITUTION: A second wire(16a) is crossed with a first wire(5). A resistance change part(10) is arranged at an intersecting point of the first wire and the second wire and electrically connects them. The mechanical switch is interposed between the resistance change part and the second wire while including a nano-tube.
摘要翻译：目的：提供半导体存储器件及其形成方法，通过将作为机械开关的纳米管连接到存储单元来实现高集成半导体存储器件。构成：第二线（16a）与第一线（5）交叉。电阻变化部（10）被布置在第一线和第二线的交叉点处并将它们电连接。机械开关插入在电阻变化部和第二线之间，同时包括纳米管。

6. 发明公开

KR1020100138791A 메모리 无效
标题翻译：记忆
公开(公告)号：KR1020100138791A
公开(公告)日：2010-12-31
申请号：KR1020100059031
申请日：2010-06-22
申请人： 소니 주식회사
发明人： 카노히로시 , 히고유타카 , 야마모토테츠야 , 오오모리히로유키 , 호소미마사노리 , 쿠스노키신이치로 , 오이시유키 , 야마네카즈타카 , 벳쇼카즈히로 , 이카라시미노루
IPC分类号： G11C11/15 , G11C17/00
CPC分类号： H01L43/08 , G11C11/005 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/16 , G11C29/50 , G11C2029/4402 , Y10S977/935
摘要： PURPOSE: A memory is provided to reduce manufacturing costs by implementing a RAM and a ROM by using the same structure storage device. CONSTITUTION: A magnetization free layer(18) can reverse a magnetization direction. A tunnel barrier layer(17) is made of an insulator. A plurality of memory devices are composed of a tunneling magnetoresistance element. A random access memory region records information by using the magnetization direction of the magnetization free layer of a memory device. A magnetic pinned layer(13) is arranged after the tunnel barrier layer.
摘要翻译：目的：通过使用相同的结构存储设备实现RAM和ROM，提供了一个内存来降低制造成本。构成：无磁化层（18）可以反转磁化方向。隧道阻挡层（17）由绝缘体制成。多个存储器件由隧道磁阻元件组成。随机存取存储器区域通过使用存储器件的磁化自由层的磁化方向来记录信息。在隧道势垒层之后设置磁性钉扎层（13）。

7. 发明公开

KR1020080089189A 자기저항 효과 소자 및 이를 이용한 자기저항 랜덤 액세스메모리 无效
标题翻译：磁阻效应元件和磁阻随机存取存储器
公开(公告)号：KR1020080089189A
公开(公告)日：2008-10-06
申请号：KR1020080026038
申请日：2008-03-20
申请人： 가부시끼가이샤 도시바
发明人： 요시까와마사또시 , 기따가와에이지 , 가이다다시 , 나가세도시히꼬 , 기시다쯔야 , 요다히로아끼
IPC分类号： G11B5/39 , G11C11/15
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistance effect element and a magnetoresistive random access memory using the same are provided to perform magnetization reversal with low electric current in the magnetoresistive random access memory. A magnetoresistance effect element comprises a first magnetic layer(3), a second magnetic layer(2), and a first spacer layer(4). The first magnetic layer has an invariable magnetization direction. The second magnetic layer having a variable magnetization direction includes at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from the group consisting of V, Cr, and Mn. The first spacer layer, which is formed between the first magnetic layer and the second magnetic layer, is made of a nonmagnetic material. The bidirectional electric current, which flows through the first magnetic layer, the first spacer layer, and the second magnetic layer, changes the magnetization direction of the second magnetic layer.
摘要翻译：磁阻效应元件和使用其的磁阻随机存取存储器被提供以在磁阻随机存取存储器中执行低电流的磁化反转。磁阻效应元件包括第一磁性层（3），第二磁性层（2）和第一间隔层（4）。第一磁性层具有不变的磁化方向。具有可变磁化方向的第二磁性层包括从由Fe，Co和Ni组成的组中选择的至少一种元素，选自由Ru，Rh，Pd，Ag，Re，Os，Ir ，Pt和Au，以及选自V，Cr和Mn中的至少一种元素。形成在第一磁性层和第二磁性层之间的第一间隔层由非磁性材料制成。流过第一磁性层，第一间隔层和第二磁性层的双向电流改变第二磁性层的磁化方向。

