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3. 发明授权

KR1019960008549B1 이중 포토레지스트 공정에 의한 구조적 정합의 제조방법 失效
标题翻译：双光阻制程结构匹配的制造方法
公开(公告)号：KR1019960008549B1
公开(公告)日：1996-06-28
申请号：KR1019880006511
申请日：1988-05-31
申请人： 현대반도체 주식회사
发明人： 박근원
IPC分类号： H01L21/28
摘要： patterning a first photo resist(PR_A) pattern by a masking process after coating PR_A on a wafer where material A and B are coexist; formating a double photo resist by patterning a self aligned second photo resist(PR_B) pattern and a PR_B removed pattern on the PR_A by etching process and masking process after applying identical PR_B on the wafer; and formating a certain wiring by removing PR_A and PR_B simultaneously with a etching process using a mask, thereby improving the manufacturing process.
摘要翻译：在材料A和B共存的晶片上涂覆PR_A之后，通过掩模工艺对第一光致抗蚀剂（PR_A）图案进行图案化; 通过在晶片上施加相同的PR_B之后通过蚀刻工艺和掩模工艺在PR_A上图案化自对准的第二光致抗蚀剂（PR_B）图案和PR_B去除图案来形成双光刻胶; 并通过使用掩模的蚀刻工艺同时移除PR_A和PR_B来形成某种布线，从而改进制造工艺。

7. 发明授权

KR100129192B1 반도체 소자의 패턴 형성방법 失效
标题翻译：半导体器件的绘图方法
公开(公告)号：KR100129192B1
公开(公告)日：1998-04-07
申请号：KR1019890003219
申请日：1989-03-15
申请人： 현대반도체 주식회사
发明人： 박근원 , 김승운
IPC分类号： H01L21/302
摘要： A forming method of a sloped pattern of semiconductor devices is disclosed. The method comprises the steps of: spin-coating a photoresist(51); soft-baking the coated photoresist(51); exposing the photoresist through a reticle(52); hard-baking the resultant structure; and applying an exposing energy to the surface of the photoresist(51) in the vertical direction to the photoresist, wherein the exposing energy is more than 30 percents that of the critical energy of the photoresist profile, thereby forming a negatively sloped pattern.
摘要翻译：公开了一种半导体器件的倾斜图案的形成方法。该方法包括以下步骤：旋涂光致抗蚀剂（51）; 软化涂覆的光致抗蚀剂（51）; 将光致抗蚀剂曝光通过掩模版（52）; 硬烘烤结果; 以及在与光致抗蚀剂垂直的方向上向光致抗蚀剂（51）的表面施加暴露能量，其中曝光能量大于光致抗蚀剂轮廓的临界能量的30％，从而形成负斜率图案。

9. 发明授权

KR1019970007433B1 이미지 리버스 포토레지스트를 이용한 이중포토처리방법 失效
标题翻译：使用图像反光镜的双照片处理过程
公开(公告)号：KR1019970007433B1
公开(公告)日：1997-05-08
申请号：KR1019880014041
申请日：1988-10-27
申请人： 현대반도체 주식회사
发明人： 박근원 , 김홍석 , 승성표
IPC分类号： G03F7/00
摘要： A doublephoto treatment method using image reverse photoresist comprising the step forming image reverse photoresist on wafer; the step patterning said photoresist by masking & exposing it; the step forming photoresist on said image reverse photoresist; and the step patterning said photoresist by masking & exposing it is disclosed. Thereby, processes become simple and costs become reduced because prior high temperature heat treatment and ultra violet curing are unnecessary.
摘要翻译：使用图像反向光致抗蚀剂的双光焦度处理方法，其包括在晶片上形成图像反向光刻胶的步骤; 通过掩蔽和曝光来对所述光致抗蚀剂进行图案化; 在所述图像反向光刻胶上形成步骤形成光致抗蚀剂; 并且公开了通过掩蔽和曝光来对所述光致抗蚀剂进行图案化的步骤。因此，由于不需要先前的高温热处理和紫外线固化，工艺变得简单并且成本降低。

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