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1. 发明授权

KR101117139B1 고순도 유기금속 화합물 및 이의 제조방법 有权
标题翻译：制备有机金属化合物的方法
公开(公告)号：KR101117139B1
公开(公告)日：2012-03-07
申请号：KR1020050081620
申请日：2005-09-02
申请人： 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
发明人： 세나이-캣케이트데오데이터비나약 , 아맘키얀아르타셰스
IPC分类号： C01G15/00 , C01G9/04 , C01G13/04
CPC分类号： C07F5/064 , C07F3/00 , C07F3/06 , C07F5/00 , C07F5/063 , C23C16/301
摘要： 실질적으로 순수하고 산화된(oxygenated) 불순물을 낮은 수준으로 함유하는 그룹 IIB 및 IIIB 금속의 유기금속 화합물이 제공된다. 또한 이러한 유기금속 화합물을 제조하는 방법이 제공된다.

2. 发明公开

KR1020020060200A 고에너지의 재충전형 전기화학 전지 비수성 전해질 无效
标题翻译：高能，可充电，电化学电池非水电解质
公开(公告)号：KR1020020060200A
公开(公告)日：2002-07-16
申请号：KR1020027004897
申请日：2000-10-17
申请人： 바 이란 유니버시티
发明人： 아우비치,도론 , 고퍼,요셉 , 쉐치터,알렉산더 , 존구아,루 , 지바르,사임
IPC分类号： C07F9/00 , H01M6/04 , H01M10/26
CPC分类号： C01G39/006 , C01G28/007 , C01G30/006 , C01P2002/85 , C01P2004/03 , C01P2004/32 , C01P2006/40 , C07F5/064 , H01M4/381 , H01M4/46 , H01M4/581 , H01M4/5815 , H01M6/164 , H01M10/0568 , H01M2300/0085
摘要： The present invention provides a non-aqueous electrolyte for use in an electrochemical cell comprising: (a) at least one organic solvent; (b) at least one electrolytically active salt represented by the formula: M'+ m(ZRnXq-n)m in which: M' is selected from a group consisting of magnesium, calcium, aluminum, lithium and sodium; Z is selected from a group consisting of aluminum, boron, phosphorus, antimony and arsenic; R represents radical selected from the following groups: alkyl, alkenyl, aryl, phenyl, benzyl, and amido; X is a halogen (I, Br, Cl, F); m=1-3; and n=0-5 and q=6 in the case of Z=phosphorus, antimony and arsenic, and n=0-3 and q=4 in the case of Z=aluminum and boron. Rechargeable, high energy density electrochemical cells containing an intercalation cathode, a metal anode, and an electrolyte of the above- described type are also disclosed.
摘要翻译：本发明提供一种用于电化学电池的非水电解质，包括：（a）至少一种有机溶剂; （b）由式：M'+ m（ZRnXq-n）m表示的至少一种电解活性盐，其中：M'选自镁，钙，铝，锂和钠; Z选自铝，硼，磷，锑和砷; R表示选自以下基团的基团：烷基，烯基，芳基，苯基，苄基和酰氨基; X是卤素（I，Br，Cl，F）; M = 1-3; 在Z =磷，锑和砷的情况下，n = 0-5且q = 6，在Z =铝和硼的情况下，n = 0-3和q = 4。还公开了含有插层阴极，金属阳极和上述类型的电解质的可充电的高能量密度电化学电池。

