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1. 发明公开

KR20120068357A Method of manufacturing semiconductor device 无效
标题翻译：制造半导体器件的方法
公开(公告)号：KR20120068357A
公开(公告)日：2012-06-27
申请号：KR20100129948
申请日：2010-12-17
申请人： TOSHIBA KK
发明人： SAWADA KANAKO , AOKI HIDEO , KOMUTA NAOYUKI , OGISO KOJI
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L2224/16225
摘要： PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a void generated from a solder bump after melting by meting the solder bump. CONSTITUTION: A second substrate(4) having a second solder bump(3) is laminated on a first substrate(2) having a first solder bump(1). A laminate of the first substrate and the second substrate, in which the first solder bump and the second solder bump are temporarily fixed, is arranged in a furnace. The furnace in which the laminate is arranged has a decompression atmosphere inside thereof. A carboxylic acid gas is introduced into the furnace of the decompression atmosphere. Temperature inside the furnace rises to a temperature range over the melting temperature of the first and the second solder bumps and the first solder bump and the second solder bump are welded.
摘要翻译：目的：提供一种用于制造半导体器件的方法，以防止通过焊接凸块熔化之后由焊料凸块产生的空隙。构成：具有第二焊料凸点（3）的第二基板（4）层叠在具有第一焊料凸块（1）的第一基板（2）上。将第一焊料凸块和第二焊料凸块暂时固定的第一基板和第二基板的层叠体配置在炉中。配置有层叠体的炉子在其内部具有减压气氛。将羧酸气体引入减压气氛的炉中。炉内的温度上升到超过第一和第二焊料凸块的熔化温度的温度范围，并且焊接第一焊料凸块和第二焊料凸块。

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