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1. 发明授权

KR101857160B1 반도체 레이저 및 그의 제조방법 有权
公开(公告)号：KR101857160B1
公开(公告)日：2018-05-15
申请号：KR1020110136674
申请日：2011-12-16
申请人： 한국전자통신연구원
发明人： 김인규 , 김경옥 , 김상훈 , 주지호 , 장기석
IPC分类号： H01S5/10
CPC分类号： H01S5/021 , H01S3/0637 , H01S5/0205 , H01S5/026 , H01S5/028 , H01S5/1032 , H01S5/125 , H01S5/2272 , H01S5/3027
摘要： 본발명은반도체레이저제조방법을제공한다. 상기방법은선택된영역내에만레이저발진을위한게르마늄단결정막을선택적에피성장방법으로형성되도록하여, 패브리페로양단의표면거칠기를최소화하도록하고, 반도체레이저제작공정에서절단및 연마공정필요없도록한다.

2. 发明公开

KR1020000008519A 지에이엔(GAN) 반도체 레이저 다이오드 및 그 제조방법 有权
标题翻译： GAN半导体激光二极管及其制作方法
公开(公告)号：KR1020000008519A
公开(公告)日：2000-02-07
申请号：KR1019980028370
申请日：1998-07-14
申请人： 주식회사 엘지이아이
发明人： 김욱 , 유태경
IPC分类号： H01S5/30
CPC分类号： H01S5/02 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/10 , H01S5/0205 , H01S5/32341 , H01S2304/12
摘要： PURPOSE: A gallium nitride semiconductor laser diode is provided to simplify fabrication process and improve reliability by skipping a dry etching process. CONSTITUTION: The diode comprises a semiconductor electrode layer, formed on a substrate, having a groove of a constant depth therein; a first conductive nitride semiconductor layer, extending from a side of the internal groove, formed on a partial portion of a first external conductive nitride semiconductor electrode layer; a first conductive clad layer, an active layer, a second conductive clad layer, a second conductive nitride semiconductor electrode layer sequentially formed on the first conductive nitride semiconductor layer; and electrodes formed on the first and the second conductive nitride semiconductor electrode layers, respectively.
摘要翻译：目的：提供氮化镓半导体激光二极管，通过跳过干蚀刻工艺来简化制造工艺并提高可靠性。构成：二极管包括形成在基板上的半导体电极层，其中具有恒定深度的凹槽; 形成在第一外部导电氮化物半导体电极层的部分部分上的从内部沟槽侧延伸的第一导电氮化物半导体层; 依次形成在第一导电氮化物半导体层上的第一导电覆盖层，有源层，第二导电覆盖层，第二导电氮化物半导体电极层; 以及形成在第一和第二导电氮化物半导体电极层上的电极。

3. 发明公开

KR1020070092030A 레이저 다이오드 및 그 제조방법 失效
标题翻译：激光二极管及其制造方法
公开(公告)号：KR1020070092030A
公开(公告)日：2007-09-12
申请号：KR1020060021929
申请日：2006-03-08
申请人： 엘지전자 주식회사
发明人： 최윤호
IPC分类号： H01S5/22
CPC分类号： H01S5/2216 , H01S5/0205 , H01S5/1237
摘要： A laser diode and a manufacturing method thereof are provided to improve the thermal-stress resistant property of the laser diode by effectively radiating the heat from an activation layer through a metal layer and to improve the reliability of laser diode. Plural grooves are formed at a lower portion of a substrate. A metal layer fills in the plural grooves and is formed at the lower portion of the substrate. An n-contact layer(121) is formed on the substrate. A portion of the n-contact layer is etched to a predetermined depth. An n-electrode(140b) is formed on the etched portion on the n-contact layer. An n-cladding layer(122) is formed on the rest portion of the n-contact layer. A thin structure is formed on the n-cladding layer and contains an n-transport layer, an activation layer, an electron blocking layer, and a p-transport layer. A p-cladding layer(127) is formed on the p-transport layer and contains a ridge on an upper portion thereof. A p-contact layer(128) is formed on the ridge of the p-cladding layer. An insulation film(130) is formed to enclose an exposed surface of the p-cladding layer and an external surface of the p-contact layer. An insulation film includes an aperture for exposing the p-contact layer. A p-electrode(140a) fills in the aperture of the insulation film and is electrically connected to the p-contact layer.
摘要翻译：提供一种激光二极管及其制造方法，通过有效地通过金属层辐射活化层的热量，提高激光二极管的耐热性，提高激光二极管的可靠性。多个槽形成在基板的下部。金属层填充在多个槽中并形成在基板的下部。在基板上形成n接触层（121）。 n接触层的一部分被蚀刻到预定深度。 n电极（140b）形成在n接触层上的蚀刻部分上。 n包覆层（122）形成在n接触层的其余部分上。在n包层上形成薄的结构，并且包含n-传输层，活化层，电子阻挡层和p-传输层。在p-传输层上形成p包覆层（127），并在其上部包含脊。 p接触层（128）形成在p包覆层的脊上。形成绝缘膜（130）以包围p包覆层的露出表面和p接触层的外表面。绝缘膜包括用于露出p接触层的孔。 p电极（140a）填充绝缘膜的孔径并电连接到p接触层。

