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    • 1. 发明公开
    • 탄성파 장치
    • 弹性波装置
    • KR1020170000772A
    • 2017-01-03
    • KR1020160072563
    • 2016-06-10
    • 가부시키가이샤 무라타 세이사쿠쇼
    • 야스다준페이
    • H03H9/64H03H9/25H03H9/02
    • H03H9/02992H03H9/02543
    • 압전기판에있어서분극반전이발생하기어려워, 삽입손실의증대를억제할수 있는탄성파장치를제공한다. 탄성파장치(1)는압전기판(2)과, 압전기판(2)의제1 주면(2a) 상에형성되어있는제1, 제2 IDT 전극(3A, 3B)과, 제1, 제2 IDT 전극(3A, 3B)에각각접속되어있는복수의전극랜드를구비한다. 압전기판(2)의제1, 제2 변부분(2a1, 2a2)은압전기판(2)의법선방향및 분극축방향에직교하는방향으로연장되어있다. 제2 변부분(2a2)에있어서의압전기판(2)의분극축방향을따르는길이보다제1 변부분(2a1)에있어서의상기길이쪽이짧다. 제1 IDT 전극(3A)은제2 IDT 전극(3B)보다도제1 변부분(2a1)에가까운위치에배치되어있다. 복수의전극랜드는제1 IDT 전극(3A)의제1 버스바에제2 IDT 전극(3B)을개재하지않고접속되어있는제1 전극랜드(4A)와, 제1 버스바와동일전위인제2 전극랜드(4B)를갖는다.
    • 弹性波装置包括压电基板,第一主表面上的第一和第二IDT电极以及连接到第一和第二IDT电极之一的电极焊盘。 第一和第二侧部分在与偏振轴方向垂直或基本垂直的方向上延伸,并且垂直于压电基片的方向延伸。 压电基板沿第一侧部的偏振轴方向的长度比第二侧部的长度短。 第一IDT电极比第二IDT电极更靠近第一侧部分。 电极焊盘包括连接到第一IDT电极的第一母线的第一电极焊盘,而不插入第二IDT电极,第二电极焊盘处于与第一IDT电极的第一母线相同的电位。
    • 2. 发明公开
    • 표면파 장치 및 통신기
    • 表面声波设备和通信设备
    • KR1020030027794A
    • 2003-04-07
    • KR1020020058728
    • 2002-09-27
    • 가부시키가이샤 무라타 세이사쿠쇼
    • 이토요시히로가도타미치오후지모토고지
    • H03H9/25
    • H03H9/14552H03H9/02543H03H9/6496
    • PURPOSE: A surface acoustic wave device and a communication equipment are provided to be capable of restraining ripple and obtaining high impedance characteristic for increasing response level, reducing insertion loss, and improving the planarization of pass band. CONSTITUTION: A surface acoustic wave device is provided with a piezoelectric substrate(12), a comb shaped electrode formed at the peripheral portion of the piezoelectric substrate, and a plurality of surface acoustic wave reflecting surfaces(12a,12b) formed at the outer portion of the comb shaped electrode. At this time, the distance(L) between the second electrode pattern(13b) and the surface acoustic wave reflecting surface, is obtained from an equation of '(N +5/8) λs ≤ L≤ (N +7/8) λs.
    • 目的:提供表面声波装置和通信设备以能够抑制纹波并获得高阻抗特性以增加响应水平,减少插入损耗,并改善通带的平坦化。 构成:表面声波装置设置有压电基板(12),形成在压电基板的周边部分的梳状电极和形成在外部的多个表面声波反射面(12a,12b) 的梳状电极。 此时,从(N + 5/8)λs≤L≤(N + 7/8)的方程求出第二电极图案(13b)与表面声波反射面之间的距离(L) λs的。
    • 9. 发明授权
    • 표면파 장치 및 통신기
    • 표면파장치및통신기
    • KR100465975B1
    • 2005-01-13
    • KR1020020058728
    • 2002-09-27
    • 가부시키가이샤 무라타 세이사쿠쇼
    • 이토요시히로가도타미치오후지모토고지
    • H03H9/25
    • H03H9/14552H03H9/02543H03H9/6496
    • A Shear Horizontal-type end-surface-reflection-type surface acoustic wave device includes a piezoelectric substrate having end surfaces. The most appropriate positions of the end surfaces of the piezoelectric substrate are determined. Interdigital transducers are disposed on the main surface of the piezoelectric substrate having a comparatively low relative dielectric constant ∈11 (for example, a relative dielectric constant of about 40 or less). The positions of the end surfaces are determined so that the distance from the center of the second electrode finger, counting from the outermost side in the surface acoustic wave propagation direction among the interdigital transducers, to the end surfaces (end surfaces for reflecting the surface acoustic wave) of the piezoelectric substrate satisfy the relationship (N+5/8)lambdas
    • 剪切水平型端面反射型表面声波装置包括具有端面的压电基片。 确定压电基片端面的最合适的位置。 叉指式换能器设置在具有较低相对介电常数&amp; isin; 11 T(例如,约40或更小的相对介电常数)的压电基片的主表面上。 确定端面的位置,使得从叉指式换能器中弹性表面波传播方向上的最外侧算起的第二电极指的中心到端面(用于反射表面声波的端面) (N + 5/8)lambda <= L <=(N + 7/8)lambda,其中lambda是表面声波的波长,并且N是0或正整数 。
    • 10. 发明公开
    • 표면 미세 가공된 음향파 압전 광석
    • 表面微机械声波压电晶体
    • KR1020010013019A
    • 2001-02-26
    • KR1019997010993
    • 1998-02-04
    • 시티에스 코포레이션
    • 보작,브루스양,지아쉬후앙,진매트슨,존
    • H03H9/13
    • H03H9/02543
    • A high frequency acoustic wave piezoelectric device (10) having parallel etched channels cut into a surface of a piezoelectric substrate so as to form micromachined ridges (20). Top electrodes (30) are located on tops (26) of the ridges (20) and bottom electrodes (32) are located on bottoms of the channels in spacings (22) between ridges (20). The top and bottom electrodes (30, 32) are offset from each other and substantially non- opposing. The electrodes (30, 32) generate a sufficient vertical electrical field (38) when driven to cause the ridges (20) to resonate. A height (28) of the ridges (20) define the operating frequency. The ridges (20) can be made small enough to produce frequencies well over 100 MHz in a fundamental bulk acoustic wave mode.
    • 具有平行蚀刻通道的高频声波压电器件(10)切割成压电基片的表面以形成微加工脊(20)。 顶部电极(30)位于脊部(20)的顶部(26)上,底部电极(32)位于脊部(20)之间的间隔(22)的通道的底部。 顶部和底部电极(30,32)彼此偏移并且基本上不相对。 当被驱动以使脊(20)谐振时,电极(30,32)产生足够的垂直电场(38)。 脊(20)的高度(28)限定工作频率。 脊(20)可以制成足够小以在基本体声波模式下产生超过100MHz的频率。