3. 发明公开

KR1020130009689A 유기금속 화합물의 정제방법 및 장치 审中-实审
标题翻译：有机化合物纯化和装置
公开(公告)号：KR1020130009689A
公开(公告)日：2013-01-23
申请号：KR1020120076612
申请日：2012-07-13
申请人： 다우 글로벌 테크놀로지스 엘엘씨
发明人： 모드트랜드커티스디. , 데이빗슨쳇디.
IPC分类号： B01D3/14 , C01F5/00 , C01G25/00 , B01J19/24
CPC分类号： C07F5/00 , B01D3/40 , C07B63/00 , C07F3/02 , C07F5/063 , C07F5/064 , C07F7/003
摘要： PURPOSE: A refinement process of an organic metal compound and an apparatus for the refinement process are provided to refine an organic metal compound using a stripping column and a gas stream and to remove impurities that are relatively volatile compared to an organic metal compound. CONSTITUTION: A refinement process of an organic metal compound comprises steps of: preparing an organic metal compound in a liquid phase, preparing a stripping column(10) that is equipped with a first part(12) and a second part(14), wherein the first part includes a first inlet(15) and a first outlet(16), and the second part includes a second inlet(25) and a second outlet(30), supplying the organic metal compound in a liquid phase to the first part of the stripping column through the first inlet, supplying a gas stream to the second part of the stripping column through the second inlet, inducing the organic metal compound to an opposite direction of the gas stream through the stripping column, and collecting the refined organic metal compound in a liquid phase from the second outlet. [Reference numerals] (AA) Gas
摘要翻译：目的：提供有机金属化合物的精制方法和精制方法的装置，以利用汽提塔和气流精制有机金属化合物，并除去与有机金属化合物相比易挥发的杂质。构成：有机金属化合物的精制方法包括以下步骤：制备液相中的有机金属化合物，制备装备有第一部分（12）和第二部分（14）的汽提塔（10），其中第一部分包括第一入口（15）和第一出口（16），第二部分包括第二入口（25）和第二出口（30），将液相中的有机金属化合物供应到第一部分通过第一入口提供汽提塔，通过第二入口将气流供应到汽提塔的第二部分，使有机金属化合物通过汽提塔与气流相反的方向，并收集精炼的有机金属从第二出口在液相中形成化合物。（附图标记）（AA）气体

4. 发明公开

KR1020030001435A 수소첨가된 게터 합금으로 유기금속 화합물 또는 이종원자유기 화합물을 정제하는 방법 无效
标题翻译：一种用氢化吸气剂合金净化有机金属化合物或杂原子有机化合物的方法
公开(公告)号：KR1020030001435A
公开(公告)日：2003-01-06
申请号：KR1020027014012
申请日：2001-04-13
申请人： 사에스 게터스 에스.페.아.
发明人： 베르가니,지오르지오 , 수찌,마르코
IPC分类号： B01D53/02
CPC分类号： B01D53/02 , B01D53/04 , B01D2256/12 , B01D2257/706 , B01D2257/80 , B01D2258/0216 , B01J20/02 , B01J20/18 , C07F1/00 , C07F1/005 , C07F3/00 , C07F3/10 , C07F5/00 , C07F5/063 , C07F5/064 , C07F5/065 , C07F5/066 , C07F7/003 , C07F7/006 , C07F7/2212 , C07F9/904 , C07F9/94 , C07F17/00 , C07F17/02 , C23C16/18 , C23C16/4402
摘要： 산소, 물 및 정제대상이 되는 유기금속 화합물 또는 이종원자 유기 화합물과 산소 및 물의 반응에 의해 유도되는 화합물에 대하여 유기금속 화합물 또는 이종원자 유기 화합물을 정제하는 방법으로서, 액체 상태 또는 순수한 증기 또는 캐리어 가스내의 증기 형태의 상기 정제될 유기금속 또는 이종원자 유기 화합물을 수소첨가된 게터 합금과 접촉시키는 공정을 포함하며, 선택적으로 상기 화합물을 다공성 지지부상의 팔라듐과 제오라이트상에 지지되는 철 및 망간의 혼합물 중에서 선택된 하나 이상의 가스 흡수 물질과 접촉시킨다.

