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    • 5. 发明公开
    • APPARATUS AND METHOD FOR TREATING A WAFER
    • 用于处理波形的装置和方法
    • KR20070080523A
    • 2007-08-10
    • KR20060011889
    • 2006-02-07
    • SAMSUNG ELECTRONICS CO LTD
    • LEE KWAN HEUMLEE SANG HO
    • H01L21/66H01L21/677
    • H01L21/67028B08B7/0042H01L21/6704H01L21/68714H01L22/24
    • A wafer processing apparatus and a method are provided to remove completely particles from a wafer loading portion of a wafer stage by using a laser module capable of generating shock waves against the particles. A wafer processing apparatus includes a wafer stage and a laser module. The wafer stage includes a wafer loading portion capable of loading stably a wafer in a predetermined process. The laser module(420) removes particles attached onto the wafer loading portion by generating shock waves against the particles using a laser irradiation. The wafer processing apparatus further includes a measurement unit for measuring the flatness of the wafer loading portion, a transfer unit for transferring the wafer stage, and a control unit for controlling the transfer unit on the basis of the measurement value received from the measurement unit.
    • 提供了一种晶片处理装置和方法,其通过使用能够产生针对颗粒的冲击波的激光模块来从晶圆台的晶片装载部分中完全除去颗粒。 晶片处理装置包括晶片台和激光模块。 晶片台包括能够以预定工艺稳定地加载晶片的晶片装载部分。 激光模块(420)通过使用激光照射产生对颗粒的冲击波来去除附着在晶片装载部分上的颗粒。 晶片处理装置还包括用于测量晶片装载部分的平坦度的测量单元,用于传送晶片台的传送单元和用于基于从测量单元接收的测量值来控制传送单元的控制单元。