4. 发明公开

KR1020130069116A 반도체 레이저 및 그의 제조방법 审中-实审
标题翻译： SEMICONDUCTOR LASER AND METHOD OF FABRICATING THE SAME
公开(公告)号：KR1020130069116A
公开(公告)日：2013-06-26
申请号：KR1020110136674
申请日：2011-12-16
申请人： 한국전자통신연구원
发明人： 김인규 , 김경옥 , 김상훈 , 주지호 , 장기석
IPC分类号： H01S5/10
CPC分类号： H01S5/021 , H01S3/0637 , H01S5/0205 , H01S5/026 , H01S5/028 , H01S5/1032 , H01S5/125 , H01S5/2272 , H01S5/3027
摘要： PURPOSE: A semiconductor laser and a manufacturing method thereof are provided to grow a laser gain medium on a semiconductor substrate by a selective epitaxy method, thereby manufacturing the semiconductor laser without cutting or polishing both sides of a Fabry-Perot cavity. CONSTITUTION: A germanium monocrystal Fabry-Perot cavity is grown on a substrate by a selective epitaxy method. A spacer(31) is separated from one side of the Fabry-Perot cavity. An optical coupler(33) is separated from the other end of the Fabry-Perot cavity. The height of the top surface of the Fabry-Perot cavity is different from the height of the spacer or the optical coupler.
摘要翻译：目的：提供一种半导体激光器及其制造方法，以通过选择性外延法在半导体衬底上生长激光增益介质，从而制造半导体激光器而不切割或抛光法布里 - 珀罗腔的两侧。构成：通过选择性外延法在基底上生长锗单晶法布里 - 珀罗腔。间隔物（31）从法布里 - 珀罗腔的一侧分离。光耦合器（33）与法布里 - 珀罗腔的另一端分离。法布里 - 珀罗腔的上表面的高度不同于间隔物或光耦合器的高度。

5. 发明公开

KR1020050103066A 반도체 레이저 소자 및 그 제조 방법 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：KR1020050103066A
公开(公告)日：2005-10-27
申请号：KR1020040028468
申请日：2004-04-24
申请人： 삼성전기주식회사
发明人： 조수행
IPC分类号： H01S5/30
CPC分类号： H01S5/3004 , H01S3/09415 , H01S5/0205
摘要： 반도체 레이저다이오드에 관해 개시된다. 본 발명의 레이저 소자는 기판에 대해 수직이 방향으로 연장되는 상호 나란한 경면을 가지며, 활성층은 양측 경면 중 적어도 어느 하나의 가까운 부분에서 그 두께가 다른 부분에 비해 감소된 구조를 가진다. 이러한 본 발명에 따르면 경면에서의 광흡수가 감소되고 따라서 COD(Catastrophic Optical Damage)가 방지된다.

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