5. 发明公开

KR1020110091460A 유기금속 화합물의 제조방법 无效
标题翻译：制备有机化合物的方法
公开(公告)号：KR1020110091460A
公开(公告)日：2011-08-11
申请号：KR1020110009601
申请日：2011-01-31
申请人： 롬 앤드 하아스 컴패니
发明人： 리피키프랜시스제이. , 셰나이-카트카테데오다타비나야크 , 마롤도스테펜지. , 웨어로버트에이.
IPC分类号： C07F7/30 , C07F7/20 , C07F3/06 , B01J19/00
CPC分类号： C07F7/30 , B01D2202/10 , B01J19/0053 , B01J19/0093 , C07F5/064
摘要： PURPOSE: A method for preparing metal amidinate compounds of ultra high purity using a microchannel device for synthesis is provided. CONSTITUTION: A method for preparing organic metal alkyl compounds of ultra high purity comprises a step of reacting a metal halide solution and an alkyl metal solution in a microchannel device. The metal halid is a group II, III, IV, or V metal. The metal halide is ZnCl_2, GaCl_3, InCl_3, InBr_3, InI_3, AlCl_3, GeCl_4, SiCl_4, SnCl_4, PCl_3, AsCl_3, SbCl_3, or BiCl_3. The alkyl metal solution contains trialkyl aluminum, organic magnesium halide, and organic lithium. The method additionally comprises a step of purifying the alkyl metal solution.
摘要翻译：目的：提供一种使用微通道装置进行合成制备超高纯度金属脒化合物的方法。构成：制备超高纯度有机金属烷基化合物的方法包括使金属卤化物溶液和烷基金属溶液在微通道器件中反应的步骤。金属卤化物是II，III，IV或V族金属。金属卤化物是ZnCl 2，GaCl 3，InCl 3，InBr 3，InI 3，AlCl 3，GeCl 4，SiCl 4，SnCl 4，PCl 3，AsCl 3，SbCl 3或BiCl 3。烷基金属溶液含有三烷基铝，有机卤化镁和有机锂。该方法还包括纯化烷基金属溶液的步骤。

6. 发明公开

KR1020040006005A 고에너지의 재충전형 전기화학 전지 无效
标题翻译：高能量，可充电电化学电池
公开(公告)号：KR1020040006005A
公开(公告)日：2004-01-16
申请号：KR1020037015707
申请日：2002-05-29
申请人： 바 이란 유니버시티
发明人： 아울바흐,도론 , 차시드,오리트 , 고퍼,요씨 , 기즈바,챠임
IPC分类号： H01M10/05
CPC分类号： H01M10/0568 , C01G28/007 , C01G30/006 , C01G39/006 , C01P2002/85 , C01P2004/03 , C01P2004/32 , C01P2006/40 , C07F5/064 , H01M4/381 , H01M4/46 , H01M4/581 , H01M4/5815 , H01M4/583 , H01M6/164 , H01M6/166 , H01M2300/0085
摘要： A solid, gel type non-aqueous electrolyte for use in an electrochemical cell, the electrolyte including: (a) at least one polymer compound; (b) at least one organic solvent, and (c) at least one electrolytically active salt represented by the formula: M'(ZRn Xq-n)m, in which: M' is selected from the group consisting of magnesium, calcium, and aluminum; Z is selected from the group consisting of aluminum, boron, phosphorous, antimony and arsenic; R represents radicals selected from the following groups: alkyl, alkenyl, aryl, phenyl, benzyl, and amido: X is a halogen (I, Br, Cl, F); m = 2-3; n = 0-5 and q = 6 for Z = phosphorous, antimony, and arsenic, and n = 0-3 and q = 4 for Z = aluminum and boron, wherein the polymer compound, organic solvent, and electrolytically active salt interact to form a non- aqueous electrolyte having a solid, gel type structure. The solid, gel type non-aqueous electrolyte is preferably incorporated into an electrochemical cell further including a metal anode and an intercalation cathode.
摘要翻译：一种用于电化学电池的固体，凝胶型非水电解质，所述电解质包括：（a）至少一种聚合物化合物; （b）至少一种有机溶剂，和（c）由式M'（ZRn Xq-n）m表示的至少一种电解活性盐，其中：M'选自镁，钙，和铝; Z选自铝，硼，磷，锑和砷; R代表选自以下基团的基团：烷基，烯基，芳基，苯基，苄基和酰胺基：X是卤素（I，Br，Cl，F）; m = 2-3; 对于Z =磷，锑和砷，n = 0-5和q = 6，对于Z =铝和硼，n = 0-3和q = 4，其中高分子化合物，有机溶剂和电解活性盐与形成具有固体，凝胶型结构的非水电解质。固体凝胶型非水电解质优选并入进一步包括金属阳极和嵌入阴极的电化学电池中。

