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    • 2. 发明授权
    • 수정판 제조방법
    • 制造水晶板的方法
    • KR100790751B1
    • 2008-01-02
    • KR1020060123285
    • 2006-12-06
    • 삼성전기주식회사
    • 이종필안정환
    • H03H9/19H01L41/02
    • H03H9/19H01L41/02H03H3/02
    • A method of manufacturing a crystal plate is provided to prevent the stress of the crystal plate due to a mechanical impact by forming inclined surfaces at both ends of the crystal plate through a chemical reaction. A method of manufacturing a crystal plate includes the steps of: preparing the chip-sized crystal plate having a first surface and a second surface opposite to the first surface; forming a metal film for a beveling process so as to expose some area of the first and second surfaces adjacent to both ends of the chip-sized crystal plate; and performing the beveling process by selectively etching the exposed crystal plate.
    • 提供一种制造晶体板的方法,以通过化学反应在晶体板的两端形成倾斜表面来防止由于机械冲击而引起的晶体板的应力。 制造晶体板的方法包括以下步骤:制备具有与第一表面相对的第一表面和第二表面的芯片尺寸的晶体板; 形成用于斜切处理的金属膜,以暴露与所述芯片尺寸的晶片的两端相邻的所述第一表面和所述第二表面的一些区域; 并通过选择性地蚀刻暴露的晶体板来进行斜面加工。
    • 4. 发明公开
    • 압전 변압기
    • 压电变压器
    • KR1020170026570A
    • 2017-03-08
    • KR1020177002816
    • 2015-07-10
    • 에프코스 아게
    • 될가스트,버나드퍼프,마커스쿠델라,파볼베일거니,마이클
    • H01F38/00H01L41/09H01L41/02H05H1/24
    • H05H1/2475H01L41/047H01L41/0533H01L41/107H05H2001/2481H01F38/00H01L41/02H01L41/09
    • 본발명은압전변압기(1)에관한것으로서, 상기변압기는종방향(L)으로입력영역(2)과출력영역(3)으로세분되어있으며, 이경우상기입력영역(2)에는전극(4)들과압전재료(5)가교대로쌓여있고, 그리고상기입력영역(2)의전극(4)들에는교류전압이인가될수 있으며, 이경우상기출력영역(3)은, 상기입력영역(2)에서교류전압이인가될때 전계형성을유발하는압전재료(9)를가지며, 이경우상기압전변압기(1)는, 상기입력영역(2)에서멀리떨어져있는출력측단부면(10)과종방향(L)으로뻗어있는측면에지(13)들을구비하고, 그리고이 경우상기압전변압기(1)는, 상기출력측단부면(10)에서원자또는분자를이온화하는동시에상기측면에지(13)들에서의원자또는분자의이온화는방지하도록설계되어있다.
    • 本发明涉及一种压电变压器(1),其在纵向方向(L)上分成输入区域(2)和输出区域(3),其中电极(4)和压电材料(5)交替 堆叠在输入区域(2)中,并且交流电压可以施加到输入区域(2)中的电极(4),其中输出区域(3)包括压电材料(9),其导致电气 在所述输入区域(2)中施加交流电压时,所述压电变压器(1)具有背离所述输入区域(2)的输出侧端面(10),以及横向边缘(13), 所述压电变压器(1)被设计成在所述输出侧端面(10)处离子化原子或分子,从而避免所述侧边缘(13)处的原子或分子离子化, 。
    • 6. 发明公开
    • 자기 센서 및 이의 제조 방법
    • 磁传感器及其生产方法
    • KR1020080109683A
    • 2008-12-17
    • KR1020080056029
    • 2008-06-13
    • 가부시키가이샤 리코
    • 아즈미주니치코우후토요시후세아키히로
    • G01R33/02G01R33/09H01L29/82
    • H01L41/02G01R33/0047G01R33/09H01L43/08H01L43/12
    • A magnetic sensor and a method of manufacture thereof is provided to improve productivity by authorizing magnetic field toward one direction while only once heating substrate. A magnetic sensor(1) comprises a substrate(4), and a plurality of sensor bridge circuits. A sensor bridge circuit includes a pair of magnetic field detectors(2A, 2B) and a pair of the fixed resistors(3A, 3B) which are arranged in the top of the substrate. A pair of magnetic field detectors and a pair of fixed resistors are connected in order to form the bridge circuit. Each magnetic field detector is formed of a magnetoresistance effect element. The magnetization direction of magnetic field detectors intersects in three dimensional space. The substrate has a plurality of inclines. A normal direction of incline intersects in three dimensional space. A pair of magnetic field detectors of each the sensor bridge circuit is arranged in an identical incline.
    • 提供磁传感器及其制造方法,以通过仅向一个方向授权磁场来提高生产率,同时仅加热基板一次。 磁传感器(1)包括基板(4)和多个传感器桥接电路。 传感器桥接电路包括一对磁场检测器(2A,2B)和一对固定电阻器(3A,3B),它们设置在基板的顶部。 连接一对磁场检测器和一对固定电阻器以形成桥接电路。 每个磁场检测器由磁阻效应元件形成。 磁场检测器的磁化方向与三维空间相交。 基板具有多个倾斜。 倾斜的正常方向在三维空间中相交。 每个传感器桥接电路的一对磁场检测器以相同的倾斜度布置。
    • 8. 发明公开
    • 체적탄성파 소자 및 그 제조방법
    • 大容量声波元件及其制作方法
    • KR1020040035488A
    • 2004-04-29
    • KR1020020064651
    • 2002-10-22
    • 쌍신전자통신주식회사이재빈김형준
    • 김형준이재빈김흥래여기봉이영수
    • H03H9/54
    • H03H9/54H01L41/02H03H3/08H03H9/25
    • PURPOSE: A bulk acoustic wave element and a fabricating method thereof are provided to improve c-axis orientation and resonant characteristic of a piezoelectric film by forming a thin bottom electrode on a silicon thermal oxide layer having a flat surface and forming the piezoelectric film thereon. CONSTITUTION: A bulk acoustic wave element includes a piezoelectric film(30), a sound reflection layer(10), a bottom electrode(20), and a top electrode(40). The piezoelectric film(30) is formed with a material having a piezoelectric characteristic. The piezoelectric film(30) is formed on a substrate(2). The sound reflection layer(10) is formed by depositing a silicon thermal oxide layer between the piezoelectric film and the substrate and removing the silicon thermal oxide layer. The bottom electrode(20) of a conductive material is formed on a bottom face of the piezoelectric film. The top electrode(40) of a conductive material is formed on a top face of the piezoelectric film.
    • 目的:提供一种体声波元件及其制造方法,以通过在具有平坦表面的硅热氧化物层上形成薄的底部电极并在其上形成压电膜来改善压电膜的c轴取向和谐振特性。 构成:体声波元件包括压电膜(30),声反射层(10),底电极(20)和顶电极(40)。 压电薄膜(30)由具有压电特性的材料形成。 压电膜(30)形成在基板(2)上。 声压反射层(10)通过在压电膜和衬底之间沉积硅热氧化物层并除去硅热氧化物层而形成。 导电材料的底部电极(20)形成在压电薄膜的底面上。 导电材料的顶部电极(40)形成在压电膜的顶面上。