8. 发明公开

KR1020080082141A 반도체 메모리 장치 및 마그네토 논리 회로 有权
标题翻译：半导体存储器件和磁逻辑电路，根据输入值的大量逻辑状态的逻辑组合，选择磁感应电流方向
公开(公告)号：KR1020080082141A
公开(公告)日：2008-09-11
申请号：KR1020070022573
申请日：2007-03-07
申请人： 삼성전자주식회사
发明人： 김기원 , 조영진 , 신형순 , 좌성훈 , 이승준 , 황인준
IPC分类号： G11C11/15
CPC分类号： G11C11/1657 , G11C11/1659 , G11C11/1675 , Y10S977/935
摘要： A semiconductor memory device and a magneto-logic circuit are provided to change the direction of a magnetic induced current flowing in a magnetic induction layer according to logic combination of a plurality of input values. A current driving circuit(220) receives a plurality of input values, and changes the direction of a magnetic induction current according to logic combination of logic states of the input values. A magnetic induction layer(210) induces magnetism with different direction according to the direction of the magnetic induction current. A resistance change device(230) has different resistances according to the direction of magnetism induced by the magnetic induction layer. The current driving circuit receives three input values, and changes the direction of the magnetic induction current, according to the logic combination of the three input values.
摘要翻译：提供半导体存储器件和磁逻辑电路，以根据多个输入值的逻辑组合来改变在磁感应层中流动的磁感应电流的方向。电流驱动电路（220）接收多个输入值，并根据输入值的逻辑状态的逻辑组合改变磁感应电流的方向。磁感应层（210）根据磁感应电流的方向，引导不同方向的磁性。电阻变化装置（230）根据由磁感应层引起的磁性方向具有不同的电阻。电流驱动电路根据三个输入值的逻辑组合接收三个输入值，并改变磁感应电流的方向。

9. 发明公开

KR1020080033957A 자기 터널 접합 센서 无效
标题翻译：磁性隧道接头传感器
公开(公告)号：KR1020080033957A
公开(公告)日：2008-04-17
申请号：KR1020087002294
申请日：2006-07-24
申请人： 에버스핀 테크놀러지스, 인크.
发明人： 정,영서 , 바이르드,로버트,더블유. , 엥겔,브레들리,엔.
IPC分类号： G11B5/127 , H01L27/115 , G11C11/15
CPC分类号： G01R33/06 , H01L43/12 , G11C11/16 , H01L27/222 , Y10S977/935
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus (130) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes (36,38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和装置。该装置（130）包括一个磁性隧道结（MTJ）[32]和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧穿传导。第一磁极的自旋轴被固定，第二磁极具有自由轴。磁场源比第一磁极更靠近第二磁极。通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

10. 发明公开

KR1020150037047A 전자 장치 및 그 제조 방법 审中-实审
标题翻译：电子设备及其制造方法
公开(公告)号：KR1020150037047A
公开(公告)日：2015-04-08
申请号：KR1020130116253
申请日：2013-09-30
申请人： 에스케이하이닉스 주식회사
发明人： 하가영
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L43/02 , G11C11/161 , G11C13/0004 , G11C13/0007 , H01L43/08 , H01L43/12 , H01L45/06 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/16 , H01L45/1675 , H01L45/04 , H01L27/2409 , H01L45/146 , H01L45/147 , Y10S977/935
摘要： 반도체장치및 그제조방법이제공된다. 본발명의일 실시예에따른반도체장치는, 기판상에형성된가변저항패턴; 및상기가변저항패턴측벽에형성되고, 불순물이함유된절연막이적어도두층이상적층된다층보호막을포함하고,상기가변저항패턴에서멀어질수록상기불순물이함유된절연막내불순물농도가증가하는반도체장치가제공한다.
摘要翻译：提供一种电子设备及其制造方法。根据本发明的实施例的半导体器件包括：形成在衬底上的可变电阻图案; 以及形成在可变电阻图案的侧壁上的多层保护膜，并且其中堆积有至少两个含有杂质的电介质膜。提供了随着越来越远离可变电阻图案，电介质膜中杂质浓度增加的半导体器件。

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