7. 发明授权

KR101912111B1 유기금속 화합물의 정제방법 및 장치 有权
公开(公告)号：KR101912111B1
公开(公告)日：2018-10-26
申请号：KR1020120076612
申请日：2012-07-13
申请人： 다우 글로벌 테크놀로지스 엘엘씨
发明人： 모드트랜드커티스디. , 데이빗슨쳇디.
IPC分类号： B01D3/14 , C01F5/00 , C01G25/00 , B01J19/24
CPC分类号： C07F5/00 , B01D3/40 , C07B63/00 , C07F3/02 , C07F5/062 , C07F5/064 , C07F7/003
摘要： 스트리핑칼럼및 가스스트림을이용한조 유기금속화합물의정제방법이제공된다. 상기방법은유기금속화합물과비교하여상대적으로보다휘발성인불순물들을제거한다.

8. 发明公开

KR1020060050962A 고순도 유기금속 화합물 및 이의 제조방법 有权
标题翻译：制备有机金属化合物的方法
公开(公告)号：KR1020060050962A
公开(公告)日：2006-05-19
申请号：KR1020050081620
申请日：2005-09-02
申请人： 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
发明人： 세나이-캣케이트데오데이터비나약 , 아맘키얀아르타셰스
IPC分类号： C01G15/00 , C01G9/04 , C01G13/04
CPC分类号： C07F5/064 , C07F3/00 , C07F3/06 , C07F5/00 , C07F5/063 , C23C16/301
摘要： 실질적으로 순수하고 산화된(oxygenated) 불순물을 낮은 수준으로 함유하는 그룹 IIB 및 IIIB 금속의 유기금속 화합물이 제공된다. 또한 이러한 유기금속 화합물을 제조하는 방법이 제공된다.

9. 发明公开

KR1020010084386A 원자층 증착법을 이용한 알루미늄 산화막 형성 방법 无效
标题翻译：使用原子层沉积形成氧化铝膜的方法
公开(公告)号：KR1020010084386A
公开(公告)日：2001-09-06
申请号：KR1020000009396
申请日：2000-02-25
申请人： 삼성전자주식회사
发明人： 이병택 , 박인성 , 박흥수 , 박영욱
IPC分类号： C23C16/40
CPC分类号： C23C16/45553 , C07F5/064 , C23C16/403
摘要： PURPOSE: A method for forming an aluminum oxide film that can reduce impurities inside oxide film is provided, which is characterized in that an aluminum source consisting of DAMCl£Di-Methyl-Aluminum-Chloride (10): Al(CH3)2Cl|is introduced into a reaction chamber leading to chemical/physical adsorption before an oxygen source that is subject to undergo chemical exchange with the aluminum source is introduced into the reaction chamber to consequently form an aluminum oxide film on the surface of a semiconductor substrate. CONSTITUTION: The method for forming an aluminum oxide film using atomic layer deposition comprises the steps of chemically and physically adsorbing the aluminum source on a semiconductor substrate by infusing an aluminum source consisting of DAMCl£Di-Methyl-Aluminum-Chloride (10): Al(CH3)2Cl|into a reaction chamber; and chemically reducing the aluminum source and oxygen source by infusing an oxygen source consisting of ozone onto the chemically and physically aluminum source deposited semiconductor substrate (20), wherein the infusion of the aluminum source and oxygen source is performed at a temperature of 150 to 650 deg.C, and the method comprises the step of purging the reaction chamber with an inert gas (15) after the step of infusing the aluminum source.
摘要翻译：目的：提供一种能够减少氧化膜内的杂质的氧化铝膜的形成方法，其特征在于，由DAMCl二甲基氯化铝（10）：Al（CH 3）2 Cl |组成的铝源为在与铝源进行化学交换的氧源之前，将其引入到化学/物理吸附的反应室中，从而在半导体衬底的表面上形成氧化铝膜。构成：使用原子层沉积法形成氧化铝膜的方法包括以下步骤：通过注入由DAMC1·二甲基氯化铝（10）：Al组成的铝源，化学和物理地将铝源吸附在半导体衬底上（CH 3）2 Cl |进入反应室; 以及通过将由臭氧组成的氧源输入到化学和物理的铝源沉积半导体衬底（20）上来化学还原铝源和氧源，其中铝源和氧源的输入在150至650℃的温度下进行该方法包括在输入铝源的步骤之后用惰性气体（15）吹扫反应室的步骤。

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